A semiconductor burn-in oven includes a housing including a burn-in chamber and an opening to the burn-in chamber surrounded by a front face, a heating device, testing circuitry, a door and a sealing mechanism. The door has an open position, in which the burn-in chamber is accessible through the opening, and a closed position, in which the door covers the opening. The sealing mechanism is configured to form a seal around the opening between an interior side of the door and the front face when the door is in the closed position. The sealing mechanism includes at least one sealing member having a recessed position, in which a gap extends between the front face and the interior side of the door, and a sealing position, in which the at least one sealing member closes the gap and forms the seal.

A wafer baking apparatus includes a chamber including a processing space, and a wafer heater disposed in the processing space and configured to support a wafer. The wafer heater includes a first heating plate, a heating resistance pattern disposed on a lower surface of the first heating plate, a second heating plate disposed on the first heating plate, and a heat dispersion layer interposed between the first and second heating plates and having thermal conductivity lower than a thermal conductivity of materials of the first and second heating plates.

First irradiation which causes an emission output from a flash lamp to reach its maximum value over a time period in the range of 1 to 20 milliseconds is performed to increase the temperature of a front surface of a semiconductor wafer from a preheating temperature to a target temperature for a time period in the range of 1 to 20 milliseconds. This achieves the activation of the impurities. Subsequently, second irradiation which gradually decreases the emission output from the maximum value over a time period in the range of 3 to 50 milliseconds is performed to maintain the temperature of the front surface within a ±25° C. range around the target temperature for a time period in the range of 3 to 50 milliseconds. This prevents the occurrence of process-induced damage while suppressing the diffusion of the impurities.

The present disclosure provides a support mechanism for supporting a cover that performs sealing of a furnace opening of a heat treatment furnace or release the sealing by being moved up or down by an elevating unit. The support mechanism includes a first elastic body having a first elastic modulus; and a second elastic body having a second elastic modulus larger than the first elastic modulus. A reaction force in relation to the first elastic body is applied to the cover when the cover abuts on the furnace opening by being moved up by the elevating unit, and a reaction force in relation to the first elastic body and the second elastic body is applied to the cover after the cover abuts on the furnace opening by being moved up by the elevating unit.

Disclosed is a vertical heat treatment apparatus. The apparatus includes: a heat treatment furnace provided with a furnace inlet at a lower end thereof; a cover unit disposed on the furnace inlet of the heat treatment furnace; a cover unit opening/closing mechanism configured to support the cover unit in a cantilever manner from a bottom side of the cover unit; and an auxiliary mechanism configured to press the cover unit from the bottom side of the cover unit when the cover unit is disposed on the furnace inlet. The auxiliary mechanism is provided with a toggle mechanism.

Apparatus, systems, and methods for processing workpieces are provided. In one example, such a method for performing a spike anneal rapid thermal process may include controlling a heat source to begin heating a workpiece supported on a workpiece support in a processing chamber. The method may further include receiving data indicative of a temperature of the workpiece. Furthermore, the method may include monitoring the temperature of the workpiece relative to a temperature setpoint. Moreover, the method may include controlling the heat source to stop heating the workpiece based at least in part on the workpiece reaching the temperature setpoint. Additionally, the method may include controlling a cooling system to begin flowing a cooling gas at a rate of about 300 slm or greater over the workpiece based at least in part on the workpiece reaching the temperature setpoint to reduce a t50 peak width of the workpiece.

Apparatus, systems, and methods for processing workpieces are provided. In one example, such a method for performing a spike anneal rapid thermal process may include controlling a heat source to begin heating a workpiece supported on a workpiece support in a processing chamber. The method may further include receiving data indicative of a temperature of the workpiece. Furthermore, the method may include monitoring the temperature of the workpiece relative to a temperature setpoint. Moreover, the method may include controlling the heat source to stop heating the workpiece based at least in part on the workpiece reaching the temperature setpoint. Additionally, the method may include controlling a cooling system to begin flowing a cooling gas at a rate of about 300 slm or greater over the workpiece based at least in part on the workpiece reaching the temperature setpoint to reduce a t50 peak width of the workpiece.

Systems and methods for gas flow in a thermal processing system are provided. In some example implementations a gas flow pattern inside the process chamber of a millisecond anneal system can be improved by implementing one or more of the following: (1) altering the direction, size, position, shape and arrangement of the gas injection inlet nozzles, or a combination hereof; (2) use of gas channels in a wafer plane plate connecting the upper chamber with the lower chamber of a millisecond anneal system; and/or (3) decreasing the effective volume of the processing chamber using a liner plate disposed above the semiconductor substrate.

Provide a converging mirror-based furnace for heating a target by way of reflecting from a reflecting mirror unit the light emitted from a light source and then irradiating a target with the reflected light, wherein said target-heating converging-light furnace is such that: the reflecting mirror unit comprises a primary reflecting mirror and secondary reflecting mirror; the light emitted from the light source is reflected sequentially by the primary reflecting mirror and secondary reflecting mirror and then irradiated onto the target; and the light reflected by the secondary reflecting mirror and irradiated onto the target surface is not perpendicular to the target surface. Based on the above, a system that uses converged infrared light to provide heating can be made smaller while keeping its heating performance intact, even when the system uses a revolving ellipsoid.

A control unit can select a large-number control zone model in which the number of control zones, which are independently controlled, is large, and a small-number control zone model in which the number of control zones, which are independently controlled, is small. When a temperature is increased or decreased, the control unit can select the small-number control zone model so as to control, based on signals from temperature sensors of the respective control zones C1 . . . C5 whose number is small, heaters located on the respective control zones C1 . . . C5. When a temperature is stabilized, the control unit can select the large-number control zone model so as to control, based on signals signals from the temperature sensors of the respective control zones C1 . . . C10 whose number is large, the heaters located on the respective control zones C1 . . . C10.