Patent classifications
C04B2235/3255
MnZn-FERRITE AND ITS PRODUCTION METHOD
A method for producing MnZn-ferrite comprising Fe, Mn and Zn as main components, and at least Co, Si and Ca as sub-components, the main components in the MnZn-ferrite comprising 53-56% by mol (as Fe.sub.2O.sub.3) of Fe, and 3-9% by mol (as ZnO) of Zn, the balance being Mn as MnO, comprising the step of sintering a green body to obtain MnZn-ferrite; the sintering comprising a temperature-elevating step, a high-temperature-keeping step, and a cooling step; the high-temperature-keeping step being conducted at a keeping temperature of higher than 1050° C. and lower than 1150° C. in an atmosphere having an oxygen concentration of 0.4-2% by volume; the oxygen concentration being in a range of 0.001-0.2% by volume during cooling from 900° C. to 400° C. in the cooling step; and the cooling speed between (Tc+70)° C. and 100° C. being 50° C./hour or more, wherein Tc represents a Curie temperature (° C.) calculated from % by mass of Fe.sub.2O.sub.3 and ZnO.
Radiofrequency component including a high thermal conductivity composite dielectric material
Disclosed herein are embodiments of materials having high thermal conductivity along with a high dielectric constants. In some embodiments, a two phase composite ceramic material can be formed having a contiguous aluminum oxide phase with a secondary phase embedded within the continuous phase. Example secondary phases include calcium titanate, strontium titanate, or titanium dioxide.
HIGH Q MODIFIED BARIUM MAGNESIUM TANTALATE FOR HIGH FREQUENCY APPLICATIONS
Disclosed are embodiments of a barium magnesium tantalate including additional components to increase the Q value of the material. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added into the barium magnesium tantalate to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.
NIOBIUM OXIDE SINTERED COMPACT, SPUTTERING TARGET FORMED FROM SAID SINTERED COMPACT, AND METHOD OF PRODUCING NIOBIUM OXIDE SINTERED COMPACT
The present invention provides a niobium oxide sintered compact having a composition of NbO.sub.x (2<x<2.5), and specifically provides a niobium oxide sintered compact which can be applied to a sputtering target for forming a high-quality resistance change layer for use in ReRAM. In particular, the present invention aims to provide a high-density niobium oxide sintered compact suitable for stabilizing the sputtering process.
PIEZOELECTRIC MATERIAL, METHOD OF MANUFACTURING THE SAME, PIEZOELECTRIC ELEMENT, AND PIEZOELECTRIC ELEMENT APPLICATION DEVICE
A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is α and α×Tc3+(1−α)×Tc1 is Tc4, |Tc4−Tc2| is 50° C. or lower.
Article and method of making thereof
An article including a substrate and a plurality of coatings disposed on the substrate is presented. The plurality of coatings includes a thermal barrier coating disposed on the substrate; and a protective coating including a calcium-magnesium-aluminum-silicon-oxide (CMAS)-reactive material disposed on the thermal barrier coating. The CMAS-reactive material has an orthorhombic weberite crystal structure. The CMAS-reactive material is present in the plurality of coatings in an effective amount to react with a CMAS composition at an operating temperature of the thermal barrier coating, thereby forming a reaction product having one or both of melting temperature and viscosity greater than that of the CMAS composition. A method of making the article and a related turbine engine component are also presented.
Piezoelectric ceramic, method of manufacturing same, and piezoelectric ceramic speaker using same
A piezoelectric ceramic has a primary phase constituted by ceramic grains of perovskite crystal structure containing Pb, Nb, Zn, Ti, and Zr, and a secondary phase constituted by ZnO grains present sporadically in the primary phase. The piezoelectric ceramic of high kr and high specific dielectric constant can be sintered at low temperature and exhibit minimal characteristics variations.
DUAL-PHASE HIGH THERMAL CONDUCTIVITY COMPOSITE DIELECTRIC MATERIALS
Disclosed herein are embodiments of materials having high thermal conductivity along with a high dielectric constants. In some embodiments, a two phase composite ceramic material can be formed having a contiguous aluminum oxide phase with a secondary phase embedded within the continuous phase. Example secondary phases include calcium titanate, strontium titanate, or titanium dioxide.
Piezoelectric material, piezoelectric element, and electronic apparatus
The present invention provides a piezoelectric material not containing lead and potassium, having a high relative density, a high Curie temperature, and a high mechanical quality factor, and exhibiting good piezoelectricity. The piezoelectric material contains 0.04 percent by mole or more and 2.00 percent by mole or less of Cu relative to 1 mol of metal oxide represented by General formula (1) below.
((Na.sub.1-zLi.sub.z).sub.xBa.sub.1-y)(Nb.sub.yTi.sub.1-y)O.sub.3 (in Formula, 0.70≦x≦0.99, 0.75≦y≦0.99, and 0<z<0.15, and x<y) General formula (1)
DIELECTRIC FILM AND ELECTRONIC COMPONENT
A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu—Kα X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3° to 2.0°.