An apparatus for forming a solar cell includes a housing defining a vacuum chamber, a rotatable substrate support, at least one inner heater and at least one outer heater. The substrate support is inside the vacuum chamber configured to hold a substrate. The at least one inner heater is between a center of the vacuum chamber and the substrate support, and is configured to heat a back surface of a substrate on the substrate support. The at least one outer heater is between an outer surface of the vacuum chamber and the substrate support, and is configured to heat a front surface of a substrate on the substrate support.

An apparatus for forming a solar cell includes a housing defining a vacuum chamber, a rotatable substrate support, at least one inner heater and at least one outer heater. The substrate support is inside the vacuum chamber configured to hold a substrate. The at least one inner heater is between a center of the vacuum chamber and the substrate support, and is configured to heat a back surface of a substrate on the substrate support. The at least one outer heater is between an outer surface of the vacuum chamber and the substrate support, and is configured to heat a front surface of a substrate on the substrate support.

A photodetector element for receiving radiated light from a surface of a semiconductor wafer loses a detection function because the intensity of the received light exceeds a detection limit while a flash lamp emits light. Measurement is not performed during the above-mentioned period, and the intensity of the radiated light from the surface of the semiconductor wafer is measured after the flash lamp stops emitting light and the photodetector element restores the detection function. Then, the temperature of the surface of the semiconductor wafer heated by irradiation with a flash of light is calculated based on the measured intensity of the radiated light. Accordingly, even in a case where intense irradiation is performed in an extremely short period of time, such as flash irradiation, the flash of light does not act as ambient light, which enables to obtain the surface temperature of the semiconductor wafer.

Disclosed is a heat treatment apparatus including: a heating unit that heats an inside of a processing chamber that accommodates a plurality of workpieces; a temperature drop rate model storing unit that stores a temperature drop rate model; and a heat treatment performing unit that sets the temperature drop rate model stored in the temperature drop model storing unit and sets the inside of the processing chamber to the temperature and the time represented in the temperature drop rate model. The temperature drop rate model storing unit stores a plurality of temperature drop rate models, each of which has a different temperature drop rate. The processing chamber is divided into a plurality of zones, and the temperature drop rate mode is set for each of the zones. The heat treatment performing unit sets different temperature drop rate models in a plurality of zones to heat the plurality of workpieces.

The invention relates to a sintering furnace (1) for components (15) made of a sintered material, in particular for dental components, comprising a furnace chamber (2) having a chamber volume (VK) and a chamber inner surface (OK), wherein a heat-up device (5), a receiving space (9) having a gross volume (VB) located in the chamber volume (VK) and delimited by the heat-up device (5), and a useful region (10) having a useful volume (VN) located in the gross volume (VB), are disposed in the furnace chamber (2). The furnace chamber (2) has an outer wall (3) consisting of a plurality of walls having a wall portion (7) to be opened for introduction into the receiving space (9) of a component to be sintered (15) and having an object volume (VO). In the furnace chamber (2) the heat-up device (5) has a thermal radiator (6) having a radiation field (13) which radiator is disposed on at least one side of the receiving space (9). Said thermal radiator (6) has a specific resistance of 0.1 mm.sup.2/m to 1,000,000 mm.sup.2/m and has a total surface, the maximum of which is three times the chamber inner surface (OK). With this sintering furnace (1) a heat-up temperature of at least 1100 C. can be achieved within 5 minutes at a maximum power input of 1.5 kW.

The invention relates to a sintering furnace (1) for components (15) made of a sintered material, in particular for dental components, comprising a furnace chamber (2) having a chamber volume (VK) and a chamber inner surface (OK), wherein a heat-up device (5), a receiving space (9) having a gross volume (VB) located in the chamber volume (VK) and delimited by the heat-up device (5), and a useful region (10) having a useful volume (VN) located in the gross volume (VB), are disposed in the furnace chamber (2). The furnace chamber (2) has an outer wall (3) consisting of a plurality of walls having a wall portion (7) to be opened for introduction into the receiving space (9) of a component to be sintered (15) and having an object volume (VO). In the furnace chamber (2) the heat-up device (5) has a thermal radiator (6) having a radiation field (13) which radiator is disposed on at least one side of the receiving space (9). Said thermal radiator (6) has a specific resistance of 0.1 mm.sup.2/m to 1,000,000 mm.sup.2/m and has a total surface, the maximum of which is three times the chamber inner surface (OK). With this sintering furnace (1) a heat-up temperature of at least 1100 C. can be achieved within 5 minutes at a maximum power input of 1.5 kW.

A system for heating substrates while being transported between processing chambers is disclosed. The system comprises an array of light emitting diodes (LEDs) disposed in the transfer chamber. The LEDs may be GaN LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. A controller is in communication with the LEDs. The LEDs may be independently controllable, so that the LEDs that are disposed above the substrate as it is moved from one processing chamber to another are illuminated. In other words, the illumination of the LEDs and the movements of the substrate handling robot may be synchronized by the controller.

A system for heating substrates while being transported between processing chambers is disclosed. The system comprises an array of light emitting diodes (LEDs) disposed in the transfer chamber. The LEDs may be GaN LEDs, which emit light at a wavelength which is readily absorbed by silicon, thus efficiently and quickly heating the substrate. A controller is in communication with the LEDs. The LEDs may be independently controllable, so that the LEDs that are disposed above the substrate as it is moved from one processing chamber to another are illuminated. In other words, the illumination of the LEDs and the movements of the substrate handling robot may be synchronized by the controller.

A vacuum heat treating furnace for the heat treatment of metal parts includes a pressure vessel and a hot zone enclosure that defines a hot zone therein. A heating element array inside the hot zone enclosure includes a first heating element, a second heating element, and a center heating element. The first and second heating elements are suspended on opposing sides of the hot zone enclosure. The center heating element is suspended vertically from the hot zone enclosure between the first and second heating elements. The center heating element is adapted to be connected to the first and second heating elements to form a continuous circuit therewith. The center heating element may be connected to the first and second heating elements with removable/reusable fasteners to provide for reconfiguration of the hot zone to accommodate different size workloads.

A vacuum heat treating furnace for the heat treatment of metal parts includes a pressure vessel and a hot zone enclosure that defines a hot zone therein. A heating element array inside the hot zone enclosure includes a first heating element, a second heating element, and a center heating element. The first and second heating elements are suspended on opposing sides of the hot zone enclosure. The center heating element is suspended vertically from the hot zone enclosure between the first and second heating elements. The center heating element is adapted to be connected to the first and second heating elements to form a continuous circuit therewith. The center heating element may be connected to the first and second heating elements with removable/reusable fasteners to provide for reconfiguration of the hot zone to accommodate different size workloads.