A target for sputtering, use of the target and method of manufacture of the target is provided. The target has a single piece target material for sputter deposition, with at least 1 mm thickness of material for sputtering, having a lamellar structure and comprising a metal oxide with at least 50 wt. % or more of tungsten oxide. The atomic ratio of oxygen over tungsten results in a compound with oxygen deficiency with respect to the stoichiometric tungsten oxide. The method includes spraying metallic tungsten and/or tungsten oxide powder in amounts so as to provide a layer of material for sputtering being at least 1 mm thick and comprising non-stoichiometric tungsten oxide.

The present invention relates to a composite of a cobalt-based perovskite material with a negative thermal expansion material, and a preparation method of the same, and a solid oxide fuel cell (SOFC) comprising the same, and belongs to the technical field of fuel cells. In the present invention, a negative thermal expansion material is introduced into a cobalt-based perovskite oxide to successfully prepare an SOFC cathode material with excellent electrochemical performance and low thermal expansivity. The composite electrode achieves prominent mechanical tolerance in SOFC, which can moderate a volume change during the whole calcination process and enable a smooth transition to a high-temperature stage. The composite electrode has a thermal expansion coefficient (TEC) only of 12.9?10.sup.?6 K.sup.?1, which is perfectly matched with that of an SDC electrolyte. In addition, the composite shows excellent oxygen reduction reaction (ORR) activity, high TEC, and extremely-excellent anti-CO.sub.2 poisoning performance.

A proton conducting ceramic membrane comprising a conducting layer, wherein said conducting layer comprises a mixture of a rare-earth tungstate as herein defined and a mixed metal oxide as herein defined. The invention also relates to a reactor comprising said membrane and the use of said membrane in a dehydrogenation process.

There is provided an oxide sintered body including indium, tungsten, and at least one of zinc and tin, wherein the oxide sintered body includes, as a crystal phase, a complex oxide crystal phase including tungsten and at least one of zinc and tin. There is also provided a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the oxide sintered body as a target.

A multilayer ceramic capacitor that includes a ceramic laminated body having dielectric layers and internal electrodes at the interfaces between the dielectric layers, and external electrodes on the outer surface of the ceramic laminated body. The dielectric layers contain, as their main constituent, a perovskite-type compound including Ba, Ti, Zr, and M. M is at least one element of Ta, Nb, V, and W. The dielectric layers further contain Mn and Si as additive constituents. With respect to the total amount of Ti, Zr, and M, 40 mol %<Zr90 mol %, M is 1 mol %M10 mol %. When the total amount of Ti, Zr, and M is regarded as 100 parts by mol, 1 part by molMn10 parts by mol, 1 part by molSi5 parts by mol, and 0.5Mn/M3.0.

A metal oxide macroscopic fiber and a preparation method thereof, the method including: adding, as a spinning dope, an anionic metal oxide aqueous colloidal solution into wet spinning equipment, extruding the spinning dope from the spinning equipment into a thread, injecting the extruded thread into a coagulating bath containing a flocculating agent to obtain as-spun fiber, and repeatedly washing the resulted as-spun fiber with deionized water and drying same, thereby obtaining a metal oxide fiber. Said method makes the process simple and controllable, being adaptable to production on a large scale. The prepared metal oxide fiber having special physical and chemical properties is widely applicable in terms of intelligent spinning, biomedicine, energy recycling and conversion, and the field of microelectronic devices and the like.

Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing, forms a dielectric material comprising a barium-strontium-titanium-tungsten-silicon oxide.

An abrasive article includes a polycrystalline material comprising abrasive grains and a filler material selected from the group of materials consisting of tungstate, molybdate, vanadate, and a combination thereof. Earth-boring tools comprise a bit body and a cutting element carried by the bit body. The cutting element comprises a polycrystalline material comprising abrasive grains, a catalyst material, and a filler material selected from the group of materials consisting of tungstate, molybdate, vanadate, and a combination thereof.

Electronic devices are produced from dielectric compositions comprising a mixture of precursor materials that, upon firing forms a dielectric material comprising a barium-titanium-tungsten-silicon oxide.

A method of forming a metal deposit on an ultra-hard material. In an embodiment, the method includes providing a plurality of ultra-hard particles, mixing the ultra-hard particles in a solution with a metal salt, drying the solution to create a mixture of metal salt particles adhered to surfaces of the ultra-hard particles, heating the mixture to convert the metal salt particles into metal deposits on the surfaces of the ultra-hard particles, and HTHP sintering the mixture of ultra-hard particles with the metal deposits to form a polycrystalline ultra-hard material.