Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. In one or more embodiments, a process chamber comprises a first window, a second window, a substrate support disposed between the first window and the second window, and a motorized rotatable radiant spot heating source disposed over the first window and configured to provide radiant energy through the first window.

A substrate processing apparatus, comprising a substrate support (32) provided with a support surface (34) for supporting a substrate or a substrate carrier (24) thereon and a support heater (50) constructed and arranged to heat the support surface (34). The apparatus comprises a heat shield constructed and arranged to cover and shield the substrate support (32) when no substrate or substrate carrier (24) is on the support surface.

An apparatus, a system and a method are disclosed. An exemplary method includes providing a wafer process chamber and a plurality of radiant heat elements under the wafer process chamber, receiving a wafer holder configured to be used in the wafer process chamber, and processing a wafer located on the wafer holder in the wafer process chamber. The wafer holder includes: a wafer contact portion including an upper surface and a lower surface, an exterior portion including an upper surface and a lower surface, and a tapered region formed in the wafer contact portion.

A plurality of flash lamps are disposed on an upper side of a chamber housing a semiconductor wafer and a plurality of LED lamps are disposed on a lower side thereof. A surface of a semiconductor wafer preheated by light irradiation from a plurality of LED lamps is irradiated with a flash of light from a flash lamp. The LED lamps emit light having a wavelength of 900 nm or less. The light radiated from the LED lamps passes through a quartz lower chamber window, and then emitted to the semiconductor wafer. The light with the wavelength of 900 nm or less radiated from the LED lamps is also favorably absorbed by the semiconductor wafer in a low temperature range of 500° C. or less, and is hardly absorbed by the quartz lower chamber window. Thus, the semiconductor wafer can be efficiently heated by the LED lamps.

A substrate processing apparatus includes: a rotary table provided in a processing container; a stage provided on the rotary table to place a substrate thereon, and configured to revolve by a rotation of the rotary table; a heater configured to heat the substrate placed on the stage; and a rotation shaft configured to rotate together with the rotary table and support the stage to be rotatable; and a deflector configured to deflect heating light emitted from the heater toward the rotation shaft.

In an embodiment, an apparatus comprising: a heater configured to heat a wafer located on a wafer staging area of the heater, the heater comprising a heater shaft extending below the wafer staging area; and a heater lift assembly comprising: a lift shaft configured to move the heater shaft in a vertical direction; a clamp that connects the heater shaft to the lift shaft; and a damper disposed on top of the clamp.

There is provided a technique capable of shortening a temperature stabilization time in a process chamber by improving a heat insulation performance of a lower portion of the process chamber. A heat insulation structure is arranged in a vicinity of a furnace opening of a heat treatment furnace wherein a temperature gradient is formed at the vicinity of the furnace opening. The heat insulation structure includes a plurality of heat insulation plates with predetermined gaps therebetween. Each heat insulation plate includes a heat shield made of metal; and a seal made of quartz or ceramics and configured to cover a front surface and a rear surface of the heat shield. The heat shield is arranged in a vacuum cavity provided in the seal.

A processing apparatus includes: a plurality of process modules concatenated with one another; and a loader module configured to receive a carrier accommodating a plurality of substrates to be processed by the plurality of process modules, wherein each of the plurality of process modules includes: a heat treatment unit including a processing container configured to accommodate the plurality of substrates and perform a heat treatment on the plurality of substrates; and a gas supply unit disposed on one side surface of the heat treatment unit and configured to supply a gas into the processing container.

Substrate treating equipment includes a first process chamber group including a plurality of process chambers, each of which includes a laser beam emitting unit that applies a laser beam to a substrate to heat the substrate, one laser beam generator that generates the laser beam applied to the substrate through the laser beam emitting unit of each of the plurality of process chambers included in the first process chamber group, and a beam shifting module including one or more mirrors corresponsable to the plurality of process chambers included in the first process chamber group. Each of the one or more mirrors is shifted to a position in which the mirror forms an optical path of the laser beam toward a predetermined one of the plurality of process chambers.

A process chamber includes one or more vertical walls at least partially defining a chamber portion of the process chamber, and multiple zones located about a periphery of the one or more vertical walls, wherein one or more of the multiple zones extends from a top to a bottom of the one or more vertical walls. The process chamber further includes a plurality of temperature control devices, each thermally coupled to the one or more vertical walls in one of the multiple zones, and a controller coupled to the plurality of temperature control devices and configured to set temperatures of one or more of the plurality of temperature control devices to obtain temperature uniformity within 2% across a substrate located in the chamber portion.