An optical system configured to measure a raised or receded surface feature on a surface of a sample may comprise a broadband light source; a tunable filter configured to filter broadband light emitted from the broadband light source and to generate a first light beam at a selected wavelength; a linewidth control element configured to receive the first light beam and to generate a second light beam having a predefined linewidth and a predetermined coherence length; collimating optics optically coupled to the second light beam and configured to collimate the second light beam; collinearizing optics optically coupled to the collimating optics and configured to align the collimated second light beam onto the raised or receded surface feature of the sample, and a processor system and at least one digital imager configured to measure a height of the raised surface or depth of the receded surface from light reflected at least from those surfaces.

An analysis apparatus includes an acquisition part that acquires a plurality of interference images based on lights having a plurality of different wavelengths from an interference measurement apparatus, a removing part that outputs an interference component by removing a non-interference component included in an interference signal for each pixel in the plurality of the interference images, a conversion part that generates an analysis signal by performing a Hilbert transformation on the interference component, and a calculation part that calculates a distance between a reference surface and a surface of an object to be measured by specifying a phase gradient of a wavelength of light radiated onto the reference surface and the surface of the object to be measured on the basis of the interference component and the analysis signal.

Methods and systems for measuring the orientation of a wafer at or near an X-ray scatterometry measurement location are described herein. In one aspect, an X-ray scatterometry based metrology system includes a wafer orientation measurement system that measures wafer orientation based on a single measurement without intervening stage moves. In some embodiments, an orientation measurement spot is coincident with an X-ray measurement spot. In some embodiments, an X-ray scatterometry measurement and a wafer orientation measurement are performed simultaneously. In another aspect, signals detected by a wafer orientation measurement system are filtered temporally, spatially, or both, to improve tracking. In another aspect, a wafer orientation measurement system is calibrated to identify the orientation of the wafer with respect to an incident X-ray beam. In another aspect, a wafer under measurement is positioned based on the measured orientation in a closed loop or open loop manner.

A metrology system may include an imaging sub-system to image a metrology target buried in a sample, where the sample is formed from bonded first and second substrates with a metrology target at the interface. The metrology system may further include an illumination sub-system with an illumination field stop and an illumination pupil, where the illumination field stop includes an aperture to provide that a projected size of the field-stop aperture on a measurement plane corresponding to the metrology target matches a field of view of the detector at the measurement plane, and where the illumination pupil includes a central obscuration to provide oblique illumination of the metrology target with angles greater than a cutoff angle selected to prevent illumination from the illumination source from reflecting off of the bottom surface of the sample and through the field of view of the detector at the measurement plane.

Methods for processing data from a metrology process and for obtaining calibration data are disclosed. In one arrangement, measurement data is obtained from a metrology process. The metrology process includes illuminating a target on a substrate with measurement radiation and detecting radiation redirected by the target. The measurement data includes at least a component of a detected pupil representation of an optical characteristic of the redirected radiation in a pupil plane. The method further includes analyzing the at least a component of the detected pupil representation to determine either or both of a position property and a focus property of a radiation spot of the measurement radiation relative to the target.

A depth measurement apparatus including an illumination module, a beam splitter, an objective lens, an image capture module, a controller and a processor is provided. The illumination module is configured to generate an illumination beam. The beam splitter and the objective lens are disposed on an optical path of the illumination beam, and the object lens is configured to focus the illumination beam into a hole formed in an object. The image capture module is configured to capture images of the hole at different heights. The controller is coupled to the illumination module and the image capture module. The processor is coupled to the controller and the image capture module, and configured to perform focus distance evaluations on the images captured by the image capture module to obtain a height difference between two surfaces of the object. A depth measurement method is also provided.

Systems and methods are disclosed for using second-harmonic generation of light to monitor the manufacturing process for changes that can affect the performance or yield of produced devices and/or determining critical dimensions of the produced device.

Disclosed herein is a method for depth-profiling of samples including a target region including a lateral structural feature. The method includes projecting an optical pump pulse on a semiconductor device comprising a target region, such as to produce an acoustic pulse which propagates within the target region of the semiconductor device, wherein a wavelength of the pump pulse is at least two times greater than a lateral extent of a lateral structural feature of the semiconductor device along at least one lateral direction, projecting an optical probe pulse on the semiconductor device, such that the probe pulse undergoes Brillouin scattering off the acoustic pulse within the target region, detecting a scattered component of the probe pulse to obtain a measured signal, and analyzing the measured signal to obtain a depth-dependence of at least one parameter characterizing the lateral structural feature.

Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

A measurement apparatus and a measurement method capable of speedily and accurately measuring an edge shape are provided. A measurement apparatus according to an aspect of the present disclosure includes an objective lens positioned so that its focal plane cuts across an edge part of a substrate, a detector including a plurality of pixels and configured to detect a reflected light from the edge part of the substrate through a confocal optical system, an optical head in which the objective lens and the detector are disposed, a moving mechanism configured to change a relative position of the optical head with respect to the substrate so that an inclination of the focal plane with respect to the substrate is changed, and a processing unit configured to measure a shape of the edge part.