Patent classifications
C04B2235/326
Oxide sintered body and method for manufacturing the same, sputtering target, and semiconductor device
There is provided an oxide sintered body including indium, tungsten and zinc, wherein the oxide sintered body includes a bixbite type crystal phase as a main component and has an apparent density of higher than 6.5 g/cm.sup.3 and equal to or lower than 7.1 g/cm.sup.3, a content rate of tungsten to a total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %, and a content rate of zinc to the total of indium, tungsten and zinc is higher than 1.2 atomic % and lower than 30 atomic %. There are also provided a sputtering target including this oxide sintered body, and a semiconductor device including an oxide semiconductor film formed by a sputtering method by using the sputtering target.
OXIDE SINTERED MATERIAL, METHOD OF PRODUCING OXIDE SINTERED MATERIAL, SPUTTERING TARGET, AND METHOD OF PRODUCING SEMICONDUCTOR DEVICE
There is provided an oxide sintered material containing indium, tungsten, and zinc, the oxide sintered material including: a first crystal phase that is a main component of the oxide sintered material and includes a bixbyite type crystal phase; and a second crystal phase having a content of the zinc higher than a content of the zinc in the first crystal phase, the second crystal phase including particles having an average major axis size of not less than 3 m and not more than 50 m and having an average aspect ratio of not less than 4 and not more than 50.
Positive electrode for lithium ion battery
A positive electrode composition for a rechargeable battery, the composition comprising a first and a second powderous lithium metal oxide, the first lithium metal oxide comprising either one or more of Ni, Mn and Co, the second lithium metal oxide powder having either: the formula Li.sub.xWM.sub.yO.sub.z, M being a metal having a valence state of +2 or +3, with 0<y1, 3x4, 5z6, whereby x=(2*z)[y*(valence state of M)](valence state of W).
Dielectric material and electronic component
A dielectric material having a rutile crystalline structure includes Ti as a major constituent metal element, and, as metal elements other than Ti, a metal element M1 which includes at least one selected from among Ni, Co, and elements belonging to Group 2 according to a periodic table, and a metal element M2 which includes at least one selected from among elements belonging to Group 5 and Group 6 in the periodic table, and, on a basis of a total amount of Ti, the metal element M1, and the metal element M2, a molar ratio x of the metal element M1 is in a range of 0.005 to 0.025 and a molar ratio y of the metal element M2 is in a range of 0.010 to 0.050.
ABRASIVE ARTICLES AND EARTH-BORING TOOLS
An abrasive article includes a polycrystalline material comprising abrasive grains and a filler material selected from the group of materials consisting of tungstate, molybdate, vanadate, and a combination thereof. Earth-boring tools comprise a bit body and a cutting element carried by the bit body. The cutting element comprises a polycrystalline material comprising abrasive grains, a catalyst material, and a filler material selected from the group of materials consisting of tungstate, molybdate, vanadate, and a combination thereof
Mechanically stable hollow cylindrical shaped catalyst bodies for gas phase oxidation of an alkene to an unsaturated aldehyde and/or an unsaturated carboxylic acid
A hollow cylindrical shaped catalyst body for gas phase oxidation of an alkene to an ,-unsaturated aldehyde and/or an ,-unsaturated carboxylic acid comprises a compacted multimetal oxide having an external diameter ED, an internal diameter ID and a height H, wherein ED is in the range from 3.5 to 4.5 mm; the ratio q=ID/ED is in the range from 0.4 to 0.55; and the ratio p=H/ED is in the range from 0.5 to 1. The shaped catalyst body is mechanically stable and catalyzes the partial oxidation of an alkene to the products of value with high selectivity. It provides a sufficiently high catalyst mass density of the catalyst bed and good long-term stability with acceptable pressure drop.
LANTHANUM MOLYBDATE ABRADABLE COATINGS, THEIR METHODS OF FORMATION AND USE
A coated substrate is provided that can include a substrate defining a surface, and an abradable coating on the surface of the substrate. The abradable coating can comprise La.sub.2-xA.sub.xMo.sub.2-y-y W.sub.yB.sub.yO.sub.9- forming a crystalline structure, where A comprises Li, Na, K, Rb, Cs, Sc, Y, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Th, Be, Mg, Ca, Sr, Ba, Cu, Bi, Cd, Zn, Ag, Au, Pt, Ir, Rh, Ru, Pd, or combinations thereof; 0<xabout 0.2 (e.g., about 0.1xabout 0.15); 0yabout 1.5 (e.g., about 0.01yabout 1.5); B comprises Ta, Nb, V, Fe, Cr, Mn, Co, Ni, Sn, Ga, Al, Re, In, S, or combinations thereof; 0yabout 0.2, wherein the sum of y and y is about 0.01 to about 1.6; and 0about 0.2.
Bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and preparation method and application thereof
The present invention relates to a bismuth tungstate/bismuth sulfide/molybdenum disulfide heterojunction ternary composite material and a preparation method and application thereof. The composite material is composed of bismuth tungstate, bismuth sulfide and molybdenum disulfide in an ordered layered way, Bi.sub.2WO.sub.6 is an orthorhombic system, Bi.sub.2S.sub.3 is a p-type semiconductor located on a (130) crystal face, MoS.sub.2 is a layered transition metal sulfide located on a (002) crystal face, the whole composite material is of a spherical structure with an unsmooth surface, and a layer of nanosheets uniformly grow on an outer layer. The average particle size of composite materials is in the range of 2.4-2.6 m. The spherical Bi.sub.2WO.sub.6/Bi.sub.2S.sub.3/MoS.sub.2 heterojunction ternary composite material prepared in the present invention has good adsorption of Cr(VI) and high catalytic reduction ability under visible light.
MULTILAYER CERAMIC CAPACITOR
A multilayer ceramic capacitor that includes a ceramic laminated body having dielectric layers and internal electrodes at the interfaces between the dielectric layers, and external electrodes on the outer surface of the ceramic laminated body. The dielectric layers contain, as their main constituent, a perovskite-type compound including Ba, Ti, Zr, and M. M is at least one element of Ta, Nb, V, and W. The dielectric layers further contain Mn and Si as additive constituents. With respect to the total amount of Ti, Zr, and M, 40 mol %<Zr90 mol %, M is 1 mol %M10 mol %. When the total amount of Ti, Zr, and M is regarded as 100 parts by mol, 1 part by molMn10 parts by mol, 1 part by molSi5 parts by mol, and 0.5Mn/M3.0.
DIELECTRIC MATERIAL AND ELECTRONIC COMPONENT
A dielectric material having a rutile crystalline structure includes Ti as a major constituent metal element, and, as metal elements other than Ti, a metal element M1 which includes at least one selected from among Ni, Co, and elements belonging to Group 2 according to a periodic table, and a metal element M2 which includes at least one selected from among elements belonging to Group 5 and Group 6 in the periodic table, and, on a basis of a total amount of Ti, the metal element M1, and the metal element M2, a molar ratio x of the metal element M1 is in a range of 0.005 to 0.025 and a molar ratio y of the metal element M2 is in a range of 0.010 to 0.050.