A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.

Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.

An electroless plating apparatus includes: a plating bath; a reserve tank; a retaining means for retaining a plurality of semiconductor wafers upright at regular intervals; a plating liquid circulating path; a circulating pump; a flowmeter and a plating liquid supply pipe having a plurality of spouts formed in an upper part thereof at regular intervals. The regular intervals at which the plurality of semiconductor wafers are retained upright by the retaining means are the same as the regular intervals at which the plurality of spouts are formed in the upper part of the plating liquid supply pipe. The plurality of spouts formed on the upper part of the plating liquid supply pipe may be positioned within the regular intervals between the plurality of semiconductor wafers being retained by the retaining means.

A method is provided for metallisation of non-conductive substrates providing a high adhesion of the deposited metal to the substrate material and thereby forming a durable bond. The method applies a metal oxide adhesion promoter which is activated and then metal plated. The method provides high adhesion of the non-conductive substrate to the plated metal layer.

The invention relates to a depositing station comprising a basin arrangement (11) having a basin (13) forming a processing chamber (12) and serving to receive a solution of a metal, in particular nickel, zinc, palladium, gold or the like, dissolved in a liquid, for a, preferably electroless, deposition on an object receivable in the processing chamber, in particular on a terminal face of a wafer receivable in the processing chamber, the basin having at least one inlet (17) for introducing the solution into the basin, the basin having a perforation (18) which forms at least part of the inlet of the basin and which is configured to homogeneously introduce the solution into the processing chamber. Furthermore, the invention relates to a device for producing contact metallizations on terminal faces of wafers, comprising at least one depositing station.

Described herein are the depositions of conductive metallic films on a surface which contains topography. The deposition uses a metallic precursor comprises a neutral (uncharged) metal compound in which the metal atom is in the zerovalent state and stabilized by ligands which are stable as uncharged, volatile species.

A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.

A method of electroless nickel plating on surface of silicon carbide powder with a uniform and stable coating. In this method, ultrasonic assist is introduced in the pre-treatment and during plating process, and the powder particles in the liquid are dispersed and deagglomerated by the mechanical action and cavitation of the ultrasonic waves, thereby achieving a uniform dispersion of the powder in the dispersant. Furthermore, a reducing agent is slowly added during plating so as to give a more uniform and stable deposition of the coating onto the surface of the powder particles, and thus a silicon carbide core-nickel shell structure with an excellent powder dispersibility and a uniform and stable coating is produced.

The present invention relates to a method for directly depositing palladium onto a non-activated surface of a gallium nitride semiconductor, the use of an acidic palladium plating bath (as defined below) for directly depositing metallic palladium or a palladium alloy onto a non-activated surface of a doped or non-doped gallium nitride semiconductor, and a palladium or palladium alloy coated, doped or non-doped gallium nitride semiconductor.

A method creating a patterned film with cuprous oxide and light comprising the steps of electrodepositing copper from a solution onto a substrate; illuminating selected areas of said deposited copper with light having photon energies above the band gap energy of 2.0 eV to create selected illuminated sections and non-illuminated sections; and stripping non-illuminated sections leaving said illuminated sections on the substrate. An additional step may include galvanically replacing the copper with one or more noble metals.