A non-aqueous silver precursor composition contains at least 1 weight % of one or more (a) polymers that are certain cellulosic polymers; (b) reducible silver ions; and(c) an organic solvent medium consisting of: (i) a hydroxylic organic solvent having an -hydrogen atom and a boiling point at atmospheric pressure of 100-500 C., and, optionally, (ii) a nitrile-containing aprotic solvent or a carbonate-containing aprotic solvent different from the (i) organic solvent, each having a boiling point at atmospheric pressure of 100-500 C. The (b) reducible silver ions are present in an amount of 0.1-400 weight %, based on the total weight of the one or more (a) polymers. This composition can be used to form silver nanoparticles under silver ion reducing conditions and then applied to various substrates to provide silver nanoparticle patterns.

An article has a substrate and a pattern of a dry silver nanoparticle-containing composition comprising at least 20 weight % of one or more (a) polymers, that are cellulosic polymers; (d) silver nanoparticles having a mean particle size of 25-750 nm and present in an amount of 0.1-400 weight %, based on the total weight of the one or more (a) polymers; and (e) carbon black in an amount of 5-50 weight %, based on the total weight of the one or more (a) polymers. Such patterns can have multiple fine lines of any geometric arrangement. The article can have multiple patterns of this type, and each pattern can be electrolessly plated with a suitable metal such as copper to provide electrically-conductive product articles.

A solution including a precious metal nanoparticle and a polymer polymerized from at least two monomers, (1) a monomer having two or more carboxyl groups or carboxyl acid salt groups and (2) a monomer which has ? electron-available features. The solution is useful for a catalyst of a process for electroless plating a metal on non-conductive surface.

A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.

A process for improving the performance of the sliding rheostat of 5G communication high-frequency signal board with the sliding rheostat slides along between two bonding pads, includes the following steps: outer layer etching; resin plugging: a. plugging the resinous ink into the pre-plugging position; b: baking, baking on the baking plate of the oven after the plugging is finished: board polishing: using a ceramic brush to process the plugged board, then using a non-woven fabric blush to polish the surface that is polished by ceramic brush. The present invention provides a process for improving the performance of the sliding rheostat of 5G communication high-frequency signal board. The resin plugging method is used to plug the gap between the conductors of the sliding rheostat, so as to prevent the sliding rheostat from being unable to slide due to the altitude difference between conductors of the high-frequency signal board.

A method of electroless gold plating includes a step of forming an underlying alloy layer on a base material and a step of forming a gold plate layer directly on the underlying alloy layer by electroless reduction plating using a cyanide-free gold plating bath. The underlying alloy layer is formed of an M1-M2-M3 alloy, where M1 is at least one element selected from Ni, Fe, Co, Cu, Zn, where Sn, M2 is at least one element selected from Pd, Re, Pt, Rh, Ag and where Ru, and M3 is at least one element selected from P and B.

A plating method includes: providing a work piece which is metal or non-metal; forming a printed layer on a predetermined region of a surface of the work piece through printing electrical conductive material on the predetermined region; forming a plated layer through plating the printed layer and the surface of the work piece.

An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

A method for manufacturing a heat exchanger including forming a heat exchanger with walls using direct metal laser melting. The walls include defects formed during the direct metal laser melting process. The defects can cause leaking within the heat exchanger. The method includes healing the defects.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.