A polarization and color sensitive pixel device and a focal plane array made therefrom. Each incorporates a thick color/polarization filter stack and microlens array for visible (0.4-0.75 micron), near infrared (0.75-3 micron), mid infrared (3-8 micron) and long wave infrared (8-15 micron) imaging. A thick pixel filter has a thickness of between about one to 10? the operational wavelength, while a thick focal plane array filter is on the order of or larger than the size or up to 10? the pitch of the pixels in the focal plane array. The optical filters can be precisely fabricated on a wafer. A filter array can be mounted directly on top of an image sensor to create a polarization camera. Alternatively, the optical filters can be fabricated directly on the image sensor.

This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source.

A self-contained metrology wafer carrier systems and methods of measuring one or more characteristics of semiconductor wafers are provided. A wafer carrier system includes, for instance, a housing configured for transport within the automated material handling system, the housing having a support configured to support a semiconductor wafer in the housing, and a metrology system disposed within the housing, the metrology system operable to measure at least one characteristic of the wafer, the metrology system comprising a sensing unit and a computing unit operably connected to the sensing unit. Also provided are methods of measuring one or more characteristics of a semiconductor wafer within the wafer carrier systems of the present disclosure.

A sensor to detect information on a subject by using an electromagnetic wave includes a transmitting unit having a generating element and a first antenna, a polarization converting unit, and a receiving unit having a second antenna and a detecting device. The generating element generates an electromagnetic wave, and the first antenna emits the electromagnetic wave generated by the generating element as first polarization. The polarization converting unit converts the first polarization into second polarization by changing a polarization direction of the first polarization. The second antenna receives the second polarization, and the detecting device detects the electromagnetic wave received by the second antenna. The transmitting unit and the receiving unit are disposed on the same substrate.

This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source.

Summary: The invention relates to a temperature sensor, full-A magnetic element (3) that has at least one magnetic Layer (1), its magnetic properties depend on the temperature characterized in thatThe magnetic layer (1) has a vortex-shaped magnetization distribution with a magnetic vortex core (2) has, wherein the vortex-shaped magnetization distribution is formed in a layer plane and the vortex core (2) is formed perpendicular to the layer plane,An excitation unit (15) which is used to excite the vortex-shaped Magnetization distribution to a gyrotropic magnetization motion is provided,A detection unit (16) for detecting a resonance frequency the gyrotropic magnetization movement is provided andAn evaluation unit (19) for determining a temperature from the resonance frequency of the gyrotropic magnetization movement is provided.

Summary: The invention relates to a temperature sensor, full-A magnetic element (3) that has at least one magnetic Layer (1), its magnetic properties depend on the temperature characterized in thatThe magnetic layer (1) has a vortex-shaped magnetization distribution with a magnetic vortex core (2) has, wherein the vortex-shaped magnetization distribution is formed in a layer plane and the vortex core (2) is formed perpendicular to the layer plane,An excitation unit (15) which is used to excite the vortex-shaped Magnetization distribution to a gyrotropic magnetization motion is provided,A detection unit (16) for detecting a resonance frequency the gyrotropic magnetization movement is provided andAn evaluation unit (19) for determining a temperature from the resonance frequency of the gyrotropic magnetization movement is provided.

A short wave infrared polarimeter comprising a pixelated polarizer array and an Indium-Gallium-Arsenide (InGaAs) focal plane array. The short wave infrared polarimeter optionally includes a micro-lens array and/or an aperture layer.

A self-contained metrology wafer carrier systems and methods of measuring one or more characteristics of semiconductor wafers are provided. A wafer carrier system includes, for instance, a housing configured for transport within the automated material handling system, the housing having a support configured to support a semiconductor wafer in the housing, and a metrology system disposed within the housing, the metrology system operable to measure at least one characteristic of the wafer, the metrology system comprising a sensing unit and a computing unit operably connected to the sensing unit. Also provided are methods of measuring one or more characteristics of a semiconductor wafer within the wafer carrier systems of the present disclosure.

A testing apparatus may include a stand having an aperture and a platform adjacent to the aperture, a clamp adjacent to the platform and configured to hold a coupon, and an actuator within the aperture. The actuator is configured to impart a first force on the platform and the coupon at a specified frequency. The testing apparatus may also include a displacement sensor adjacent to the stand and configured to measure a displacement of the coupon and circuitry connected to the actuator and the displacement sensor with the circuitry configured to collect data from the actuator and the displacement sensor.