A metalizing bath for an electroless plating system includes a metal ion source, a reducing agent, insoluble particulate matter, and stabilizing components, wherein the stabilizing components comprise at least one anionic surfactant and at least one cationic surfactant.

A base material for a printed circuit board includes: an insulating base film; a sintered layer that is layered on at least one side surface of the base film and that is formed of a plurality of sintered metal particles; an electroless plating layer that is layered on a surface of the sintered layer that is opposite to the base film; and an electroplating layer that is layered on a surface of the electroless plating layer that is opposite to the sintered layer, wherein an arithmetic mean height Sa of the surface of the electroless plating layer opposite to the sintered layer is greater than or equal to 0.001 m and less than or equal to 0.5 m.

A semiconductor substrate has, on an Au electrode pad, an electrolessly-plated Ni film/an electrolessly-plated Pd film/an electrolessly-plated Au film or an electrolessly-plated Ni film/an electrolessly-plated Au and a method of manufacturing the semiconductor substrate by the steps indicated in (1) to (6) below: (1) a degreasing step; (2) an etching step; (3) a pre-dipping step; (4) a Pd catalyst application step; (5) an electroless Ni plating step; (6) an electroless Pd plating step and electroless Au plating step or an electroless Au plating step.

A base material for a printed circuit board includes: an insulating base film; a sintered layer that is layered on at least one side surface of the base film and that is formed of a plurality of sintered metal particles; an electroless plating layer that is layered on a surface of the sintered layer that is opposite to the base film; and an electroplating layer that is layered on a surface of the electroless plating layer that is opposite to the sintered layer, wherein an arithmetic mean height Sa of the surface of the electroless plating layer opposite to the sintered layer is greater than or equal to 0.001 m and less than or equal to 0.5 m.

There are provided: an aluminum alloy magnetic disk substrate including: an aluminum alloy base material including an aluminum alloy containing 0.4 to 3.0 mass % (hereinafter, simply referred to as %) of Fe, 0.1 to 3.0% of Mn, 0.005 to 1.000% of Cu, and 0.005 to 1.000% of Zn, with the balance of Al and unavoidable impurities; and an electroless NiP plated layer formed on a surface of the aluminum alloy base material, in which the peak value (BLEI) of Fe emission intensity at an interface between the electroless NiP plated layer and the aluminum alloy base material, as determined by a glow discharge optical emission spectrometry device, is lower than Fe emission intensity (AlEI) in the interior of the aluminum alloy base material, as determined by the glow discharge optical emission spectrometry device; and a method for producing the aluminum alloy magnetic disk substrate.

Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.

Graphene oxide is used as an insulation barrier layer for metal deposition. After patterning and modification, the chemical characteristics of graphene oxide are induced. It can be used as the catalyst for electroless plating in the metallization process, so that the metal is only deposited on the patterned area. It provides the advantages of improving reliability and yield. The metallization structure includes a substrate, a graphene oxide catalytic layer, and a metal layer. It may be widely applied to the metallization of the fine pitch metal of a semiconductor package as well as the fine pitch wires of a printed circuit board (PCB), touch panels, displays, fine electrodes of solar cells, and so on.

The invention relates to a method of manufacture of a scroll compressor (1), in particular for pretreatment for the coating of areas in contact with one another during operation of the scroll compressor (1). The scroll compressor (1) is developed with a non-movable spiral (3) with a base plate (3a) and a spiral-form wall (3b) extending from one side of the base plate (3a), as well as with a movable spiral (4) with a base plate (4a) and a spiral-form wall (4b) extending from a front side of the base plate (4a). The spirals (3, 4) are developed out of a basis material.

A film forming apparatus is connected to a carbon steel purification system piping of a BWR plant (S1). Formic acid (surface purification agent) is injected into a circulation piping of the film forming apparatus (S4). A surface purification agent aqueous solution containing 30000 ppm of formic acid is contacted with the inner surface of the purification system piping, and a large amount of Fe.sup.2+ is dissolved from the purification system piping, and a large amount of electrons are generated by this dissolution. Thereafter, a formic acid Ni aqueous solution is injected into the surface purification agent aqueous solution to produce a film forming aqueous solution (S5). The film forming aqueous solution storing the electrons is contacted with the inner surface of the purification system piping, and Ni ions incorporated into the inner surface are reduced by the electrons, and a Ni metal film is formed on the inner surface. Platinum ions and a reducing agent are injected into the circulation piping (S9, S10), and an aqueous solution containing the platinum ions and the reducing agent is supplied to the purification system piping to deposit platinum on the surface of the Ni metal film.

Methods, systems, and apparatus for coating the internal surface of nano-scale cavities on a substrate are contemplated. A first fluid of high wettability is applied to the nano-scale cavity, filling the cavity. A second fluid carrying a conductor or a catalyst is applied over the opening of the nano-scale cavity. The second fluid has a lower vapor pressure than the first fluid. The first fluid is converted to a gas, for example by heating the substrate. The gas exits the nano-scale cavity, creating a negative pressure or vacuum in the nano-scale cavity. The negative pressure draws the second fluid into the nano-scale cavity. The conductor is deposited on the interior surface of the nano-scale cavity, preferably less than 10 nm thick.