There is provided a method for the fabrication of porous SiC ceramic. The method comprises oxidizing particles of SiC ceramic thereby forming amorphous silica on the surface of the particles. The oxidized SiC particles are then mixed with an additive. Alternatively, layer(s) of the additive is (are) deposited on their surface by sol-gel technique. The oxidized SiC particles mixed or coated with the additive are then mixed with at least one pore-former. Alternatively, the oxidized SiC particles mixed or coated with the additive are coated with layer(s) of a polymer or pore-former by in-situ polymerization. In embodiments where the oxidized SiC particles are mixed with an additive and a pore-former or polymer, a further additive may be used. In each of these embodiments, the resulting product is then compacted into a green body which is heated and sintered to yield the porous SiC ceramic material. There is also provided a porous SiC ceramic fabricated by the method according to the invention.

A silicon carbide member for a plasma processing apparatus is obtained by mixing an -silicon carbide powder having an average particle size of 0.3 to 3 m, with an amount of metal impurities in the -silicon carbide powder reduced to 20 ppm or less, and a sintering aid comprising B.sub.4C in amount of 0.5 to 5 weight parts or Al.sub.2O.sub.3 and Y.sub.2O.sub.3 in total amount of 3 to 15 weight parts; sintering a mixture of the -silicon carbide powder and the sintering aid in an argon atmosphere furnace or a high-frequency dielectric heating furnace; and then processing the resulting sintered body. The resulting silicon carbide member for a plasma processing apparatus is low cost and durable.

Disclosed is a method for providing a crystalline ceramic material. In an example, the method includes providing a silicon-containing preceramic polymer material that can be thermally converted to one or more crystalline polymorphs. The silicon-containing preceramic polymer material includes dispersed therein an effective amount of dopant particles. The silicon-containing preceramic polymer material is then thermally converted to the silicon-containing ceramic material. The effective amount of dopant particles enhance the formation of at least one of the one or more crystalline polymorphs, relative to the silicon-containing preceramic polymer without the dopant particles, with respect to at least one of formation of a selected polymorph of the one or more crystalline polymorphs formed, an amount formed of a selected polymorph of the one or more crystalline polymorphs formed, and a temperature of formation of the one or more crystalline polymorphs.

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m.Math.K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/rum or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

Provided is a conventionally unavailable, novel SiSiC component. The SiSiC component has at least one long hole formed therein, wherein the long hole has a diameter of 2 mm or smaller, wherein the long hole has a length of 100 mm or longer, and wherein the content of elemental Si is 10 to 60 vol %.

The present invention relates to a porous alpha-SiC-containing shaped body with a gas-permeable, open-pored pore structure comprising platelet-shaped crystallites which are connected to form an interconnected, continuous skeletal structure, wherein the skeletal structure consists of more than 80 wt.-% alpha-SiC, relative to the total weight of SiC, a process for producing same and its use as a filter component.

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m.Math.K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/rum or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

The present invention relates to a porous alpha-SiC-containing shaped body with a gas-permeable, open-pored pore structure comprising platelet-shaped crystallites which are connected to form an interconnected, continuous skeletal structure, wherein the skeletal structure consists of more than 80 wt.-% alpha-SiC, relative to the total weight of SiC, a process for producing same and its use as a filter component.

A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m.Math.K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/mm or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

A silicon carbide based material exhibiting high strength, good thermal shock resistance, high resistance to abrasion and being chemically stable to harsh environmental conditions is described. The carbide Ball Hill ceramic comprises a -SiAlON bonding phase in which sintering is facilitated by at least one rare earth oxide sintering agents incorporated within the Vibrating Sieve batch admixture as starting materials. The residual rare earth sintering aid being chosen so as to impart good mechanical and refractory properties.