A component with a region to be cooled having a cooling channel which is arranged and designed so as to cool the region of the component during operation by a fluid flow, wherein the cooling channel is defined by a first channel side facing the region and by a second channel side facing away from the region. The first channel side forms a larger contact surface for the cooling channel than the second channel side. An additive manufacture process can produce the component.

The present disclosure relates to a thermal emissivity control system. The system may have a segmented array that makes use of a thermally conductive base layer configured to be connectable to an external heat generating subsystem, with the base layer including a thermally emissive surface. The array may also have a plurality of actuation elements at least one of positioned on or adjacent to the thermally emissive surface. A plurality of movable shutter elements is disposed adjacent one another in a grid pattern, and controlled in movement by the actuation elements to create gaps of controllably varying dimension therebetween. The shutter elements control at least one of a magnitude of, or direction of, thermal radiation through the gaps.

The present disclosure relates to a thermal emissivity control system. The system may have a segmented array that makes use of a thermally conductive base layer configured to be connectable to an external heat generating subsystem, with the base layer including a thermally emissive surface. The array may also have a plurality of actuation elements at least one of positioned on or adjacent to the thermally emissive surface. A plurality of movable shutter elements is disposed adjacent one another in a grid pattern, and controlled in movement by the actuation elements to create gaps of controllably varying dimension therebetween. The shutter elements control at least one of a magnitude of, or direction of, thermal radiation through the gaps.

A heat sink comprising a heat exchange device having a plurality of heat exchange elements each having a surface boundary with respect to a heat transfer fluid, having a fractal variation therebetween, wherein the heat transfer fluid is induced to flow with respect to the plurality of fractally varying heat exchange elements such that flow-induced vortices are generated at non-corresponding locations of the plurality of fractally varying heat exchange elements, resulting in a reduced resonance as compared to a corresponding heat exchange device having a plurality of heat exchange elements that produce flow-induced vortices at corresponding locations on the plurality of heat exchange elements.

An active vortex generator adapts to a flow rate of fluid through and/or a heat flux applied through a heat exchanger channel to improve the heat transfer rate of the heat exchanger. In some implementations, the movement of the active vortex generator may be induced by the fluid flow through the heat exchanger channel. In some implementations, the movement of the active vortex generator may be induced through an externally applied force on the active vortex generator. An actuated active vortex generator is particularly suited to heat exchangers with high heat flux dissipation requirements. Locating an actuated active vortex generator proximate to such high heat flux dissipation locations provides for improved heat transfer that can be activated when needed, such as upon operation of a high heat flux component.

The radiative cooling device includes an infrared radiative layer A that radiates infrared light IR from a radiative surface H, a light reflective layer B disposed on a side opposite to the radiative surface H with respect to the infrared radiative layer A, and a protective layer D disposed between the infrared radiative layer A and the light reflective layer B. The infrared radiative layer A is a resin material layer J having a thickness adjusted so as to emit a heat radiation energy greater than an absorbed solar energy in a wavelength range from 8 μm to 14 μm. The light reflective layer B contains silver or a silver alloy, and the protective layer D is formed from a polyolefin based resin with a thickness of 300 nm or more and 40 μm or less or an ethylene terephthalate resin with a thickness of 17 μm or more and 40 μm or less.

The radiative cooling device includes an infrared radiative layer A that radiates infrared light IR from a radiative surface H, a light reflective layer B disposed on a side opposite to the radiative surface H with respect to the infrared radiative layer A, and a protective layer D disposed between the infrared radiative layer A and the light reflective layer B. The infrared radiative layer A is a resin material layer J having a thickness adjusted so as to emit a heat radiation energy greater than an absorbed solar energy in a wavelength range from 8 μm to 14 μm. The light reflective layer B contains silver or a silver alloy, and the protective layer D is formed from a polyolefin based resin with a thickness of 300 nm or more and 40 μm or less or an ethylene terephthalate resin with a thickness of 17 μm or more and 40 μm or less.

A heat sink comprising a heat exchange device having a plurality of heat exchange elements each having a surface boundary with respect to a heat transfer fluid, having a fractal variation therebetween, wherein the heat transfer fluid is induced to flow with respect to the plurality of fractally varying heat exchange elements such that flow-induced vortices are generated at non-corresponding locations of the plurality of fractally varying heat exchange elements, resulting in a reduced resonance as compared to a corresponding heat exchange device having a plurality of heat exchange elements that produce flow-induced vortices at corresponding locations on the plurality of heat exchange elements.

A microprocessor assembly adapted for fluid cooling can include a semiconductor die mounted on a substrate. The semiconductor die can include an integrated circuit with a two-dimensional and/or three-dimensional circuit architecture. The assembly can include a heat sink module in thermal communication with the semiconductor die. The heat sink module can include an inlet port fluidly connected to an inlet chamber, a plurality of orifices fluidly connecting the inlet chamber to an outlet chamber, and an outlet port fluidly connected to the outlet chamber. When pressurized coolant is delivered to the inlet chamber, the plurality of orifices can provide jet streams of coolant into the outlet chamber and against a surface to be cooled to provide fluid cooling suitable to control a semiconductor die temperature during operation.

A microprocessor assembly adapted for fluid cooling can include a semiconductor die mounted on a substrate. The semiconductor die can include an integrated circuit with a two-dimensional and/or three-dimensional circuit architecture. The assembly can include a heat sink module in thermal communication with the semiconductor die. The heat sink module can include an inlet port fluidly connected to an inlet chamber, a plurality of orifices fluidly connecting the inlet chamber to an outlet chamber, and an outlet port fluidly connected to the outlet chamber. When pressurized coolant is delivered to the inlet chamber, the plurality of orifices can provide jet streams of coolant into the outlet chamber and against a surface to be cooled to provide fluid cooling suitable to control a semiconductor die temperature during operation.