A dryer for increasing the dryness by fixing the inside of a bowl-shaped workpiece toward a rotating table side is provided. A dryer for drying an object includes a rotatable hollow cylindrical rotation shaft, a center shaft supported inside of the rotation shaft via a bearing and does not rotate, the center shaft having an inner blow passage therein extending along the center shaft, a rotation plate fixed to the first end of the rotation shaft; an inner fixed nozzle extending along the first end of the rotation shaft from the center shaft, a jig disposed on the rotation plate for fixing the object, a drive motor for rotating the rotation shaft, and a blower connected to the inner blow passage.

A wafer drying equipment includes a base, a casing and a microwave generator. The base is configured to support a wafer. The casing forms a chamber with the base. The chamber is configured to accommodate the wafer. The casing has an exhaust vent away from the base. The microwave generator is disposed on the casing and is configured to emit a microwave to the chamber.

A wafer drying method to detect airborne molecular contaminants in a drying gas as a feedback parameter for a single wafer or multi-wafer drying process is provided. For example, the method includes dispensing in a wafer drying station a drying gas over one or more wafers; collecting the drying gas from an exhaust of the wafer drying station; determining the concentration of contaminants in the drying gas; re-dispensing the drying gas over the one or more wafers if the concentration of contaminants is higher than a baseline value; and transferring the one or more wafers out of the wafer drying station if the concentration is equal to or less than the baseline value.

The present disclosure is directed to a wafer drying system and method that detects airborne molecular contaminants in a drying gas as a feedback parameter for a single wafer or multi-wafer drying process. For example, the system comprises a wafer drying station configured to dispense a drying gas over one or more wafers to dry the one or more wafers, a valve configured to divert the drying gas to a first portion and a second portion, and an exhaust line configured to exhaust the first portion of the drying gas. The system further comprises a detector configured to receive the second portion of the drying gas and to determine a real time property of the second portion of the drying gas, and a control unit configured to control a feedback operation of the wafer drying station based on the real time property of the second portion of the drying gas.

A substrate drying apparatus, a substrate drying method and a storage medium are capable of sublimating a sublimable substance filled in recesses of a pattern formed on a substrate while preventing pattern collapse. A first unit includes a solution supplier which supplies a sublimable substance solution containing a sublimable substance and a solvent to a processing surface, and a first liquid remover which forms a solid film of the sublimable substance on the processing surface by removing the solvent and a processing liquid from the processing surface. A second unit includes a second liquid remover which vaporize the solvent and the processing liquid remaining in the solid film by heating the substrate, and maintaining the substrate at a temperature within a first temperature range, and a solid film remover which remove the solid film from the processing surface by heating the substrate at a temperature within a second temperature range.

A processing liquid containing a sublimable material is supplied to a front surface of a substrate to which a liquid adheres to form a liquid film. The liquid film is solidified into a solidified body. Nitrogen gas is supplied to the solidified body formed on the front surface of the substrate so that the flow rate thereof per unit area is constant over the entire surface of the substrate. The solidified body is sublimated uniformly over the entire surface of the substrate, and a gas-solid interface of the solidified body moves in a direction perpendicular to the front surface of the substrate. This precludes protrusions of a pattern from being pulled by the movement of the gas-solid interface of the solidified body, whereby the front surface of the substrate is dried well while the collapse of the pattern formed on the front surface of the substrate is prevented.

A machine for processing textile substrates includes a base configured to receive a substrate support carrying a textile substrate, and may further include a nozzle assembly supported above the base for applying pretreatment liquid to a pretreatment area of the substrate during relative movement between the nozzle assembly and the substrate support along a conveying direction. A forced air assembly is supported above the base for movement transverse to the conveying direction. A controller that controls the relative movement between the substrate support and the nozzle assembly along the conveying direction, or the movement of the forced air assembly along the second axis based on information related to a pretreatment area or a print area of the textile substrate in order to direct heated air from the forced air assembly onto an area of the textile substrate substantially corresponding to the pretreatment area or the print area.

A wafer drying equipment includes a base, a casing and a microwave generator. The base is configured to support a wafer. The casing forms a chamber with the base. The chamber is configured to accommodate the wafer. The casing has an exhaust vent away from the base. The microwave generator is disposed on the casing and is configured to emit a microwave to the chamber.

A method of and apparatus for cleaning a semiconductor chip, the method including applying a first polar composition to a protection layer on a surface of at least one semiconductor chip to remove a particle from the surface of the at least one semiconductor chip and suspend the particle in the first polar composition; and applying a second polar composition, having a surface tension that is lower than that of the first polar composition, to a central portion of the applied first polar composition to push the first polar composition and the particle toward an outskirt of the at least one semiconductor chip.

A substrate treating apparatus is disclosed. The apparatus may include a housing including an upper body and a lower body coupled to each other to define a treatment space, the lower body being provided below the upper body, a supporting unit coupled to the upper body, the supporting unit supporting an edge of a substrate disposed in the treatment space, a fluid supplying unit configured to supply fluid into the treatment space, a sealing member provided between and in contact with the upper and lower bodies, the sealing member hermetically isolating the treatment space from an outer space, and an isolation plate installed between the sealing member and the supporting unit. The isolation plate may be provided to face the sealing member.