A temperature sensor assembly for measuring a gas temperature in a gas flow stream includes a first substrate having a first surface configured to be connected to a thermally conductive structure in a gas path, a first temperature sensor mounted to the first substrate a first distance from the first surface, and a second temperature sensor mounted to the first substrate a second distance from the first surface. The second distance is less than the first distance. The first and second temperature sensors are arranged along a temperature gradient.

A food thermometer includes a resistance thermometer with an electrical conductor and at least three measuring points for the electrical conductor.

A temperature sensor integrated in a transistor array, e.g., metal-oxide-semiconductor field-effect transistor (MOSFET) array, is provided. The integrated temperature sensor may include a doped well region formed in a substrate (e.g., SiC substrate), a resistor gate formed over the doped well region, first and second sensor terminals conductively coupled to the doped well region on opposite sides of the resistor gate. The integrated temperature sensor includes a gate driver to apply a voltage to the resistor gate that affects a resistance of the doped well region below the resistor gate, and temperature analysis circuitry to determine a resistance of a conductive path passing through the doped well region, and determine a temperature associated with the transistor array.

A temperature sensor integrated in a transistor array, e.g., metal-oxide-semiconductor field-effect transistor (MOSFET) array, is provided. The integrated temperature sensor may include a doped well region formed in a substrate (e.g., SiC substrate), a resistor gate formed over the doped well region, first and second sensor terminals conductively coupled to the doped well region on opposite sides of the resistor gate. The integrated temperature sensor includes a gate driver to apply a voltage to the resistor gate that affects a resistance of the doped well region below the resistor gate, and temperature analysis circuitry to determine a resistance of a conductive path passing through the doped well region, and determine a temperature associated with the transistor array.

Methods, apparatus, systems and articles of manufacture to trim temperature sensors are disclosed. An example method includes: sampling a first value indicative of a temperature of a first die of a multi-chip module (MCM) with a first temperature sensor, the first die including a first transistor having a channel including a first material; and calibrating a second temperature sensor configured to sample a second value indicative of a temperature of a second die including a second transistor have a second channel including a second material, the calibrating based on the first value.

Methods, apparatus, systems and articles of manufacture to trim temperature sensors are disclosed. An example method includes: sampling a first value indicative of a temperature of a first die of a multi-chip module (MCM) with a first temperature sensor, the first die including a first transistor having a channel including a first material; and calibrating a second temperature sensor configured to sample a second value indicative of a temperature of a second die including a second transistor have a second channel including a second material, the calibrating based on the first value.

A sensing system for a battery includes a flex foil substrate including a first cover layer. A conductive layer defines a trace pattern including traces. A second cover layer defines a first opening. The conductive layer is sandwiched between the first cover layer and the second cover layer. The first opening exposes a first trace and a second trace of the trace pattern. A busbar is attached to the first cover layer of the flex foil substrate. A temperature sensor is connected to the first trace and the second trace of the trace pattern in the first opening of the first cover layer.

A sensing system for a battery includes a flex foil substrate including a first cover layer. A conductive layer defines a trace pattern including traces. A second cover layer defines a first opening. The conductive layer is sandwiched between the first cover layer and the second cover layer. The first opening exposes a first trace and a second trace of the trace pattern. A busbar is attached to the first cover layer of the flex foil substrate. A temperature sensor is connected to the first trace and the second trace of the trace pattern in the first opening of the first cover layer.

A probe for direct nano- and micro-scale electrical characterization of materials and semi conductor wafers. The probe comprises a probe body, a first cantilever extending from the probe body, and a first thermal detector extending from the probe body. The thermal detector is used to position the cantilever with respect to a test sample.

A probe for direct nano- and micro-scale electrical characterization of materials and semi conductor wafers. The probe comprises a probe body, a first cantilever extending from the probe body, and a first thermal detector extending from the probe body. The thermal detector is used to position the cantilever with respect to a test sample.