Aspects of the present disclosure relation to systems, methods, and apparatus for correcting thermal processing of substrates. In one aspect, a corrective absorption factor curve having a plurality of corrective absorption factors is generated.

A substrate support assembly and processing chamber having the same are disclosed herein. In one embodiment, a substrate support assembly is provided that includes a body. The body has a center, an outer perimeter connecting a substrate support surface and a backside surface. The body additionally has a pocket disposed on the substrate support surface at the center and a lip disposed between the pocket and the outer perimeter. A layer is formed in the pocket of the substrate support surface. A plurality of discreet islands are disposed in the layer, wherein the discreet islands are disposed about a center line extending perpendicular from the substrate support surface.

There is provided a technique capable of stably form the film on a substrate regardless of machine difference or processing conditions. According to an aspect of the present disclosure, there is provided a technique that includes: (a) setting correction coefficients for correcting an output level of microwave; (b) storing correction tables containing the correction coefficients set in (a); (c) acquiring one or more correction coefficients from at least one correction table periodically from a start of outputting of the microwave; (d) calculating a correction value for an output preset level of the microwave from the one or more correction coefficients acquired in (c); (e) correcting the output preset level of the microwave by using the correction value calculated in (d); and (f) processing a substrate by supplying the microwave into a process chamber with the output preset level of the microwave corrected in (e).

A heat treatment apparatus includes a heating unit, a chamber, an exhaust unit, a partition unit and a switching unit. The heating unit supports and heats a substrate on which a film of a processing liquid is formed. The chamber surrounds the substrate supported by the heating unit. The exhaust unit is configured to discharge a gas from an inner space of the chamber through a discharge opening located near the heating unit. The partition unit is configured to partition the inner space of the chamber into a first space where the substrate on the heating unit is exposed and a second space located above the first space. The switching unit is configured to switch between a first state where the gas is discharged by the exhaust unit through the first space and a second state where the gas is discharged by the exhaust unit through the second space.

A reactive heat treatment apparatus is provided to treat a thin-film device. The reactive heat treatment apparatus includes a furnace pipe. The furnace pipe extends in a direction and has a first end and a second end. The furnace pipe further includes a high-temperature portion, a low-temperature portion, and a furnace door. The high-temperature portion is disposed close to the second end and configured to receive the thin-film device. The low-temperature portion is disposed close to the first end and provided with an airtight configuration. The furnace door is disposed close to the first end. An inner side wall of the low-temperature portion has a sunken portion. A height differential is formed between the sunken portion and an inner side wall of the high-temperature portion.

Provided is a high pressure heat treatment apparatus including: an internal chamber accommodating an object to be heat-treated; an external chamber including a high-temperature zone accommodating the internal chamber and a low-temperature zone having a lower temperature than the high-temperature zone; a gas supply module including a process gas line for supplying a process gas for the heat treatment to the internal chamber at a first pressure higher than that of the atmosphere and a protective gas line for supplying a protective gas to the external chamber at a second pressure set in relation to the first pressure; a switch module configured to switch the high-temperature zone and the low-temperature zone into a communication state; and a purge module configured to purge the protective gas in the high-temperature zone to the low-temperature zone in the communication state.

Disclosed is a magnetic annealing apparatus including a processing container that performs a magnetic annealing processing on a plurality of substrates accommodated therein in a magnetic field; a substrate holder that holds the plurality of substrates substantially horizontally in the processing container; a division heater including a plurality of sub-division heaters and covering a substantially entire circumferential surface of an outer periphery of a predetermined region of the processing container along a longitudinal direction; a magnet installed to cover an outside of the division heater; and a controller configured to feedback-control a temperature of a predetermined control target heater among the plurality of sub-division heaters, and to control temperatures of the plurality of sub-division heaters other than the predetermined control target heater based on a control output obtained by multiplying a control output of the predetermined control target heater and a predetermined ratio.

A batch processing oven comprising a processing chamber and a rack configured to be positioned in the processing chamber. The rack is configured to support a plurality of substrates and a plurality of panels in a stacked manner such that one or more substrates of the plurality of substrates are positioned between at least one pair of adjacent panels of the plurality panels. Vertical gaps separate each substrate of the one or more substrates from an adjacent substrate or panel on either side of the substrate.

Provided is a heat treatment apparatus, which includes: a cylindrical quartz reaction tube having a furnace opening and a bottom flange at a lower portion thereof; a flange holding part configured to hold the bottom flange of the reaction tube; and a lid including a metal lid and a quartz lid supported by the metal lid, the quartz lid being configured to close the furnace opening of the reaction tube. The quartz lid is fixed onto the metal lid by a support ring. The support ring is brought into contact with a bottom surface of the flange holding part so that a gap is defined between the quartz lid and the bottom flange. A sealing member is arranged outward from the gap in a radial direction.

The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.