Methods and apparatus are provided for reducing the thermal signal noise in process chambers using a non-contact temperature sensing device to measure the temperature of a component in the process chamber. In some embodiments, a susceptor for supporting a substrate in a process chamber includes a first surface comprising a substrate support surface; and a second surface opposite the first surface, wherein a portion of the second surface comprises a feature to absorb incident radiant energy.

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a heat insulating plate in a substrate retainer to a processing temperature by an electromagnetic wave, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the processing temperature; (b) heating a test object provided with a chip that does not transmit a detection light of the thermometer and accommodated in the substrate retainer to the processing temperature, and measuring a temperature change of the chip by the thermometer until the processing temperature; (c) acquiring a correlation between the temperature change of the heat insulating plate and that of the chip based on measurement results; and (d) controlling a heater to heat the substrate based on the correlation and the temperature of the heat insulating plate measured by the thermometer.

A workpiece support for a thermal processing system is provided. The workpiece support includes a rotor configured to support a workpiece. The workpiece support further includes a gas supply. The gas supply can include a plurality of bearing pads. Each of the bearing pads can be positioned closer to a periphery of the rotor than a center of the rotor. Each of the bearing define one or more passages configured to direct gas onto the rotor to control a position of the rotor along a first axis and a second axis that is substantially perpendicular to the first axis. Furthermore, one or more of the bearing pads define at least one additional passage configured to direct gas onto the rotor to control rotation of the rotor about the first axis.

A process chamber system adapted for both vacuum process steps and steps at pressures higher than atmospheric pressure. The chamber door may utilize a double door seal which allows for high vacuum in the gap between the seals such that the sealing force provided by the high vacuum in the seal gap is higher than the opposing forces due to the pressure inside the chamber and the weight of the components.

The present application provides a baking equipment applied in a display panel manufacturing process. In the present application, the first and second pipes are communicated with each other and evenly distributed inside the baking plate, so that the heating liquid injected from the head end of the first pipe heats the baking plate evenly during flowing through the first and second pipes, which improves the uniformity of the baking temperature of the TFT array substrate to be baked by the baking plate, thereby ensuring the stability of the baking process of the TFT array substrate.

In an embodiment, an apparatus comprising: a heater configured to heat a wafer located on a wafer staging area of the heater, the heater comprising a heater shaft extending below the wafer staging area; and a heater lift assembly comprising: a lift shaft configured to move the heater shaft in a vertical direction; a clamp that connects the heater shaft to the lift shaft; and a damper disposed on top of the clamp.

Provided is a semiconductor substrate manufacturing device which is capable of uniformly heating the surface of a semiconductor substrate that has a relatively large diameter or major axis. The semiconductor substrate manufacturing device includes a container body for accommodating a semiconductor substrate and a heating furnace that has a heating chamber which accommodates the container body, and the heating furnace has a heating source in a direction intersecting the semiconductor substrate to be disposed inside the heating chamber.

The disclosure relates to substrate processing apparatus, with a first and second reactor, each reactor configured for processing a plurality of substrates; and, a substrate handling robot constructed and arranged to transfer substrates between a substrate cassette at a substrate transfer position and the first and second reactor. The apparatus is constructed and arranged with a maintenance area between the first and second reactors to allow maintenance of the reactors from the maintenance area to both the first and second reactor.

The inventive concept relates to a substrate treating apparatus including a process chamber having a first and a second body, a support unit supporting a substrate, a heating unit heats the substrate, a driver moves any one of the first body and the second body, an interval state detection unit that detects an interval state between a side wall of the first body and a side wall of the second body when the first and the second body are placed in a process location, and a controller that controls the driver and the interval state detection unit, wherein the interval state detection unit includes a pressure provision line that provides a positive pressure or a negative pressure between the side wall of the first body and the side wall of the second body, and a pressure measurement member that measures a change in a pressure of the pressure provision line.

The present application provides a baking equipment applied in a display panel manufacturing process. In the present application, the first and second pipes are communicated with each other and evenly distributed inside the baking plate, so that the heating liquid injected from the head end of the first pipe heats the baking plate evenly during flowing through the first and second pipes, which improves the uniformity of the baking temperature of the TFT array substrate to be baked by the baking plate, thereby ensuring the stability of the baking process of the TFT array substrate.