A method creating a patterned film with cuprous oxide and light comprising the steps of electrodepositing copper from a solution onto a substrate; illuminating selected areas of said deposited copper with light having photon energies above the band gap energy of 2.0 eV to create selected illuminated sections and non-illuminated sections; and stripping non-illuminated sections leaving said illuminated sections on the substrate. An additional step may include galvanically replacing the copper with one or more noble metals.

Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.

A substrate liquid processing apparatus configured to perform a heating control over a processing liquid on a substrate with high accuracy in a unit of zones is provided. The substrate liquid processing apparatus includes a substrate holder configured to hold the substrate; a processing liquid supply configured to supply the processing liquid onto a processing surface of the substrate; and a heating unit configured to heat the processing liquid on the processing surface. The heating unit includes a heater, and a first sheet-shaped body and a second sheet-shaped body which are disposed to face the heater therebetween. The heater includes multiple heating elements provided in multiple heating zones of the heating unit.

The semiconductor device includes a first electrode, a second electrode electrically coupled to the first electrode, and a third electrodes electrically coupled to at least one of the first and the second electrode, a first plating deposition portion on the first electrode, a second and a third plating deposition portions formed on the second and the third electrode, respectively. The areas of the second and the third plating deposition portion are smaller than the area of the first plating deposition portion. The periphery length of the third plating deposition portion is longer than the periphery length of the second plating deposition portion.

The semiconductor device includes a first electrode, a second electrode electrically coupled to the first electrode, and a third electrodes electrically coupled to at least one of the first and the second electrode, a first plating deposition portion on the first electrode, a second and a third plating deposition portions formed on the second and the third electrode, respectively. The areas of the second and the third plating deposition portion are smaller than the area of the first plating deposition portion. The periphery length of the third plating deposition portion is longer than the periphery length of the second plating deposition portion.

Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.

Methods for forming thin, pinhole-free conformal metal layers on both conducting and non-conducting surfaces, where the morphology and properties of the metal layers are tuned to meet desired parameters by adjusting the concentration of ionic liquids during the deposition process. The formed metal films contain tunable properties for solar and electronic use and provide specific advantages for non-conducting surfaces, which are otherwise unsuitable for electroplating without the presence of the formed metal films. The disclosed methods do not require the presence of a voltage or external electric field but form the metal films through an electroless technique using electrostatic interactions between negatively charged nanoparticles. In addition, the disclosed methods are compatible with solution phase processing and eliminate the need to transfer the surfaces into a vacuum chamber for a chemical or physical vapor deposition to form a metal layer.

First, in a first step S101, a semiconductor layer composed of a p type Group III-V compound semiconductor is prepared. The semiconductor layer may be composed of a Group III-V compound semiconductor crystal. Next, in a second step S102, gold is grown on a surface of the above semiconductor layer according to an electroless plating method to form fine gold particles. In this step, for example, an electroless plating solution of gold is brought into contact with a surface of the semiconductor layer such as by immersing the semiconductor layer in the electroless gold plating solution. In addition, in this plating treatment, the liquid temperature of the electroless gold plating solution may be room temperature (about 20° C. to 30° C.).

A substrate liquid processing apparatus configured to perform a heating control over a processing liquid on a substrate with high accuracy in a unit of zones is provided. The substrate liquid processing apparatus includes a substrate holder configured to hold the substrate; a processing liquid supply configured to supply the processing liquid onto a processing surface of the substrate; and a heating unit configured to heat the processing liquid on the processing surface. The heating unit includes a heater, and a first sheet-shaped body and a second sheet-shaped body which are disposed to face the heater therebetween. The heater includes multiple heating elements provided in multiple heating zones of the heating unit.

On a surface of a substrate having a plateable material portion and a non-plateable material portion, a polymer compound, which selectively reacts with an OH end group of the non-plateable material portion, is supplied. By performing a catalyst imparting processing on the substrate on which the polymer compound is supplied, a catalyst is selectively imparted to the plateable material portion. Further, by performing a plating processing on the substrate, a plating layer is selectively formed on the plateable material portion. Before or after forming the plating layer, the polymer compound on the substrate is removed.