A target for sputtering, use of the target and method of manufacture of the target is provided. The target has a single piece target material for sputter deposition, with at least 1 mm thickness of material for sputtering, having a lamellar structure and comprising a metal oxide with at least 50 wt. % or more of tungsten oxide. The atomic ratio of oxygen over tungsten results in a compound with oxygen deficiency with respect to the stoichiometric tungsten oxide. The method includes spraying metallic tungsten and/or tungsten oxide powder in amounts so as to provide a layer of material for sputtering being at least 1 mm thick and comprising non-stoichiometric tungsten oxide.

Disclosed herein are embodiments of low temperature co-fireable barium tungstate materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the material can include flux, such as bismuth vanadate, to reduce co-firing temperatures.

A coated substrate is provided that can include a substrate defining a surface, and an abradable coating on the surface of the substrate. The abradable coating can comprise La.sub.2-xA.sub.xMo.sub.2-y-yW.sub.yB.sub.yO.sub.9- forming a crystalline structure, where A comprises Li, Na, K, Rb, Cs, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, Be, Mg, Ca, Sr, Ba, Cu, Bi, Cd, Zn, Ag, Au, Pt, Ir, Rh, Ru, Pd, or combinations thereof; 0<xabout 0.2 (e.g., about 0.1xabout 0.15); 0yabout 1.5 (e.g., about 0.01yabout 1.5); B comprises Ta, Nb, V, Fe, Cr, Mn, Co, Ni, Sn, Ga, Al, Re, In, S, or combinations thereof; 0yabout 0.2, wherein the sum of y and y is about 0.01 to about 1.6; and 0about 0.2.

Disclosed herein are embodiments of low temperature co-fireable barium tungstate materials which can be used in combination with high dielectric materials, such as nickel zinc ferrite, to form composite structures, in particular for isolators and circulators for radiofrequency components. Embodiments of the material can include flux, such as bismuth vanadate, to reduce co-firing temperatures.

Disclosed are embodiments of a barium magnesium tantalate including additional components to increase the Q value of the material. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added into the barium magnesium tantalate to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.6 g/cm.sup.3 and equal to or lower than 7.5 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc in the oxide sintered body is higher than 0.5 atomic % and equal to or lower than 5.0 atomic %, a content rate of zinc to the total of indium, tungsten and zinc in the oxide sintered body is equal to or higher than 1.2 atomic % and equal to or lower than 19 atomic %, and an atomic ratio of zinc to tungsten is higher than 1.0 and lower than 60. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device (10).

An aqueous solution composition contains more than or equal to 10 mass % and less than or equal to 30 mass % of tungstate ions relative to 1 kg of water, more than or equal to 0.05 mass % and less than or equal to 5 mass % of transition metal ions relative to 1 kg of water, and a remainder of counter anions and water. The transition metal ions include cobalt ions. The counter anions include organic acid ions. The organic acid ions are multidentate ligands.

A method for molding a ceramic material includes: mixing a ceramic powder, a resin, a curing agent and a solvent to obtain a raw material slurry for a ceramic material; injecting the raw material slurry into an elastic container; curing the resin in the raw material slurry injected into the elastic container to form a molded body having a desired shape; and demolding the molded body from the elastic container.

Disclosed are embodiments of a barium magnesium tantalate including additional components to increase the Q value of the material. In some embodiments, complex tungsten oxides and/or hexagonal perovskite crystal structures can be added into the barium magnesium tantalate to provide for advantageous properties. In some embodiments, no tin is used in the formation of the material.

There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm.sup.3 and equal to or lower than 7.1 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.