A flip chip circuit comprising: a semiconductor substrate; a power amplifier provided on the semiconductor substrate; and a metal pad configured to receive an electrically conductive bump for connecting the flip chip to external circuitry. At least a portion of the power amplifier is positioned directly between the metal pad and the semiconductor substrate.

A method can include, in response to a power supply voltage transition, setting a temperature window to a first temperature range by operation of a temperature circuit formed on a semiconductor device. In response to a temperature of the semiconductor device being determined to be outside of the first temperature range, changing the temperature range of the temperature window until the temperature of the semiconductor device is determined to be within the temperature window.

A method can include, in response to a power supply voltage transition, setting a temperature window to a first temperature range by operation of a temperature circuit formed on a semiconductor device. In response to a temperature of the semiconductor device being determined to be outside of the first temperature range, changing the temperature range of the temperature window until the temperature of the semiconductor device is determined to be within the temperature window.

A sensor element for a cutting tool has a hard portion having a first sensing surface, first and second electrodes, and first and second sets of thermocouple wires, and an electrically insulating portion. The second electrode has a second sensing surface, The hard portion comprises hard and/or super-hard material and the first and second electrodes comprise electrically conductive hard and/or super-hard material, the hard portion isolating the first sensing surface from the second sensing surface. The second electrode is attached to or forms part of an electrically conductive region of the hard portion or a region attached thereto. Electric current flows between the first and second electrodes through external material when the sensing surfaces contact the material in response to the cutting tool engaging the material. The first and second electrodes are operable to indicate any one or more of a temperature of the first and second electrodes, and conductivity between the electrodes.

A sensor element for a cutting tool has a hard portion having a first sensing surface, first and second electrodes, and first and second sets of thermocouple wires, and an electrically insulating portion. The second electrode has a second sensing surface, The hard portion comprises hard and/or super-hard material and the first and second electrodes comprise electrically conductive hard and/or super-hard material, the hard portion isolating the first sensing surface from the second sensing surface. The second electrode is attached to or forms part of an electrically conductive region of the hard portion or a region attached thereto. Electric current flows between the first and second electrodes through external material when the sensing surfaces contact the material in response to the cutting tool engaging the material. The first and second electrodes are operable to indicate any one or more of a temperature of the first and second electrodes, and conductivity between the electrodes.

The present disclosure relates to a method for estimating parameters of a junction of a power semi-conductor element comprising: •—Detecting at least one stable on-line operating condition through measurements (2, 3, 4) of Von, Ion, Tc on a semi-conductor module (1) where Ion is a current for which the on-state voltage Von of the semi-conductor is sensitive to the temperature and Tc is the temperature of the casing of said semi-conductor element; •—Measuring and storing at least one parameter set Von, Ion, Tc of said at least one stable operating condition; •—in a calculating unit (52), providing calculations for minimizing the error between a junction temperature estimation Tj of an electrical model Tj=F(Von, Ion, θelec) comprising a first set of unknown parameters θelec and another junction temperature estimation Tjmod of a loss/thermal model Tj=G(lon, Tc, θ mod) comprising a second set of unknown parameters θ mod and obtaining at least one set of parameters θelec and at least one parameter θ mod providing minimization of said error; •—providing the calculated value of Tj with at least one of the calculated parameters sets θelec and/or θ mod and the measured Von, Ion, Tc; •—Storing the at least one parameters set θelec and/or θ mod and/or Tj.

The present disclosure relates to a method for estimating parameters of a junction of a power semi-conductor element comprising: •—Detecting at least one stable on-line operating condition through measurements (2, 3, 4) of Von, Ion, Tc on a semi-conductor module (1) where Ion is a current for which the on-state voltage Von of the semi-conductor is sensitive to the temperature and Tc is the temperature of the casing of said semi-conductor element; •—Measuring and storing at least one parameter set Von, Ion, Tc of said at least one stable operating condition; •—in a calculating unit (52), providing calculations for minimizing the error between a junction temperature estimation Tj of an electrical model Tj=F(Von, Ion, θelec) comprising a first set of unknown parameters θelec and another junction temperature estimation Tjmod of a loss/thermal model Tj=G(lon, Tc, θ mod) comprising a second set of unknown parameters θ mod and obtaining at least one set of parameters θelec and at least one parameter θ mod providing minimization of said error; •—providing the calculated value of Tj with at least one of the calculated parameters sets θelec and/or θ mod and the measured Von, Ion, Tc; •—Storing the at least one parameters set θelec and/or θ mod and/or Tj.

A diode (11) is provided on a substrate (1) and thermally insulated from the substrate (1). A positive feedback circuit (18) provides a positive feedback loop so that when a current of the diode (11) decreases due to a change in temperature of the diode (11), the positive feedback circuit (18) further decreases the current of the diode (11), and when the current of the diode (11) increases, the positive feedback circuit (18) further increases the current of the diode (11).

In accordance with an embodiment, a controller to operate a temperature sensor comprising a transistor assembly is configured to: cause a generation of a first pair of bias currents comprising a first bias current and a second bias current for the transistor assembly; determine a first diode voltage difference of the transistor assembly corresponding to the first pair of bias currents; cause a generation of a second pair of bias currents comprising a third bias current and a fourth bias current for the transistor assembly; determine a second diode voltage difference for the transistor assembly corresponding to the second pair of bias currents; and compare the first diode voltage difference and the second diode voltage difference to determine at least one of functional information and performance information of the temperature sensor.

In accordance with an embodiment, a controller to operate a temperature sensor comprising a transistor assembly is configured to: cause a generation of a first pair of bias currents comprising a first bias current and a second bias current for the transistor assembly; determine a first diode voltage difference of the transistor assembly corresponding to the first pair of bias currents; cause a generation of a second pair of bias currents comprising a third bias current and a fourth bias current for the transistor assembly; determine a second diode voltage difference for the transistor assembly corresponding to the second pair of bias currents; and compare the first diode voltage difference and the second diode voltage difference to determine at least one of functional information and performance information of the temperature sensor.