A wirelessly powered resistive sensor is presented. The sensor includes: an antenna; a parametric resonator and a resistive loop circuit. The parametric resonator is configured to receive a pumping signal from the antenna and operable to oscillate at two frequencies. The resistive loop circuit is inductively coupled to the parametric resonator, such that oscillation frequency of the parametric resonator changes (e.g., linearly) with changes in resistance of the resistance loop circuit. The resistance of the resistor in the resistive loop circuit approximately equals the impedance of the resistive loop circuit at one resonance frequency of the parametric resonator. The resistive sensor may further include a resonator enhancer circuit arranged adjacent to the parametric resonator and operates to resonate at frequency of the pumping signal.

The disclosed technology generally relates to quartz crystal devices and more particularly to quartz crystal devices configured to vibrate in torsional mode. In one aspect, a quartz crystal device configured for temperature sensing comprises a fork-shaped quartz crystal comprising a pair of elongate tines laterally extending from a base region in a horizontal lengthwise direction of the fork-shaped quartz crystal. Each of the tines has formed on one or both of opposing sides thereof a vertically protruding line structure laterally elongated in the horizontal lengthwise direction. The quartz crystal device further comprises a first electrode and a second electrode formed on the one or both of the opposing sides of each of the tines and configured such that, when an electrical bias is applied between the first and second electrodes, the fork-shaped quartz crystal vibrates in a torsional mode in which each of the tines twists about a respective axis extending in the horizontal lengthwise direction.

A temperature sensor supplying a measurement signal varying linearly to within 10% as a function of the temperature at least over a temperature range, including an oscillator supplied by a supply voltage and supplying a first oscillating signal, said oscillator including first MOS transistors, the voltage at each internal node of the oscillator having a dynamic range equal to the supply voltage, the measuring signal corresponding to the supply voltage.

A temperature sensor supplying a measurement signal varying linearly to within 10% as a function of the temperature at least over a temperature range, including an oscillator supplied by a supply voltage and supplying a first oscillating signal, said oscillator including first MOS transistors, the voltage at each internal node of the oscillator having a dynamic range equal to the supply voltage, the measuring signal corresponding to the supply voltage.

The disclosed technology generally relates to quartz crystal devices and more particularly to quartz crystal devices configured to vibrate in torsional mode. In one aspect, a quartz crystal device configured for temperature sensing comprises a fork-shaped quartz crystal comprising a pair of elongate tines laterally extending from a base region in a horizontal lengthwise direction of the fork-shaped quartz crystal, wherein each of the tines has formed on one or both of opposing sides thereof a pair of vertically recessed groove structures laterally elongated in the horizontal lengthwise direction, wherein the pair of groove structures are separated in a horizontal widthwise direction by a line structure. The quartz crystal device further comprises a first electrode and a second electrode formed on the one or both of the opposing sides of each of the tines and configured such that, when an electrical bias is applied between the first and second electrodes, the fork-shaped quartz crystal vibrates in a torsional mode in which each of the tines twists about a respective axis extending in the horizontal lengthwise direction.

The disclosed technology generally relates to quartz crystal devices and more particularly to quartz crystal devices configured to vibrate in torsional mode. In one aspect, a quartz crystal device configured for temperature sensing comprises a fork-shaped quartz crystal comprising a pair of elongate tines laterally extending from a base region in a horizontal lengthwise direction of the fork-shaped quartz crystal, wherein each of the tines has formed on one or both of opposing sides thereof a pair of vertically recessed groove structures laterally elongated in the horizontal lengthwise direction, wherein the pair of groove structures are separated in a horizontal widthwise direction by a line structure. The quartz crystal device further comprises a first electrode and a second electrode formed on the one or both of the opposing sides of each of the tines and configured such that, when an electrical bias is applied between the first and second electrodes, the fork-shaped quartz crystal vibrates in a torsional mode in which each of the tines twists about a respective axis extending in the horizontal lengthwise direction.

A temperature sensor includes a NAND gate and a plurality of delay units. The NAND gate includes a first and a second input terminals, and an output terminal. The first input terminal is configured to receive an external starting control signal. The plurality of delay units are connected in series. An input end of the first delay unit is connected to the output terminal of the NAND gate. An output end of the last delay unit is connected to the second input terminal of the NAND gate, thereby forming a ring oscillator structure. The temperature sensor can realize conversion of temperature-leakage-frequency based on the ring oscillator structure in a temperature range of −40˜125° C., thereby simplifying design complexity and achieves high accuracy.

There is provided a dual-output microelectromechanical system (MEMS) resonator. The MEMS resonator can be operated selectively and concurrently in an in-plane mode of vibration and an out-of-plane mode of vibration to obtain respectively a first electrical signal having a first frequency, and a second electrical signal having a second frequency being less than the first frequency. The first and second electrical signals are mixed to obtain a third electrical signal having a third frequency, where the third frequency is proportional to a temperature of the MEMS resonator. The temperature is determined based on the third frequency. Values of the first and second frequencies can be adjusted based on the determined temperature to compensate for frequency deviations due to temperature deviations. There is also provided methods and systems for determining the temperature of the dual-output MEMS, for compensating the frequency, and a method of manufacturing the dual-output MEMS.

A shared pair of input/output cells configured to be able to be connected to a first external resonator or a second external resonator. A first oscillator and a second oscillator are coupled to the shared pair input/output cells by a switching circuit. The switching circuit is configured to be able to connect either the first oscillator or the second oscillator to the pair of input/output cells.

A shared pair of input/output cells configured to be able to be connected to a first external resonator or a second external resonator. A first oscillator and a second oscillator are coupled to the shared pair input/output cells by a switching circuit. The switching circuit is configured to be able to connect either the first oscillator or the second oscillator to the pair of input/output cells.