An advanced monitoring device and an implementation method for a whole-process deformation curve of a surrounding rock during tunnel excavation is disclosed, comprising a steel pipe elastic body, a cathetometer structure and an embedded optical fiber, and an implementation step; the cathetometer is an equidistant series structure, and fixed in the steel pipe; the embedded optical fiber is encapsulated in the surface slot of the steel pipe; the cathetometer and the embedded optical fiber and the steel pipe form a deformation coordination structure, and the deformation of the surrounding rock can be deduced by calculating the variation of the cathetometer and the deformation of the optical fiber. The invention can test and calculate the deformation curve of the surrounding rock in front of the excavation face during tunnel excavation, and provide support for engineering dynamic design, construction and safety.

An advanced monitoring device and an implementation method for a whole-process deformation curve of a surrounding rock during tunnel excavation is disclosed, comprising a steel pipe elastic body, a cathetometer structure and an embedded optical fiber, and an implementation step; the cathetometer is an equidistant series structure, and fixed in the steel pipe; the embedded optical fiber is encapsulated in the surface slot of the steel pipe; the cathetometer and the embedded optical fiber and the steel pipe form a deformation coordination structure, and the deformation of the surrounding rock can be deduced by calculating the variation of the cathetometer and the deformation of the optical fiber. The invention can test and calculate the deformation curve of the surrounding rock in front of the excavation face during tunnel excavation, and provide support for engineering dynamic design, construction and safety.

Surface measuring apparatus for measuring a surface of a workpiece has a probe for contacting the surface of workpiece, a feed apparatus for moving probe relative to surface of the workpiece along a feed axis for sampling surface of workpiece. The probe outputs a probe output signal during sampling of the workpiece. An evaluation apparatus is in data transmission connection with probe and is designed and programmed to reconstruct the profile of the surface of workpiece based on the probe output signal. Evaluation apparatus is designed and programmed to determine an apparatus frequency signature representing characteristic natural frequencies of the surface measuring apparatus, and an analyzer is provided which detects and analyzes the temporal course of the apparatus frequency signature, such that the functional state of the surface measuring apparatus is assessed based on the temporal course of the apparatus frequency signature.

Surface measuring apparatus for measuring a surface of a workpiece has a probe for contacting the surface of workpiece, a feed apparatus for moving probe relative to surface of the workpiece along a feed axis for sampling surface of workpiece. The probe outputs a probe output signal during sampling of the workpiece. An evaluation apparatus is in data transmission connection with probe and is designed and programmed to reconstruct the profile of the surface of workpiece based on the probe output signal. Evaluation apparatus is designed and programmed to determine an apparatus frequency signature representing characteristic natural frequencies of the surface measuring apparatus, and an analyzer is provided which detects and analyzes the temporal course of the apparatus frequency signature, such that the functional state of the surface measuring apparatus is assessed based on the temporal course of the apparatus frequency signature.

An optimized measurement model is determined based a model of parameter variations across a semiconductor wafer. A global, cross-wafer model characterizes a structural parameter as a function of location on the wafer. A measurement model is optimized by constraining the measurement model with the cross-wafer model of process variations. In some examples, the cross-wafer model is itself a parameterized model. However, the cross-wafer model characterizes the values of a structural parameter at any location on the wafer with far fewer parameters than a measurement model that treats the structural parameter as unknown at every location. In some examples, the cross-wafer model gives rise to constraints among unknown structural parameter values based on location on the wafer. In one example, the cross-wafer model relates the values of structural parameters associated with groups of measurement sites based on their location on the wafer.

A method for analyzing the condition of a machine, and an apparatus for analyzing the condition of a machine are described.

The invention relates to a device configured to determine and/or render information representative of roughness of a first surface of an object, the device comprising means for measuring a first pressure applied by at least a part of a hand on said device, sticky means configured to be in contact with the first surface and means for measuring a speed of the device.

The invention relates to a device configured to determine and/or render information representative of roughness of a first surface of an object, the device comprising means for measuring a first pressure applied by at least a part of a hand on said device, sticky means configured to be in contact with the first surface and means for measuring a speed of the device.

A measurement apparatus includes a horizontal plate. The horizontal plate includes a first plate end, a second plate end disposed away from the first plate end in a longitudinal direction, a first plate surface extending between the first plate end and the second plate end, and a second plate surface extending between the first plate end and the second plate end. The second plate surface is disposed away from the first plate surface in a normal direction. A first support member extends from the first plate end longitudinally toward the second plate end and protrudes in a direction normally away from the second plate surface. A second support member extends from the first plate end longitudinally toward the second plate end and protrudes in a direction normally away from the second plate surface. A measurement bar contacts the first support member and the second support member.

A measurement apparatus includes a horizontal plate. The horizontal plate includes a first plate end, a second plate end disposed away from the first plate end in a longitudinal direction, a first plate surface extending between the first plate end and the second plate end, and a second plate surface extending between the first plate end and the second plate end. The second plate surface is disposed away from the first plate surface in a normal direction. A first support member extends from the first plate end longitudinally toward the second plate end and protrudes in a direction normally away from the second plate surface. A second support member extends from the first plate end longitudinally toward the second plate end and protrudes in a direction normally away from the second plate surface. A measurement bar contacts the first support member and the second support member.