There is included (a) forming a film on a substrate by supplying a first processing gas to the substrate in a process container; (b) forming a first pre-coated film, which has a first thickness and has a material different from a material of the film formed in (a), in the process container by supplying a second processing gas into the process container in a state in which the substrate does not exist in the process container; and (c) forming a second pre-coated film, which has a second thickness smaller than the first thickness and has the same material as the material of the film formed in (a), on the first pre-coated film formed in the process container by supplying a third processing gas into the process container in the state in which the substrate does not exist in the process container.

There is provided a technique that includes: (a) forming a first film including a cyclic structure composed of silicon and carbon and also including nitrogen so as to fill a recess formed in a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: supplying a precursor including the cyclic structure and also including halogen to the substrate having the recess formed on its surface; and supplying a nitriding agent to the substrate; (b) converting the first film into a second film including the cyclic structure and also including oxygen by supplying a first oxidizing agent to the substrate; and (c) converting the second film into a third film including silicon and oxygen and not including carbon and nitrogen by supplying a second oxidizing agent to the substrate.

Provided is a SiC precursor for performing SiOCN thin film deposition and a method of forming SiOCN thin film, the method of forming thin film containing a silicon according to the subject matter is performed on a low temperature process that does not require a catalyst, and film deposition rate and process efficiency are excellent according to the subject matter.

The fabrication of robust interfaces between transition metal oxides and non-aqueous electrolytes is one of the great challenges of lithium ion batteries. Atomic layer deposition (ALD) of aluminum tungsten fluoride (AlW.sub.xF.sub.y) improves the electrochemical stability of LiCoO.sub.2. AlW.sub.xF.sub.y thin films were deposited by combining trimethylaluminum and tungsten hexafluoride. in-situ quartz crystal microbalance and transmission electron microscopy studies show that the films grow in a layer-by-layer fashion and are amorphous nature. Ultrathin AlW.sub.xF.sub.y coatings (<10 ) on LiCoO.sub.2 significantly enhance stability relative to bare LiCoO.sub.2 when cycled to 4.4 V. The coated LiCoO2 exhibited superior rate capability (up to 400 mA/g) and discharge capacities at a current of 400 mA/g were 51% and 92% of the first cycle capacities for the bare and AlW.sub.xF.sub.y coated materials. These results open new possibilities for designing ultrathin and electrochemically robust coatings of metal fluorides via ALD to enhance the stability of Li-ion electrodes.

Methods for forming a metal silicate film on a substrate in a reaction chamber by a cyclical deposition process are provided. The methods may include: regulating the temperature of a hydrogen peroxide precursor below a temperature of 70 C. prior to introduction into the reaction chamber, and depositing the metal silicate film on the substrate by performing at least one unit deposition cycle of a cyclical deposition process. Semiconductor device structures including a metal silicate film formed by the methods of the disclosure are also provided.

There is provided a technique that includes: removing a deposit adhering to an inside of a process container by supplying a cleaning gas into the process container after performing a process of forming a film on a substrate in the process container, wherein the act of removing the deposit includes sequentially and repeatedly performing: a first process of supplying the cleaning gas into the process container until a predetermined first pressure is reached in the process container; a second process of stopping the supply of the cleaning gas and exhausting the cleaning gas and a reaction product generated by the cleaning gas remaining in the process container; and a third process of cooling an exhaust pipe that connects the process container and a vacuum pump, while maintaining a pressure inside the process container at a second pressure, which is lower than the first pressure, or lower.

There is provided a technique that includes (a) forming a first film having a first thickness on an underlayer by supplying a first process gas not including oxidizing gas to a substrate, wherein the first film contains silicon, carbon, and nitrogen and does not contain oxygen, and the underlayer is exposed on a surface of the substrate and is at least one selected from the group of a conductive metal-element-containing film and a nitride film; and (b) forming a second film having a second thickness larger than the first thickness on the first film by supplying a second process gas including oxidizing gas to the substrate, wherein the second film contains silicon, oxygen, and nitrogen, and wherein in (b), oxygen atoms derived from the oxidizing gas and diffuse from a surface of the first film toward the underlayer are absorbed by the first film and the first film is modified.

A method of forming a low-k layer includes forming a layer by providing a silicon source, a carbon source, an oxygen source, and a nitrogen source onto a substrate. The forming of the layer includes a plurality of main cycles, and each of the main cycles includes providing the silicon source, providing the carbon source, providing the oxygen source, and providing the nitrogen source, each of which is performed at least one time. Each of the main cycles includes sub-cycles in which the providing of the carbon source and the providing of the oxygen source are alternately performed.

There is provided a technique that includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) supplying a precursor gas to the substrate in a process container of a substrate processing apparatus via a first pipe made of metal; (b) supplying an oxygen-containing gas to the substrate in the process container via a second pipe made of metal, wherein a fluorine-containing layer is continuously formed on an inner surface of the second pipe; and (c) supplying a nitrogen-and-hydrogen-containing gas to the substrate in the process container via the second pipe.

A method of fabricating a semiconductor device, the method including forming semiconductor patterns on a substrate such that the semiconductor patterns are vertically spaced apart from each other; and forming a metal work function pattern to fill a space between the semiconductor patterns, wherein forming the metal work function pattern includes performing an atomic layer deposition (ALD) process to form an alloy layer, and the ALD process includes providing a first precursor containing an organoaluminum compound on the substrate, and providing a second precursor containing a vanadium-halogen compound on the substrate.