Anti-multipactor coating deposited on an RF or MW component, by surface texturing of such a coating by laser.

The invention relates to a formation method by laser ablation, on a metal substrate, of an anti-multipactor coating whose constituent material is chosen from amongst the metals of column 10 or column 11 of the Mendeleev table or an alloy of these metals and whose texture comprises one or more patterns of cavities repeated at regular intervals, the interval pitch between two adjacent cavities being in the range between 0 and 100 m.

A method that can plate a predetermined position on various plating targets without implementing a pretreatment thereon is provided. A plating method is performed on a plating target using a plating solution, and the plating method includes at least a bubble ejection step of ejecting a bubble generated by a bubble ejection member to a plating solution. The bubble ejection member includes an electrode formed of a conductive material and an insulating material covering at least a part of the electrode, at least a part of the insulating material forms a bubble ejection port, and an air gap surrounded by the insulating material is formed between at least a part of the electrode and the bubble ejection port.

The invention relates to anti-multipactor coating deposited onto a substrate that can be exposed to the air and its procedure of obtainment by simple chemical methods. Furthermore, the present invention relates to its use for the fabrication of high power devices working at high frequencies.

Provided is a semiconductor-manufacturing apparatus that forms a plated film having a highly homogeneous thickness on a target surface of a semiconductor wafer through electroless plating. A semiconductor-manufacturing apparatus forms plated films on target surfaces of a plurality of wafers held by a carrier capable of holding the wafers. The semiconductor-manufacturing apparatus includes the following: a rectification mechanism including a rectification plate having a plurality of through-holes, the rectification mechanism being held by the carrier in such a manner that the rectification plate faces the target surface of each wafer; a bath in which a chemical solution for forming each plated film is stored, and in which the carrier, holding the plurality of wafers and the rectification mechanism, is immersed in the chemical solution; and a driver configured to shake the carrier as immersed in the bath with a relative positional relationship between each wafer and the through-holes kept constant.

The invention provides a heat exchange element comprising a substrate and a coating, wherein the coating is present on at least a part of a flow path defined by the heat exchange element. The coating comprises a metal and has a structure comprising spikes having a length of up to 100 m; the average length of the spikes various throughout the coating. The invention also provides a method of transferring heat to or from a fluid which comprises providing the fluid to a flow path of the heat exchange element of the invention. The invention further provides a process for producing a heat exchange element of the invention, wherein the process comprises providing an electroless deposition solution to a surface of a substrate. The invention further provides a flow process for producing a heat exchange element and a heat exchange element obtained or obtainable by that process.

A substrate liquid processing apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a processing liquid supply unit 53 configured to supply a processing liquid L1 onto a top surface of the substrate W held by the substrate holding unit 52; and a cover body 6 configured to cover the substrate W. Here, the cover body 6 includes a ceiling unit 61 disposed above the substrate W, a sidewall unit 62 downwardly extended from the ceiling unit 61, and a heating unit 63 provided at the ceiling unit 61 and configured to heat the processing liquid L1 on the substrate W. The sidewall unit 62 of the cover body 6 is placed at an outer periphery side of the substrate W when the processing liquid L1 on the substrate W is heated.

Systems and methods for nickel plating include providing a tank that retains a plating bath into which a substrate is submerged, and creating a horizontal flow of processing solution in the plating bath to assist in carrying contaminants out of the plating bath. A sparger box may be positioned in the tank to deliver the processing solution into the plating bath in a horizontal direction. The processing solution, which carries the contaminants, may exit the plating bath through a plate member that includes a plurality of orifices and is also positioned in the tank. The orifices may have a variable opening size to help control outflow of the processing solution.

Provided is a semiconductor-manufacturing apparatus that forms a plated film having a highly homogeneous thickness on a target surface of a semiconductor wafer through electroless plating. A semiconductor-manufacturing apparatus forms plated films on target surfaces of a plurality of wafers held by a carrier capable of holding the wafers. The semiconductor-manufacturing apparatus includes the following: a rectification mechanism including a rectification plate having a plurality of through-holes, the rectification mechanism being held by the carrier in such a manner that the rectification plate faces the target surface of each wafer; a bath in which a chemical solution for forming each plated film is stored, and in which the carrier, holding the plurality of wafers and the rectification mechanism, is immersed in the chemical solution; and a driver configured to shake the carrier as immersed in the bath with a relative positional relationship between each wafer and the through-holes kept constant.

A composition comprising a plurality of coated metal particles with a metal core surrounded by nested shells formed by an electrically conductive layer and by a barrier layer, at least one of the shells being formed by electroless plating. The invention also comprises a method of producing such compositions as well as the use of the composition in, for example, crystalline-silicon solar cell devices having contact structures formed on one or more surfaces of a solar cell device, such as those used in back contact solar cell devices or emitter wrap through (EWT) solar cell devices.

A roll-to-roll electroless plating system including a reservoir containing a plating solution. A web advance system advances a web of substrate though the plating solution in the reservoir along a web advance direction, wherein a plating substance in the plating solution is plated onto predetermined locations on a surface of the web of substrate. A pump circulates plating solution from an output of the reservoir to an inlet of the reservoir located below the web of substrate. A spreader duct includes a channel that is in fluidic communication with the inlet of the reservoir, wherein the channel is positioned below the web of substrate and includes at least one outlet disposed beyond the first edge or the second edge of the web of substrate and has no outlets disposed immediately below the web of substrate.