A thermal processing apparatus according to the present invention includes: a support including quartz and being for supporting a substrate from a first side within a chamber; a flash lamp disposed on a second side and being for heating the substrate by irradiating the substrate with a flash of light; a continuous illumination lamp disposed on the second side of the substrate and being for continuously heating the substrate; a light blocking member disposed to surround the substrate in plan view; and a radiation thermometer disposed on the first side of the substrate and being for measuring a temperature of the substrate, wherein the radiation thermometer measures the temperature of the substrate by receiving light at a wavelength capable of being transmitted through the support. Accuracy of measurement of the temperature of the substrate can thereby be increased.

The disclosure relates to a flange for a process tube in an apparatus for processing substrates, e.g., a vertical furnace. The flange may be provided with an opening for in use giving access to the process chamber of the process tube and a cooling channel for allowing a cooling fluid to flow there through and cool the flange. A material with a heat conductivity between 0.1 and 40 W/m K may be at least partially provided in between the cooling fluid and the rest of the flange.

A press sintering process product carrier for carrying at least one product to be sintered in a press sintering process comprises a top side; a product receiving recess defined in the top side, and configured for receiving the product(s) therein and for carrying the product(s) on a recess bottom of the product receiving recess; a top side surface surrounding the product receiving recess; a holding groove provided in the top side surface and surrounding the product receiving recess, and a vacuum connection in fluid connection with the holding groove to allow providing a vacuum in the holding groove for holding a film, foil or sheet of material provided over the product receiving recess and the holding groove; and a recess gas inlet arranged in the product receiving recess for introducing a gas into the product receiving recess, and a recess gas outlet arranged in the product receiving recess for extracting gas from the product receiving recess to allow providing a flow of gas from the recess gas inlet to the recess gas outlet for purging the product receiving recess.

A process chamber includes one or more vertical walls at least partially defining a chamber portion of the process chamber, and multiple zones located about a periphery of the one or more vertical walls, wherein one or more of the multiple zones extends from a top to a bottom of the one or more vertical walls. The process chamber further includes a plurality of temperature control devices, each thermally coupled to the one or more vertical walls in one of the multiple zones, and a controller coupled to the plurality of temperature control devices and configured to set temperatures of one or more of the plurality of temperature control devices to obtain temperature uniformity within 2% across a substrate located in the chamber portion.

The inventive concept provides an apparatus for treating a substrate by using a supercritical fluid. In an embodiment, the apparatus may include a process chamber that provides a treatment space, and including a chamber heater that increases a temperature of an interior of the treatment space, a substrate support provided in the treatment space and that supports the substrate, and a substrate heating member that heats a lower surface of the substrate while contacting the lower surface of the substrate.

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

In an embodiment, an apparatus comprising: a heater configured to heat a wafer located on a wafer staging area of the heater, the heater comprising a heater shaft extending below the wafer staging area; and a heater lift assembly comprising: a lift shaft configured to move the heater shaft in a vertical direction; a clamp that connects the heater shaft to the lift shaft; and a damper disposed on top of the clamp.

A heater and/or cooler chamber includes a heat storage block or chunk. In the block a multitude of parallel, stacked slit pockets are each dimensioned to accommodate a single plate shaped workpiece. Workpiece handling openings of the slit pockets are freed and respectively covered by a door arrangement. The slit pockets are tailored to snugly surround the plate shaped workpieces therein so as to establish an efficient heat transfer between the heat storage block or chunk and the workpieces to be cooled or heated.

A method and system for doping semiconductor materials using microwave exposure. In some embodiments, the surface of a semiconductor substrate coated with a layer of dopant material is exposed to a beam of microwave radiation, with the frequency of the microwave radiation chosen to coincide with a microwave absorption resonance of the dopant. A gyrotron is a preferred source of monochromatic microwaves capable of delivering the appropriate the power density. Under this microwave exposure, the dopant heats up and diffuses into the semiconductor. Since only the dopant is selectively excited, the atoms of the crystal lattice remain cooler. Additional cooling can be provided by a flow of cooling gas onto the surface. When the electric field of the microwave exposure is high enough to overcome the potential barrier of interstitial diffusion within the crystal, the dopants migrate to vacancies in the crystal lattice, and the semiconductor material becomes activated.

A substrate processing apparatus includes: a heat processing unit configured to perform a heat process on a substrate having a film formed on the substrate; and a control unit configured to control the heat processing unit, wherein the heat processing unit comprises: a heater configured to support and heat the substrate; a chamber configured to cover the substrate supported on the heater; a gas ejector having a head in which ejection holes are formed, and configured to eject a gas from the ejection holes toward a surface of the substrate; an outer peripheral exhauster configured to evacuate a processing space inside the chamber from an outer peripheral region located further outward than a peripheral edge of the substrate supported on the heater; and a central exhauster configured to evacuate the processing space from a central region located further inward than the peripheral edge of the substrate supported on the heater.