An apparatus for treating a disc-shaped article comprises a spin chuck and at least three individually controllable infrared heating elements. The infrared heating elements are mounted in a stationary manner with respect to rotation of said spin chuck. The infrared heating elements are arranged in a nested configuration so as to define individually controllable inner, middle and outer heating zones adjacent a disc-shaped article when positioned on the spin chuck.

Each of substrates which are sequentially loaded into an apparatus is transferred to one of empty (available) cooling units, and the cooling unit is reserved as a unit to be used for performing a cooling treatment after a post-exposure bake process for the substrate and the reservation information is stored. After one of the cooling units is reserved in advance before the post-exposure bake process, the substrate is transferred from the cooling unit to one of heating units without being subjected to a cooling treatment and is subjected to a post-exposure bake process therein. After the post-exposure bake process, the substrate is transferred from the heating unit to the reserved cooling unit which is reserved in advance and subjected to a cooling treatment therein.

A heat treatment apparatus according to one aspect of the present disclosure includes a vertically long process chamber, a heater configured to heat the process chamber, and a cooler configured to cool the process chamber. The cooler includes a plurality of discharge holes provided at intervals along a longitudinal direction of the process chamber to discharge cooling fluid toward the process chamber and a plurality of shutters provided corresponding to the plurality of discharge holes. At least one of the plurality of shutters is configured to move to an open position independently of other shutters.

Embodiments of methods and apparatus for correcting substrate deformity are provided herein. In some embodiments, a substrate flattening system includes: a first process chamber having a first substrate support and a first showerhead, wherein the first substrate support does not include a chucking mechanism; a first heater disposed in the first substrate support to heat a substrate placed on a first support surface of the first substrate support; a second heater configured to heat a process gas flowing through the first showerhead into a first processing volume of the first process chamber; and a second process chamber having a second substrate support, wherein the second substrate support is not heated, and wherein the first process chamber and the cooling chamber are both non-vacuum chambers.

A heating chamber and a semiconductor processing apparatus are provided. The heating chamber includes: a heating barrel (17) disposed in the heating chamber and located above a substrate transferring window; an annular heating device (15) disposed around an inner side of the heating barrel and configured to radiate heat from a periphery to an interior of the heating barrel; a substrate cassette (14) configured to bear multiple layers of substrates and allow the multiple, layers of substrates to be arranged at intervals in an axial direction of the heating barrel; and a substrate cassette lifting device (13) configured to drive the substrate cassette to move up into an internal spare defined by the annular heating device, or move down to a position corresponding to the substrate transferring window.

The present disclosure relates to a device and a method for baking a substrate. The device includes a hot plate, and a supporting member for supporting a substrate to be processed, wherein the supporting member is located between the hot plate and the substrate to be processed, and can move relative to the hot plate so as to adjust the contacting position of the supporting member with the substrate to be processed. With the device, the yield of the substrate can be increased.

A heat treatment apparatus includes: a reaction tube processing a plurality of substrates; a support member supporting the reaction tube; a flange protruding outwardly from a lower end of the reaction tube: a concave portion formed in an outer periphery of the flange; and a rotatable roller installed in a top surface of the support member. The rotatable roller engages the concave portion and positions the reaction tube in a circumferential direction.

According to one aspect of the technique, there is provided a method of manufacturing a semiconductor device, including: (a) heating a heat insulating plate in a substrate retainer to a processing temperature by an electromagnetic wave, and measuring a temperature change of the heat insulating plate by a non-contact type thermometer until the processing temperature; (b) heating a test object provided with a chip that does not transmit a detection light of the thermometer and accommodated in the substrate retainer to the processing temperature, and measuring a temperature change of the chip by the thermometer until the processing temperature; (c) acquiring a correlation between the temperature change of the heat insulating plate and that of the chip based on measurement results; and (d) controlling a heater to heat the substrate based on the correlation and the temperature of the heat insulating plate measured by the thermometer.

A method includes supporting a wafer on a heating element, wherein the heating element is located in a baking chamber. The method further includes heating the wafer for a first duration using the heating element. The method further includes measuring a temperature of the heating element and a temperature of the wafer during the first duration to obtain temperature information. The method further includes adjusting an amount of heat provided by the heating element during the first duration, wherein the adjusting of the amount of heat includes decreasing the amount of heat provided by the heating element as a rate of change of the temperature information versus time increases.

Methods and systems for providing a short-duration anneal are provided. In one example, the methods and systems can include placing a workpiece in a thermal processing chamber. The workpiece can include a device side surface and an opposing non-device side surface. The methods and systems can include delivering an energy pulse from at least one heat source to the non-device side surface of the workpiece. In another example, the methods and systems can include depositing a layer of semiconductor material onto the semiconductor workpiece at the device side of the semiconductor workpiece. The methods and systems can include doping the layer of semiconductor material with a doping species and annealing the layer for crystallization using solid phase epitaxy.