The invention provides a polishing pad suitable for polishing at least one of semiconductor, optical, magnetic or electromechanical substrates. The polishing pad includes a polyurea polishing layer and a polyurea matrix. The polyurea matrix has a soft phase and a hard phase. The soft phase is formed from soft segments and the hard phase is formed from diisocyanate hard segments and a curative agent. The soft segment areva copolymer of aliphatic fluorine-free polymer groups and a fluorocarbon having a length of a least six carbons. The polyurea matrix is cured with the curative agent and includes gas or liquid-filled polymeric microelements. The soft segments form a fluorine rich phase that concentrates adjacent the polymeric microelements and at the polishing layer during polishing. The polishing layer remains hydrophilic during polishing in shear conditions.

The purpose of the present invention is to provide a photosensitive resin composition that yields a cured film having exceptional heat resistance, elongation, chemical resistance, permittivity, and dielectric tangent while being curable under low-temperature heat treatments, the percentage of film remaining after development being exceptional. To solve the above problem, the photosensitive resin composition of the present invention has the following configuration. Specifically, a photosensitive resin composition that contains a resin (A) and a photopolymerization initiator (B), said resin (A): containing one or more structural units selected from the group consisting of specific structural units represented by formula (1), formula (3), and formula (5); and also containing one or more structural units selected from the group consisting of structural units represented by formula (2), formula (4), and formula (6).

A flame-retardant polyimide molding material containing a semi-aromatic polyimide resin (A) and further containing 15 to 80 mass % of either of the following component (B1) or component (B2): (B1) graphite (B2) a combination of two or more selected from the group consisting of graphite, a fluorine resin, and carbon fiber; and a molded article including the same.

A polyimide resin composition containing a polyimide resin (A) and a polyetherimide sulfone resin (B), wherein the polyimide resin (A) contains a repeating structural unit represented by the following formula (1) and a repeating structural unit represented by the following formula (2), and a content ratio of the repeating structural unit of the formula (1) with respect to the total of the repeating structural unit of the formula (1) and the repeating structural unit of the formula (2) is 20 to 70 mol %; and a molded article containing the same.

##STR00001##

(R.sub.1 represents a divalent group having from 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure; R.sub.2 represents a divalent chain aliphatic group having from 5 to 16 carbon atoms; and X.sub.1 and X.sub.2 each independently represent a tetravalent group having from 6 to 22 carbon atoms containing at least one aromatic ring.)

Curable polyimides and compositions thereof with very good dielectric properties are provided. Prepregs of these compositions laminated with copper foil to prepare copper clad laminates having Tg>150 C and Df<0.0025 are also provided.

A poly(etherimide) includes repeating units derived from polymerization of a biphenol dianhydride and an organic diamine. A method of making the poly(etherimide) includes contacting the biphenol dianhydride and the organic diamine under conditions effective to provide a poly(etherimide). The poly(etherimide) can be useful in a variety of articles, for example in an optoelectronic component.

A polymer is disclosed, represented by Chemical Formula 1 or Chemical Formula 2: ##STR00001## wherein, in Chemical Formula 1 and Chemical Formula 2, Ar.sup.1, Ar.sup.2, R.sup.3, s, x, and y are defined in the detailed description.

A liquid crystal display including a first substrate, a thin film transistor disposed on the first substrate, a first electrode connected to the thin film transistor, and a first alignment layer disposed on the first electrode, wherein the first alignment layer includes polyimide and a capping group connected to a main chain end of the polyimide, and the capping group contains at least one of a first compound represented by the following Chemical Formula 1, and a second compound represented by the following Chemical Formula 2: ##STR00001## A1 and A2 are, independently of each other, an aromatic compound having 4 to 20 carbon atoms or an aliphatic cyclic compound having 4 to 20 carbon atoms; and B1 and B2 are, independently of each other, a crosslinking reaction group containing an alkylene group (—C.sub.nH.sub.2n—, n is a natural number).

A polyimide resin containing a repeating structural unit represented by the following formula (1) and a repeating structural unit represented by the following formula (2), a content ratio of the repeating structural unit of formula (1) with respect to the total of the repeating structural unit of formula (1) and the repeating structural unit of formula (2) being 20 to 70 mol %, and the polyimide resin having a chain aliphatic group having from 5 to 14 carbon atoms at an end thereof:

wherein R.sub.1 represents a divalent group having from 6 to 22 carbon atoms containing at least one alicyclic hydrocarbon structure; R.sub.2 represents a divalent chain aliphatic group having from 5 to 16 carbon atoms; and X.sub.1 and X.sub.2 each independently represent a tetravalent group having from 6 to 22 carbon atoms containing at least one aromatic ring.

Provided are a polyamic acid solution that can be formed into a film without peeling even when the film is thick and can be stably stored at room temperature, and a laminate that can be suitably used for production of a flexible device. In the alkoxysilane-modified polyamic acid solution according to the present invention, an additive amount of an alkoxysilane compound that contains an amino group is more than 0.050 parts by weight and less than 0.100 parts by weight.