A film forming apparatus configured to form a metal oxide film or a metal nitride film through atomic layer deposition by alternately introducing metal compound gas and an OH radical or an NH radical in a reaction container. The film forming apparatus including: the reaction container; and at least one plasma generator provided outside the reaction container and configured to generate a first plasma including an oxygen radical or a nitrogen radical when oxygen or nitrogen is supplied and generate a second plasma including a hydrogen radical when hydrogen is supplied. The OH radical is generated by collision between the oxygen radical and the hydrogen radical or the NH radical is generated by collision between the nitrogen radical and the hydrogen radical in a downstream region from an outlet of the at least one plasma generator to an inner space of the reaction container.

A deposition or cleaning apparatus comprising an outer vacuum chamber and a reaction chamber inside the outer chamber forming a double chamber structure. The reaction chamber is configured to move between a processing position and a lowered position inside the outer vacuum chamber, the lowered position being for loading one or more substrates into the reaction chamber.

A deposition apparatus including a chamber, a platform, a shower head, a bias power supply, a first injection device, and a second injection device is provided. The platform and the shower head are disposed in the chamber, and the platform is configured to carry a substrate having a high aspect ratio structure. The bias power supply is coupled to the platform. The first injection device and the second injection device are connected to the chamber; the first injection device injects a first precursor or a first inert gas into the chamber along a first direction through the shower head, and the second injection device injects a second precursor or a second inert gas into the chamber along a second direction perpendicular to the first direction. When the first precursor or the second precursor is injected into the chamber, the bias power supply is turned on. When the first inert gas or the second inert gas is injected into the chamber, the bias power supply is turned off. A deposition method is also provided.

A film deposition apparatus includes a process chamber, a rotary table, a first reaction gas supply part disposed in a first process region and configured to supply a first reaction gas, a second reaction gas supply part disposed in a second process region apart from the first reaction gas supply part in a circumferential direction of the rotary table and configured to supply a second reaction gas, and separation gas supply parts disposed in a separation region between the first reaction gas supply part and the second reaction gas supply part and configured to supply a separation gas for separating the first reaction gas and the second reaction gas. The separation gas supply parts are configured to supply, in addition to the separation gas, an additive gas for controlling adsorption of the first reaction gas or for etching a part of material components included in the first reaction gas.

In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a substrate, a heater configured to heat the substrate contained in the container, and an injector configured to feed gas to the substrate contained in the container. Furthermore, the injector includes a first layer having a tubular shape, and a second layer provided on a surface of the first layer, and having an emissivity of 0.5 or less.

Disclosed are an apparatus for layer control-based synthesis and a method of using the same.

A substrate processing apparatus includes a chamber, a stage provided in the chamber, a shower head in which a plurality of slits are formed, and which is opposed to the stage, an opening/closing part for opening and closing the plurality of slits, a first gas supply part which supplies a gas to a space between the stage and the shower head via the plurality of slits, and a second gas supply part which is connected to a side wall of the chamber, and which supplies a gas to the space between the stage and the shower head.

An atomic layer deposition apparatus includes a first base plate on which a seat portion is defined to allow a substrate to be seated thereon, a second base plate disposed opposite to the first base plate, a first gas nozzle portion arranged on the second base plate, a second gas nozzle portion arranged on the second base plate to be spaced apart from the first gas nozzle portion and substantially parallel to the first gas nozzle portion, and a gas storage portion connected to the first gas nozzle portion and the second gas nozzle portion.

A method of forming a microelectronic device comprises treating a base structure with a first precursor to adsorb the first precursor to a surface of the base structure and form a first material. The first precursor comprises a hydrazine-based compound including Si—N—Si bonds. The first material is treated with a second precursor to covert the first material into a second material. The second precursor comprises a Si-centered radical. The second material is treaded with a third precursor to covert the second material into a third material comprising Si and N. The third precursor comprises an N-centered radical. An ALD system and a method of forming a seal material through ALD are also described.

In one example, an apparatus includes a processing chamber; a substrate holder disposed in the processing chamber; and a showerhead disposed over the substrate holder. The showerhead includes a first zone disposed in a central region of the showerhead, the first zone including a first cavity, a plurality of first fluid exit holes aligned to output a fluid from the first cavity towards the substrate holder, a first flow path fluidly coupled to a fluid source, and a plurality of first fluid distribution pathways fluidly coupling the first flow path with the first cavity.