A semiconductor device includes a first temperature sensor module, a second temperature sensor module, a first temperature controller, and a second temperature controller. The first temperature sensor module includes a bandgap reference circuit that outputs a plurality of divided voltages, and a first conversion circuit that performs analog-to-digital conversion processing on one of the plurality of divided voltages to generate a first digital value. The second temperature sensor module includes a second conversion circuit that performs analog-to-digital conversion processing on the one of the plurality of divided voltages to generate a second digital value. The first temperature sensor controller converts the first digital value to a first temperature. The second temperature sensor controller converts the second digital value to a second temperature. The semiconductor device determines whether the first and second temperature modules operate normally based on a difference between the first temperature and the second temperature.

An example apparatus includes: a temperature sensor including a temperature output, a register including an input and an output, the input coupled to the temperature output, a subtraction circuit including a first subtraction input, a second subtraction input, and a subtraction output, the first subtraction input coupled to the input of the register, the second subtraction input coupled to the output of the register, a timing circuit including a cycle time input, a shift output, and a direction output, and a division circuit including a division input, a shift input, a direction input, and a divided output, the division input coupled to the subtraction output, the shift input coupled to the shift output, the direction input coupled to the direction output.

An example apparatus includes: a temperature sensor including a temperature output, a register including an input and an output, the input coupled to the temperature output, a subtraction circuit including a first subtraction input, a second subtraction input, and a subtraction output, the first subtraction input coupled to the input of the register, the second subtraction input coupled to the output of the register, a timing circuit including a cycle time input, a shift output, and a direction output, and a division circuit including a division input, a shift input, a direction input, and a divided output, the division input coupled to the subtraction output, the shift input coupled to the shift output, the direction input coupled to the direction output.

A temperature sensing circuit includes a current source circuit, a resistor, a bandgap voltage generation circuit, a voltage-equalizing circuit and a temperature determining circuit. The current source circuit has a first current output terminal and a second current output terminal. The bandgap voltage generation circuit includes a pair of bipolar junction transistors. The voltage-equalizing circuit equalizes voltages of a first current output terminal and the second current output terminal. The temperature determining circuit includes a sampling capacitor and a calculation circuit. The sampling capacitor samples a first voltage of a first terminal of the resistor and a second voltage of a second terminal of the resistor. The calculation circuit generates a temperature value by calculating a voltage difference between the first voltage and the second voltage.

Methods and apparatus to provide an adaptive gate driver for switching devices are disclosed. An example apparatus includes an electrical switch to drive an electrical system; a condition characterizer to select a drive strength based on a first system parameter corresponding to the electrical system, the first system parameter including at least one of an input voltage corresponding to the electrical switch, an output current corresponding to the electrical switch, or a process variation of the electrical switch; and a driver to generate an output having a current corresponding to the selected drive strength.

Methods and apparatus to provide an adaptive gate driver for switching devices are disclosed. An example apparatus includes an electrical switch to drive an electrical system; a condition characterizer to select a drive strength based on a first system parameter corresponding to the electrical system, the first system parameter including at least one of an input voltage corresponding to the electrical switch, an output current corresponding to the electrical switch, or a process variation of the electrical switch; and a driver to generate an output having a current corresponding to the selected drive strength.

A digital sensor network is overlaid on an integrated circuit for identifying and mapping hotspots in the integrated circuit. The digital sensor network may include a plurality of digital sensors distributed within an area of an integrated circuit component of an integrated circuit. Each of the plurality of digital sensors may include a ring oscillator and may be configured to output a counter value of a ring oscillator counted over a designated period. A sensor network control unit may be provided that is communicatively connected to the plurality of digital sensors via a communication circuit. The sensor network control unit may be configured to receive a plurality of counter values including the counter value from each of the plurality of digital sensors and identify a hotspot within the area of the integrated circuit.

The technology of this disclosure relates to an IGBT chip integrating a temperature sensor, and relates to the field of power device technologies, to improve accuracy of temperature monitoring of the IGBT chip. The IGBT chip integrating the temperature sensor includes a cell region, an emitter pad, a gate pad, a gate finger structure, a temperature sensing module, and a conductive shielding structure. The emitter pad is electrically connected to emitters of a plurality of IGBT cells. The gate finger structure is connected between the gate pad and gates of the plurality of IGBT cells. The temperature sensing module includes a temperature sensor, an anode pad, a cathode pad, and a metal lead. The temperature sensor and at least a part of the metal lead are located in the gate finger structure and are insulated from the gate finger structure.

A circuit is disclosed that includes a first differential input pair, a second differential input pair, a first switch, and a second switch. The first differential input pair receives an output voltage at an output node and a first temperature-dependent voltage. The second differential input pair receives the output voltage and a second temperature-dependent voltage. When the output voltage reaches the second temperature-dependent voltage, the first switch is turned on to pull up the output voltage in response to a first control signal generated according to an output signal of the second differential input pair. When the output voltage reaches the first temperature-dependent voltage, the second switch is turned on to pull down the output voltage in response to a second control signal generated according to an output signal of the first differential input pair.

A circuit is disclosed that includes a first differential input pair, a second differential input pair, a first switch, and a second switch. The first differential input pair receives an output voltage at an output node and a first temperature-dependent voltage. The second differential input pair receives the output voltage and a second temperature-dependent voltage. When the output voltage reaches the second temperature-dependent voltage, the first switch is turned on to pull up the output voltage in response to a first control signal generated according to an output signal of the second differential input pair. When the output voltage reaches the first temperature-dependent voltage, the second switch is turned on to pull down the output voltage in response to a second control signal generated according to an output signal of the first differential input pair.