Both single phase lead-free cubic pyrochlore bismuth zinc niobate (BZN)-based dielectric materials with a chemical composition of Bi.sub.1.5Zn.sub.(0.5+y)Nb.sub.(1.5−x)Ta.sub.(x)O.sub.(6.5+y), with 0≦x<0.23 and 0≦y<0.9 and films with these average compositions with Bi.sub.2O.sub.3 particles in an amorphous matrix and a process of manufacture thereof. The crystalline BZNT-based dielectric material has a relative permittivity of at least 120, a maximum applied electric field of at least 4.0 MV/cm at 10 kHz, a maximum energy storage at 25° C. and 10 kHz of at least 50 J/cm.sup.3 and a maximum energy storage at 200° C. and 10 kHz of at least 22 J/cm.sup.3. The process is a wet chemical process that produces thin films of Bi.sub.1.5Zn.sub.(0.5+y)Nb.sub.(1.5−x)Ta.sub.(x)O.sub.(6.5+y) without the use of 2-methoxyethanol and pyridine.

A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC.sub.2O.sub.5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.000<x≦0.281, 0.625≦y<1.000, and 0.000<z≦0.375.

A method of growing a FE material thin film using physical vapor deposition by pulsed laser deposition or RF sputtering is disclosed. The method involves creating a target to be used for the pulsed laser deposition in order to create a KBNNO thin film. The resultant KBNNO thin film is able to be used in photovoltaic cells.

The present disclosure relates to a method for obtaining lead-free piezoelectric materials, including: Step S100, adjusting the T/O phase boundary of a first lead-free piezoelectric material: for the first lead-free piezoelectric material, adjusting the T/O phase boundary between the tetragonal phase T and the orthorhombic phase O to be near the room temperature by doping; Step S200, further adjusting the C/T phase boundary and the O/R phase boundary: further adjusting the C/T phase boundary between the cubic paraelectric phase C and the tetragonal phase T, and the O/R phase boundary between the orthorhombic phase O and the rhombohedral phase R by doping, so as to enable the C/T phase boundary and the O/R phase boundary to approach the T/O phase boundary; and Step S300, obtaining second lead-free piezoelectric materials: obtaining multiple second lead-free piezoelectric materials with different piezoelectric constants d.sub.33 and different Curie temperatures T.sub.C in the process.

To provide a dense beta-alumina-based sintered compact having a high ionic conductivity as a solid electrolyte by firing at a low temperature to suppress the volatilization of Na.sub.2O and its production method. By adding RNbO.sub.3 which is a material having a low melting point to a beta-alumina powder, followed by firing, it is possible to obtain a beta-alumina-based sintered compact having a low firing temperature and containing, as the main component, dense β″ alumina crystals which are free from anomalous grain growth during the firing process.

A semiconductor ceramic composition represented by formula (1),

(Ba.sub.vBi.sub.xA.sub.yRE.sub.w).sub.m(Ti.sub.uTM.sub.z)O.sub.3  (1),

wherein, A represents at least one element selected from Na and K, RE represents at least one element selected from Y, La, Ce, Pr, Nd, Sm, Gd, Dy and Er;

0.750y≦x≦1.50y  (2),

0.007≦y≦0.125  (3),

0≦(w+z)≦0.010  (4),

v+x+y+w=1  (5),

u+z=1  (6),

0.950≦m≦1.050  (7),

0.001 to 0.055 mol of Ca is contained, and 0.0005 to 0.005 mol of at least one selected from Mg, Al, Fe, Co, Cu and Zn is contained.

A semiconductor ceramic composition which is a BaTiO.sub.3 based semiconductor ceramic composition, wherein, part of Ba is replaced by at least A (at least one alkali metal element selected from Na and K), Bi and RE (at least one element selected from rare earth elements including Y), and part of Ti is replaced by at least TM (at least one element selected from the group including of V, Nb and Ta), the relationships of 0.7≦{(the content of Bi)/(the content of A)}≦1.43, 0.017≦{(the content of Bi)+(the content of A)}≦0.25, and 0<{(the content of RE)+(the content of TM)}≦0.01 are satisfied when the total content of Ti and TM is set as 1 mol, the grain sizes have a maximum peak in a grain size distribution in a range of 1.1 μm to 4.0 μm or less, and the distribution frequency of the peak is 20% or more.

Disclosed are embodiments of making a barium magnesium tantalate. The method can include providing barium magnesium tantalate and incorporating one of Ba.sub.2MgWO.sub.6, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.8LiTa.sub.5WO.sub.24, Ba.sub.2MgWO.sub.6, Ba.sub.3LaTa.sub.3O.sub.12, Ba.sub.8LiTa.sub.5WO.sub.24, BaLaLiWO.sub.6, Ba.sub.4Ta.sub.2WO.sub.12, Ba.sub.2La.sub.2MgW.sub.2O.sub.12, BaLaLiWO.sub.6, Sr.sub.3LaTa.sub.3O.sub.12, and SrLaTaO.sub.12 into the barium magnesium tantalate to form a solid solution having a high Q value.

A piezoelectric composition including copper and a complex oxide having a perovskite structure represented by a general formula ABO.sub.3, in which an A site element in the ABO.sub.3 is potassium or potassium and sodium, a B site element in the ABO.sub.3 is niobium or niobium and tantalum, the copper is included in n mol % in terms of a copper element with respect to 1 mol of the complex oxide, and n satisfies 0.100≤n≤1.000.

Disclosed are embodiments of synthetic garnet materials for use in radiofrequency applications. In some embodiments, increased amounts of bismuth can be added into specific sites in the crystal structure of the synthetic garnet in order to boost certain properties, such as the dielectric constant and magnetization. Accordingly, embodiments of the disclosed materials can be used in high frequency applications, such as in base station antennas.