The present disclosure provides a new wet atomic layer etch (ALE) process for etching copper. More specifically, the present disclosure provides various embodiments of methods that utilize new etch chemistries for etching copper in a wet ALE process. By utilizing the new etch chemistries disclosed herein within a wet ALE process, the present disclosure provides a highly selective etch of copper with monolayer precision.

Azeotrope or azeotrope-like compositions and, in particular, azeotrope or azeotrope-like compositions consisting essentially of, or consisting of, (Z)-1-chloro-2,3,3-trifluoroprop-1-ene (HCFO-1233yd(Z)) with each of ethanol and methanol, as well as azeotrope or azeotrope-like compositions consisting essentially of, or consisting of, (Z)-1-chloro-2,3,3-trifluoroprop-1-ene (HCFO-1233yd(Z)), ethanol and trans-dichloroethylene (trans-DCE), and azeotrope or azeotrope-like compositions consisting essentially of, or consisting of, (Z)-1-chloro-2,3,3-trifluoroprop-1-ene (HCFO-1233yd(Z)), methanol and trans-dichloroethylene (trans-DCE), and solvent applications of the foregoing compositions.