Provided are a semiconductor-based temperature sensor and a method of operating the semiconductor-based temperature sensor. A temperature sensor includes an electrical temperature signal generator configured to generate a first electrical temperature signal that changes according to temperature and a second electrical temperature signal that changes according to temperature at a different rate from that of the first electrical temperature signal, a differential signal generator configured to generate a differential electrical temperature signal between the first electrical temperature signal and the second electrical temperature signal, and an analog digital converter (ADC) configured to convert the differential electrical temperature signal into digital temperature information.

A thermal sensor in some embodiments comprises two temperature-sensitive branches, each including a thermal-sensing device, such as one or more bipolar-junction transistors, and a current source for generating a current density in the thermal-sensing device to generate a temperature-dependent signal. The thermal sensor further includes a signal processor configured to multiply the temperature-dependent signal from the branches by respective and different gain factors, and combine the resultant signals to generate an output signal that is substantially proportional to the absolute temperature the thermal sensor is disposed at.

A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

A gas sensing device, comprising a bulk and an array of gas sensing elements that are thermally isolated from the bulk, wherein each gas sensing element of a plurality of gas sensing elements of the array comprises (i) a gas reactive element that has a gas dependent temperature parameter; (ii) a semiconductor temperature sensing element that is thermally coupled to the gas reactive element and is configured to generate detection signals that are responsive to a temperature of the gas reactive element; and (iii) multiple heating elements that are configured to heat the gas reactive element to at least one predefined temperature.

Structures including non-volatile memory elements and methods of forming such structures. The structure includes a first non-volatile memory element, a second non-volatile memory element, and temperature sensing electronics coupled to the first non-volatile memory element and the second non-volatile memory element.

Structures including non-volatile memory elements and methods of forming such structures. The structure includes a first non-volatile memory element, a second non-volatile memory element, and temperature sensing electronics coupled to the first non-volatile memory element and the second non-volatile memory element.

A temperature detection device includes: a temperature detection element; a constant current circuit configured to supply a driving current to the temperature detection element; and a temperature signal generation unit configured to convert a voltage of the temperature detection element when the driving current is supplied to the temperature detection element into a temperature signal. The temperature detection device includes a driving current monitoring circuit configured to monitor change in the driving current outputted from the constant current circuit. The driving current monitoring circuit includes a current-voltage conversion unit voltage of which changes corresponding to a change in the driving current, and outputs by a switching circuit the voltage when the driving current is supplied from the constant current circuit to the current-voltage conversion unit.

A temperature sensor configured to generate an output signal corresponding to a sensed and/or measured temperature includes: a diode including a cathode coupled to a ground node; a first capacitor including a first end coupled to the ground node; a switch circuit configured to connect a second end of the first capacitor to a positive voltage node or an anode of the diode according to a control signal; switch control circuitry configured to generate the control signal based on a reference voltage with a voltage of the anode; and an output signal generator configured to generate the output signal corresponding to the sensed temperature based on a frequency of the control signal.

A temperature sensor configured to generate an output signal corresponding to a sensed and/or measured temperature includes: a diode including a cathode coupled to a ground node; a first capacitor including a first end coupled to the ground node; a switch circuit configured to connect a second end of the first capacitor to a positive voltage node or an anode of the diode according to a control signal; switch control circuitry configured to generate the control signal based on a reference voltage with a voltage of the anode; and an output signal generator configured to generate the output signal corresponding to the sensed temperature based on a frequency of the control signal.

A semiconductor device includes a semiconductor portion with a first surface at a front side, wherein the semiconductor portion includes an active area, a termination structure laterally surrounding the active area, and a field-free region between the termination structure and a lateral outer surface of the semiconductor portion. The field-free region includes a probe contact region and a main portion. The probe contact region and the main portion form a semiconductor junction. A probe pad on the first surface and the probe contact region form an ohmic contact. A protection passivation layer on the first surface is formed on at least the termination structure and exposes the probe pad.