The object of the present invention is to improve production efficiency of lithium hydroxide anhydride in a method for producing lithium hydroxide anhydride from lithium hydroxide hydrate by using a rotary kiln. The method for producing lithium hydroxide anhydride comprises steps of: supplying the lithium hydroxide hydrate to a region between a heating part which is the part of the furnace core tube surrounded by the heating furnace and one end of the furnace core tube; delivering the supplied lithium hydroxide hydrate toward the other end of the furnace core tube; feeding a drying gas with a temperature of 100° C. or higher to the region between the one end and the heating part of the furnace core tube, when the lithium hydroxide hydrate is supplied; and heating and dehydrating the lithium hydroxide hydrate by the heating furnace which is set to 230-450° C. during the lithium hydroxide delivering step, to form lithium hydroxide anhydride.

The object of the present invention is to improve production efficiency of lithium hydroxide anhydride in a method for producing lithium hydroxide anhydride from lithium hydroxide hydrate by using a rotary kiln. The method for producing lithium hydroxide anhydride comprises steps of: supplying the lithium hydroxide hydrate to a region between a heating part which is the part of the furnace core tube surrounded by the heating furnace and one end of the furnace core tube; delivering the supplied lithium hydroxide hydrate toward the other end of the furnace core tube; feeding a drying gas with a temperature of 100° C. or higher to the region between the one end and the heating part of the furnace core tube, when the lithium hydroxide hydrate is supplied; and heating and dehydrating the lithium hydroxide hydrate by the heating furnace which is set to 230-450° C. during the lithium hydroxide delivering step, to form lithium hydroxide anhydride.

The disclosure relates to substrate processing apparatus, with a first and second reactor, each reactor configured for processing a plurality of substrates; and, a substrate handling robot constructed and arranged to transfer substrates between a substrate cassette at a substrate transfer position and the first and second reactor. The apparatus is constructed and arranged with a maintenance area between the first and second reactors to allow maintenance of the reactors from the maintenance area to both the first and second reactor.

The disclosure relates to substrate processing apparatus, with a first and second reactor, each reactor configured for processing a plurality of substrates; and, a substrate handling robot constructed and arranged to transfer substrates between a substrate cassette at a substrate transfer position and the first and second reactor. The apparatus is constructed and arranged with a maintenance area between the first and second reactors to allow maintenance of the reactors from the maintenance area to both the first and second reactor.

A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d.sub.1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d.sub.2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d.sub.1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d.sub.2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d.sub.1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d.sub.2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d.sub.1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d.sub.2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.

A nitriding apparatus for manufacturing a grain-oriented electrical steel sheet is provided. The nitriding apparatus includes: a nitriding gas supply pipe for introducing gas including at least ammonia or nitrogen; and a nitriding treatment portion for successively performing high-temperature nitriding and low-temperature nitriding in nitriding treatment. The nitriding treatment portion includes a high-temperature treatment portion for performing the high-temperature nitriding and a low-temperature treatment portion for performing the low-temperature nitriding, and the nitriding gas supply pipe to the high-temperature treatment portion includes a cooling device.

A gas ring is attached to an upper portion of a chamber side portion as a side wall of a chamber. The gas ring is formed by overlapping an upper ring and a lower ring. A gap between the upper ring and the lower ring provides a flow path for processing gas. A labyrinthine resisting unit is formed in the flow path. The mass of the lower ring having an inner wall surface is increased to increase heat capacity. The lower ring is attached to the chamber side portion to be in surface contact with the chamber side portion, so that thermal conductivity from the lower ring to the chamber side portion has a large value, and the amount of heat accumulated in the lower ring is reduced. An increase in temperature of the lower ring at thermal processing is thereby suppressed to prevent discoloration of the gas ring.