A method of plating a component includes specifying a sample type, specifying an area to be cleaned, programming a laser based on the sample type and specifications of the area to be cleaned, applying laser ablation on a surface of the area to be cleaned, performing surface activation if required, and performing electroless deposition.

Cleaning solution for cleaning and/or wetting metal surfaces, comprising at least one acid, a first surfactant, which is an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of 25 C., a second surfactant, which is selected from the group consisting of i) an alkyl-poly(ethyleneglycol-co-propyleneglycol)-ether having a cloud point of 30 C., ii) an alkyl-polyethyleneglycol-ether having a cloud point of 45 C.
wherein the cloud points are determined according to European Standard EN 1890:2006, item 8.2 of German Version, with the modification that 10 wt % H.sub.2SO.sub.4 is used as solvent and that the concentration of the surfactant is 1000 mg/L.

Provided is a method of manufacturing a printed circuit nano-fiber web. A method of manufacturing a printed circuit nano-fiber web according to an embodiment of the present invention includes (1) a step of electrospinning a spinning solution including a fiber-forming ingredient to manufacture a nano-fiber web; and (2) a step of forming a circuit pattern to coat an outer surface of nano-fiber included in a predetermined region on the nano-fiber web using an electroless plating method. According to the present invention, a circuit pattern-printed nano-fiber web having flexibility and resilience suitable for future smart devices may be realized. In addition, a circuit pattern may be densely formed to a uniform thickness on a flexible nano-fiber web using an electroless plating method, and the flexible nano-fiber web may include a plurality of pores. Accordingly, since the printed circuit nano-fiber web may satisfy waterproofness and air permeability characteristics, it can be used in various future industrial fields including medical devices, such as biopatches, and an electronic device, such as smart devices.

The present invention provides for depositing a desired pattern (31) of magnetic material (30) on a non-magnetic substrate (20). Control of the deposition pattern (31) is achieved by use of a magnetised template (10) shaped to correspond to the desired deposition pattern. In use, the template (10) is placed behind the substrate (20). Subsequently, the front surface of the substrate (20) is exposed to a solution containing the magnetic material (30) to be deposited. The magnetic material (30) is attracted to the magnetised template (10) and consequently is deposited in a pattern (31) covering areas corresponding to the shape of the template (10).

A multilayer body of the present disclosure includes a support, a bismuth-including layer, and an intermediate layer. The bismuth-including layer includes at least one selected from the group consisting of pure bismuth, a bismuth alloy, bismuth oxide, and a composite oxide including bismuth. The intermediate layer includes at least one selected from the group consisting of pure zinc, a zinc alloy, pure tin, a tin alloy, pure lead, and a lead alloy. Additionally, the intermediate layer is disposed between the bismuth-including layer and the support in a thickness direction of the bismuth-including layer.

The invention relates to a chromium-based coating comprising at least one layer rich in crystalline phase or phases of nickel (Ni) and/or Ni compounds, and at least one layer rich in crystal-line phase or phases of chromium (Cr) and/or Cr compounds, Cr being electroplated from a trivalent chromium bath. The coating is characterized in that the it further comprises one or more crystalline phases of chromium-nickel-phosphorus (CrNiP), which CrNiP phase has been produced by heat treating a coating comprising at least one layer of nickel-phosphorus (NiP) and at least one layer of Cr. The invention also relates to a method for producing a chromiumbased coating and to a coated object.

The filter 105 used in a cell trapping device includes a sheet-like body portion (base metal plating layer 5) containing nickel or copper as a main component and provided with a plurality of through-holes in the thickness direction; a palladium layer 7 containing palladium as a main component and covering the surface of the body portion; and a gold layer 8 containing gold as a main component and covering the surface of the palladium layer.

A method of manufacturing a package, comprising embedding the semiconductor chip with an encapsulant comprising a transition metal in a concentration in a range between 10 ppm and 10,000 ppm; selectively converting of a part of the transition metal, such that the electrical conductivity of the encapsulant increases; and plating the converted part of the encapsulant with an electrically conductive material.

Systems and methods may be used to produce coated components. Exemplary chamber components may include an aluminum plate defining a plurality of apertures. The plate may include a nickel coating on a textured aluminum plate to provide for adhesion. Implementing the present technology, the nickel coating may be firmly affixed with or without first applying an intermediate adhesion layer. Deleterious components from the intermediate adhesion layer (if present) may not contaminate substrates as readily as a consequence of the texturing of the aluminum plate. The contamination from the intermediate adhesion layer is undesirable and may electrically compromise semiconductor devices during processing.

A method of activating a metal structure on an intermediate semiconductor device structure toward metal plating. The method comprises providing an intermediate semiconductor device structure comprising at least one first metal structure and at least one second metal structure on a semiconductor substrate. The at least one first metal structure comprises at least one aluminum structure, at least one copper structure, or at least one structure comprising a mixture of aluminum and copper and the at least one second metal structure comprises at least one tungsten structure. One of the at least one first metal structure and the at least one second metal structure is activated toward metal plating without activating the other of the at least one first metal structure and the at least one second metal structure. An intermediate semiconductor device structure is also disclosed.