A temperature sensor is provided. The temperature sensor comprises: an inductor-capacitor (LC) oscillator configured; and a look-up table stored in a memory, wherein the look-up table contains a set of frequencies as a function of ambient temperature values, wherein when the LC oscillator is calibrated to a frequency from amongst the set of frequencies, the respective ambient temperature as stored in the look-up table is retrieved.

A crystal oscillator device is disclosed. The crystal oscillator device includes: a casing; a crystal piece provided in the casing; a pair of excitation electrodes provided on the crystal piece; a magnetic flux generating member provided on the crystal piece; a coil through which magnetic flux from the magnetic flux generating member passes; and an alarm generator configured to generate an alarm based on a signal whose amplitude is equal to or less than a reference value, the signal being generated in the coil.

Provided is a surface acoustic wave device using a novel and steadily suppliable piezoelectric material that is resistant to a high-temperature environment and enables the surface acoustic wave device to use a 2 GHz to 2.5 GHz band or higher. The surface acoustic wave device includes: a piezoelectric substrate formed from a monocrystal of gehlenite (CAS: Ca2Al(AlSi)O7); and interdigital transducers formed on a surface acoustic wave propagation plane of the piezoelectric substrate.

Provided is a surface acoustic wave device using a novel and steadily suppliable piezoelectric material that is resistant to a high-temperature environment and enables the surface acoustic wave device to use a 2 GHz to 2.5 GHz band or higher. The surface acoustic wave device includes: a piezoelectric substrate formed from a monocrystal of gehlenite (CAS: Ca2Al(AlSi)O7); and interdigital transducers formed on a surface acoustic wave propagation plane of the piezoelectric substrate.

An example resonating structure comprises a substrate, a resonator body, and an anchoring body for anchoring the resonator body to the substrate. The resonator body includes a layer of base material and, deposited on top of the layer of base material, a layer of mismatch material having a mismatch in temperature coefficient of elasticity (TCE) relative to the base material. The base material is doped with a dopant having a concentration chosen so as to minimize a second order temperature coefficient of frequency for the resonator body. The thickness of the layer of the mismatch material is chosen so as to minimize a first order temperature coefficient of frequency for the resonator body.

The invention relates to a device for measuring temperature in a high-voltage portion of a switchgear station, characterised in that it comprises: at least one temperature sensor (21, 22, 23, 24) located at a point on the high-voltage portion of which the temperature is to be monitored, at least one antenna (25) connected to the at least one temperature sensor, a control module (26) located in a low-voltage portion of the switchgear station, and at least one antenna (27) connected to the control module. The at least one temperature sensor (21, 22, 23, 24) is suitable for transmitting a signal representative of a temperature measurement and the control module (26) is suitable for receiving the representative signal, via the antennas, and for processing said signal in order to produce a message.

The invention relates to a device for measuring temperature in a high-voltage portion of a switchgear station, characterised in that it comprises: at least one temperature sensor (21, 22, 23, 24) located at a point on the high-voltage portion of which the temperature is to be monitored, at least one antenna (25) connected to the at least one temperature sensor, a control module (26) located in a low-voltage portion of the switchgear station, and at least one antenna (27) connected to the control module. The at least one temperature sensor (21, 22, 23, 24) is suitable for transmitting a signal representative of a temperature measurement and the control module (26) is suitable for receiving the representative signal, via the antennas, and for processing said signal in order to produce a message.

A vibration element includes: a quartz crystal substrate having a first vibration part and a second vibration part; a pair of first excitation electrodes formed at two main surfaces of the quartz crystal substrate, at the first vibration part; and a pair of second excitation electrodes formed in such a way as to sandwich the second vibration part in a direction of thickness of the quartz crystal substrate, at the second vibration part. At least one second excitation electrode of the pair of second excitation electrodes is formed at an inclined surface inclined to at least one of the two main surfaces.

A vibration element includes: a quartz crystal substrate having a first vibration part and a second vibration part; a pair of first excitation electrodes formed at two main surfaces of the quartz crystal substrate, at the first vibration part; and a pair of second excitation electrodes formed in such a way as to sandwich the second vibration part in a direction of thickness of the quartz crystal substrate, at the second vibration part. At least one second excitation electrode of the pair of second excitation electrodes is formed at an inclined surface inclined to at least one of the two main surfaces.

Some aspects of the present disclosure feature a sensing device (e.g. for temperature, moisture or detection of substances) comprising a magnetic bias layer, a resonator, a spacer, and an environmental change receptor. The spacer is disposed between the magnetic bias layer and the resonator. At least one of the resonator surfaces has a predefined channel. The environmental change receptor is disposed proximate to the predefined channel. In response to a change in environment, the environmental change receptor distributes along a part of the channel.