Provided is a hot isostatic pressing (HIP) device (1) that can efficiently cool a hot zone during HIP processing while restraining temperatures in the lower part of a high-pressure container. This HIP device (1) is provided with the following: gas-impermeable casings (3, 4) that surround an object to be processed (W); a heating unit (7) that is disposed inside these casings and forms a hot zone around the object to be processed (W); a high-pressure container (2); and a cooling unit that guides a pressure-medium gas cooled on the outside of the casings into the hot zone to cool the hot zone. The cooling unit comprises the following: a gas introduction unit that introduces the pressure-medium gas that has been cooled on the outside of the casings (3, 4) into the hot zone; and a cooling promotion unit (37) that cools the pressure medium gas by causing the pressure-medium gas that has been cooled on the outside of the casings to exchange heat with a base (11) of the high-pressure container (2).

Provided is a hot isostatic pressing (HIP) device (1) that can efficiently cool a hot zone during HIP processing while restraining temperatures in the lower part of a high-pressure container. This HIP device (1) is provided with the following: gas-impermeable casings (3, 4) that surround an object to be processed (W); a heating unit (7) that is disposed inside these casings and forms a hot zone around the object to be processed (W); a high-pressure container (2); and a cooling unit that guides a pressure-medium gas cooled on the outside of the casings into the hot zone to cool the hot zone. The cooling unit comprises the following: a gas introduction unit that introduces the pressure-medium gas that has been cooled on the outside of the casings (3, 4) into the hot zone; and a cooling promotion unit (37) that cools the pressure medium gas by causing the pressure-medium gas that has been cooled on the outside of the casings to exchange heat with a base (11) of the high-pressure container (2).

A thermochemical treatment installation includes a reaction chamber, at least one gas inlet, and a gas preheater chamber situated between the gas inlet and the reaction chamber. The preheater chamber has a plurality of perforated distribution trays held spaced apart one above another. The preheater chamber also includes, between at least the facing distribution trays, a plurality of walls defining flow paths for a gas stream between said trays.

A thermochemical treatment installation includes a reaction chamber, at least one gas inlet, and a gas preheater chamber situated between the gas inlet and the reaction chamber. The preheater chamber has a plurality of perforated distribution trays held spaced apart one above another. The preheater chamber also includes, between at least the facing distribution trays, a plurality of walls defining flow paths for a gas stream between said trays.

An apparatus 1 for processing a plurality of substrates 3 is provided. The apparatus may have a process tube 5 creating a process chamber 7; a heater 9 surrounding the process tube 5; a flange 11 for supporting the process tube; and a door 15 configured to support a wafer boat 17 with a plurality of substrates 3 in the process chamber and to seal the process chamber 7. An exhaust operably connected to the process chamber 7 may be provided to remove gas from the process chamber via a first exhaust duct 19. The apparatus may be provided with an extractor chamber 21 surrounding the first exhaust duct where it connects to the process chamber and connected to a second exhaust duct 23 to remove gas from the extractor chamber.

An apparatus 1 for processing a plurality of substrates 3 is provided. The apparatus may have a process tube 5 creating a process chamber 7; a heater 9 surrounding the process tube 5; a flange 11 for supporting the process tube; and a door 15 configured to support a wafer boat 17 with a plurality of substrates 3 in the process chamber and to seal the process chamber 7. An exhaust operably connected to the process chamber 7 may be provided to remove gas from the process chamber via a first exhaust duct 19. The apparatus may be provided with an extractor chamber 21 surrounding the first exhaust duct where it connects to the process chamber and connected to a second exhaust duct 23 to remove gas from the extractor chamber.

An apparatus for processing a substrate includes a reaction tube, a side cover, a heater, a first gas supplier, a second gas supplier and a controller. The reaction tube is configured to receive a substrate boat in which a plurality of the substrate is received to process the substrate. The side cover is configured to receive the reaction tube. The heater lines the interior of the side cover. The first gas supplier is provided to an upper portion of the side cover to supply a cooling gas at a first supplying rate to a space between the side cover and the reaction tube. The second gas supplier is provided to a lower portion of the side cover to supply the cooling gas at a second supplying rate different from the first supplying rate to the space between the side cover and the reaction tube. The controller controls the reaction tube.

An apparatus for processing a substrate includes a reaction tube, a side cover, a heater, a first gas supplier, a second gas supplier and a controller. The reaction tube is configured to receive a substrate boat in which a plurality of the substrate is received to process the substrate. The side cover is configured to receive the reaction tube. The heater lines the interior of the side cover. The first gas supplier is provided to an upper portion of the side cover to supply a cooling gas at a first supplying rate to a space between the side cover and the reaction tube. The second gas supplier is provided to a lower portion of the side cover to supply the cooling gas at a second supplying rate different from the first supplying rate to the space between the side cover and the reaction tube. The controller controls the reaction tube.

To provide a method of forming a positive electrode active material with high productivity. To provide a manufacturing apparatus capable of forming a positive electrode active material with high productivity. Provided is a method of forming a positive electrode active material including lithium, a transition metal, oxygen, and fluorine. An adhesion preventing step is performed during heating of an object. Examples of the adhesion preventing step include stirring by rotating a furnace during the heating, stirring by vibrating a container containing an object during the heating, and crushing performed between the plurality of heating steps. By these manufacturing methods, a positive electrode active material having favorable distribution of an additive at the surface portion can be formed.

The present disclosure includes a furnace for heating and/or sintering one or more three-dimensional printed metal parts. The furnace includes a furnace chamber, insulation within the furnace chamber, a retort within the furnace chamber, and one or more getters containing getter material. The retort is configured to receive the one or more three-dimensional printed metal parts.