An apparatus includes a microwave source emitting energy in a frequency range of about 300 Mhz to about 300 Ghz. At microwave cavity includes a stationary input section, a stationary output section, and a rotating processing section between the input section and the sample output section. A waveguide introduces microwave energy into at least one of the sample input section and the sample output section.

A method for at least locally increasing the plasticity of a metal workpiece, which contains in particular an aluminum alloy, wherein the workpiece is irradiated in order to increase its temperature, and an associated production device, is provided. In order to be able to more quickly and thoroughly heat specific regions of a metal workpiece than other regions in a targeted manner, wherein it is possible to heat these regions more quickly and thoroughly with the same radiation output, while the surface of the workpiece remains largely unaffected, it is proposed that an absorbent be applied at least locally to the workpiece prior to irradiation thereof, wherein the degree of absorption of the absorbent for the radiation is greater than the degree of absorption of the workpiece for the radiation.

A method for at least locally increasing the plasticity of a metal workpiece, which contains in particular an aluminum alloy, wherein the workpiece is irradiated in order to increase its temperature, and an associated production device, is provided. In order to be able to more quickly and thoroughly heat specific regions of a metal workpiece than other regions in a targeted manner, wherein it is possible to heat these regions more quickly and thoroughly with the same radiation output, while the surface of the workpiece remains largely unaffected, it is proposed that an absorbent be applied at least locally to the workpiece prior to irradiation thereof, wherein the degree of absorption of the absorbent for the radiation is greater than the degree of absorption of the workpiece for the radiation.

A metal oxide barrier and a connecting method for solving the problems in which sectors of an existing cold crucible are connected by means of a mica plate and the mica plate is damaged due to arcing and the like and in which the sectors are strongly connected by means of the mica plate and thus are difficult to replace and maintain. A cold crucible, comprising a metal oxide barrier, according to the present invention can prevent arcing, enables reduction of damage on the edge part of a water cooling sector due to a molten material and thus enhances durability. Moreover, the metal oxide barrier can easily be replaced compared to an existing mica plate and thus enables easy maintenance and repair.

A metal oxide barrier and a connecting method for solving the problems in which sectors of an existing cold crucible are connected by means of a mica plate and the mica plate is damaged due to arcing and the like and in which the sectors are strongly connected by means of the mica plate and thus are difficult to replace and maintain. A cold crucible, comprising a metal oxide barrier, according to the present invention can prevent arcing, enables reduction of damage on the edge part of a water cooling sector due to a molten material and thus enhances durability. Moreover, the metal oxide barrier can easily be replaced compared to an existing mica plate and thus enables easy maintenance and repair.

A receiver is formed as the physical inverse or relief of at least a portion of a machined part or casting. The receiver has accommodations for sensor systems that monitor the temperature of the part during a radiant heating process which is placed on top of the casting receiver to move through the radiant heating process.

Certain embodiments of a melting and casting apparatus comprising includes a melting hearth; a refining hearth fluidly communicating with the melting hearth; a receiving receptacle fluidly communicating with the refining hearth, the receiving receptacle including a first outflow region defining a first molten material pathway, and a second outflow region defining a second molten material pathway; and at least one melting power source oriented to direct energy toward the receiving receptacle and regulate a direction of flow of molten material along the first molten material pathway and the second molten material pathway. Methods for casting a metallic material also are disclosed.

Certain embodiments of a melting and casting apparatus comprising includes a melting hearth; a refining hearth fluidly communicating with the melting hearth; a receiving receptacle fluidly communicating with the refining hearth, the receiving receptacle including a first outflow region defining a first molten material pathway, and a second outflow region defining a second molten material pathway; and at least one melting power source oriented to direct energy toward the receiving receptacle and regulate a direction of flow of molten material along the first molten material pathway and the second molten material pathway. Methods for casting a metallic material also are disclosed.

A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.

A semiconductor wafer held by a holding part in a chamber is irradiated and heated with halogen light emitted from a plurality of halogen lamps. A cylindrical louver and an annular light-shielding member, both made of opaque quartz, are provided between the halogen lamps and the semiconductor wafer. The outer diameter of the light-shielding member is smaller than the inner diameter of the louver. Light emitted from the halogen lamps and passing through a clearance between the inner wall surface of the louver and the outer circumference of the light-shielding member is applied to a peripheral portion of the semiconductor wafer where a temperature drop is likely to occur. On the other hand, light travelling toward an overheat region that has a higher temperature than the other region and appears in the surface of the semiconductor wafer when only a louver is installed is blocked off by the light-shielding member.