C23C18/1837

Semiconductor package with plateable encapsulant and a method for manufacturing the same

A package which comprises a first encapsulant configured so that electrically conductive material is plateable thereon, and a second encapsulant configured so that electrically conductive material is not plateable thereon.

JOINING STRUCTURE AND MANUFACTURING METHOD FOR SAME
20240165921 · 2024-05-23 ·

Provided is a joining structure in which two joined bodies composed of metal are firmly joined together with plated metal, and a method for manufacturing the joining structure. The joining structure comprises a first joined body composed of a first metal, a second joined body composed of a second metal, and a plating portion, disposed between the first joined body and the second joined body, formed of a plating metal, and joining the first joined body and the second joined body. In the plating portion a joining interface of plating metal is formed at around equidistance from the respective joined surfaces of the first joined body and the second joined body, and the plating portion comprises, in the vicinity of the joining interface, has a recrystallization region where the plating metal has recrystallized, or a first diffusion region where the plating metal has diffused.

Painting pre-treatment processes with low environments impact, as an alternative to conventional phosphating treatments
10378110 · 2019-08-13 · ·

Disclosed is a process alternative to the zinc phosphating and phosphodegreasing processes, which comprises: >Zinc phosphating replacement a. a step of alkaline degreasing of the article to be phosphated; b. a first wash with tap water; c. a second wash with demineralized water; d. a conversion treatment in a bath containing zirconium salts, phosphates, fluoride complexes, ammonia, at least one corrosion inhibitor, at least one process accelerator, at least one sequestering agent, a reaction sludge thickening system, and optionally, titanium and vanadium compounds; e. a final wash before treatment of the article in the oven. >Phosphodegreasing process replacement a. a conversion treatment in a bath containing zirconium salts, phosphates, fluoride complexes, ammonia, at least one corrosion inhibitor, at least one process accelerator, at least one sequestering agent, at least one surfactant, a reaction sludge thickening system, and optionally, titanium and vanadium compounds; b. a wash with tap water; c. a wash with demineralized water before treatment of the article in the oven.

SURFACE-TREATED MATERIAL, METHOD FOR PRODUCING THE SURFACE-TREATED MATERIAL, AND COMPONENT FORMED BY USING THE SURFACE-TREATED MATERIAL

A surface-treated material of the present disclosure has a conductive substrate, and a surface treatment film which includes at least one layer of metal layers and is formed on the conductive substrate. The surface treatment film is a plating film. The surface treatment film is formed on a whole surface or a part of the conductive substrate through a zinc-containing layer that contains zinc as a main component and has a thickness of 50 nm or less, or is formed on the conductive substrate without through the zinc-containing layer. The surface-treated material has a ratio of a contact area to a test area of 85% or more as measured according to a tape test method defined in JIS H 8504: 1999.

WIRE AND METHOD FOR MANUFACTURING WIRE

Provided is a wire having a core wire and a coating layer positioned on the outer periphery of the core wire, wherein the core wire consists essentially of aluminum or an aluminum alloy; the coating layer consists essentially of nickel or a nickel alloy; on the core wire, an area ratio of portions not being coated with the coating layer is lower than 0.01%; the wire further has a first element; and the first element is at least one selected from the group consisting of iron, magnesium, silicon, copper, zinc, nickel, manganese, silver, chromium and zirconium.

Method for producing core-shell catalyst

The disclosure is to provide a method for producing a core-shell catalyst that is able to increase the power generation performance of a membrane electrode assembly. A dispersion is prepared, in which a palladium-containing particle support, in which palladium-containing particles are supported on an electroconductive support, is dispersed in water; hydrogen gas is bubbled into the dispersion; the palladium-containing particles are acid treated after the bubbling; copper is deposited on the surface of the palladium-containing particles by applying a potential that is nobler than the oxidation reduction potential of copper to the palladium-containing particles in a copper ion-containing electrolyte after the acid treatment; and then a shell is formed by substituting the copper deposited on the surface of the palladium-containing particles with platinum by bringing the copper deposited on the surface of the palladium-containing particles into contact with a platinum ion-containing solution.

Catalysts for electroless metallization containing five-membered heterocyclic nitrogen compounds

Catalysts include five-membered nitrogen containing heterocyclic compounds as ligands for metal ions which have catalytic activity. The catalysts are used to electrolessly plate metal on metal clad and un-clad substrates.

Easy clean coating applied on stainless steel metallic surfaces used in the manufacture of household appliances

The present invention related to a silicon based coating suitable for being applied onto metallic surfaces of a household appliance. The coating of the present invention protects the metallic surfaces of the household appliance against the yellowing or changes in color, through temperatures, among other factors, and eases the cleaning of the same.

METHOD FOR PRODUCING ALUMINUM ALLOY RAW MATERIAL, METHOD FOR PRODUCING ALUMINUM ALLOY INGOT, METHOD FOR PRODUCING ALUMINUM ALLOY PLATE, METHOD FOR PRODUCING ALUMINUM ALLOY SUBSTRATE FOR PLATING, METHOD FOR PRODUCING ALUMINUM ALLOY SUBSTRATE FOR MAGNETIC DISK, METHOD FOR PRODUCING MAGNETIC DISK, AND MAGNETIC DISK

An example method for producing an aluminum alloy raw material, wherein in a separation step of reusing, as a recycled material, at least one of an intermediate material and a finished product each comprising an aluminum alloy disk and an underlayer, for at least part of an aluminum alloy material and heating the aluminum alloy material comprising the recycled material to separate the aluminum alloy disk and the underlayer, and the aluminum alloy material comprising the recycled material is heated and held at 480 C. or higher and 590 C. or lower for more than 1 hour.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes: forming a first major electrode on a first major surface of a semiconductor substrate; forming a second major electrode on a second major surface of the semiconductor substrate opposite to the first major surface; carrying out a surface activating treatment to activate surfaces of the first and second major electrodes; carrying out a surface cleaning treatment to clean up the surfaces of the first and second major electrodes; and after the surface activating treatment and the surface cleaning treatment, simultaneously forming first and second Ni films on the first and second major electrodes respectively by a wet film forming method, wherein a ratio of crystalline Ni contained in the first and second Ni films is 2% or more.