An ultrasonic sensor comprises a transducer in operable communication with a power source, a waveguide comprising a metal and at least one of a fissile material or a fertile material in operable communication with the transducer and configured to propagate and reflect acoustic waves generated by the transducer, the transducer configured to convert reflected acoustic waves to an electric signal, a thermally insulative material proximate the waveguide, and a control system in operable communication with the transducer, the control system configured to determine at least a temperature of the waveguide based on the reflected acoustic waves. Related methods are also disclosed.

An ultrasonic sensor comprises a transducer in operable communication with a power source, a waveguide comprising a metal and at least one of a fissile material or a fertile material in operable communication with the transducer and configured to propagate and reflect acoustic waves generated by the transducer, the transducer configured to convert reflected acoustic waves to an electric signal, a thermally insulative material proximate the waveguide, and a control system in operable communication with the transducer, the control system configured to determine at least a temperature of the waveguide based on the reflected acoustic waves. Related methods are also disclosed.

An apparatus for measuring temperature in a layered environment includes an ultrasound transducer positioned perpendicular to an exterior surface of a first layer. The ultrasound transducer is in communication with a computer processor, power source, and computer-readable memory. The processor is configured to: measure a thickness of the first layer; measure an exterior surface temperature of the first layer; calculate an impedance of the first layer based on the thickness and the exterior surface temperature; and calculate an interior surface temperature of the first layer based on the impedance and the exterior surface temperature of the first layer.

An apparatus for measuring temperature in a layered environment includes an ultrasound transducer positioned perpendicular to an exterior surface of a first layer. The ultrasound transducer is in communication with a computer processor, power source, and computer-readable memory. The processor is configured to: measure a thickness of the first layer; measure an exterior surface temperature of the first layer; calculate an impedance of the first layer based on the thickness and the exterior surface temperature; and calculate an interior surface temperature of the first layer based on the impedance and the exterior surface temperature of the first layer.

A temperature detection device includes: a detection processing unit configured to transmit a transmission radio wave, simultaneously receive a response radio wave corresponding to the transmission radio wave, and detect whether a temperature of an object to be measured is normal or abnormal based on the response radio wave; and a temperature sensing unit configured to receive the transmission radio wave and transmit the response radio wave responding to the transmission radio wave. The detection processing unit calculates, from the response radio wave received via a second antenna, an amplitude, a phase, or a quadrature phase amplitude of the response radio wave and compares the temperature of the object to be measured to a temperature determined in advance based on a result of the calculation.

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Disclosed is a method for detecting a value which represents the temperature of a vibrating element of an ultrasonic transducer. The ultrasonic transducer has a resonant frequency (f.sub.r). The method comprises the steps of operating the ultrasonic transducer with an electric measuring signal at a measuring frequency (f.sub.m) which is above the resonant frequency, and of detecting the absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (f.sub.m) and, building thereon, ascertaining the desired value, which is to represent the temperature of a vibrating element of an ultrasonic transducer, as a function of the detected absolute value of the complex impedance of the ultrasonic transducer at this measuring frequency (f.sub.m).

A reconfigurable all-digital temperature sensor includes a NAND gate and several delay units, the NAND gate comprises two input terminals and an output terminal, one input terminal is used for external starting control signal; a plurality delay units are connected in series, the input end of the first delay unit is connected to the output terminal of the NAND gate, and the output end of the last delay unit is connected to another input terminal of the NAND gate, thereby forming a ring oscillator structure; each delay unit includes a leakage-based inverter and a Schmitt trigger, and the output end of the leakage-based inverter is connected to the input end of the Schmitt trigger. The reconfigurable all-digital temperature sensor can realize the conversion of temperature-leakage-frequency based on the ring oscillator structure in the temperature range of −40˜125° C., thereby reducing the design complexity and achieving high accuracy.

An apparatus and method for real-time sensing of properties in industrial manufacturing equipment are described. The sensing system includes first plural sensors mounted within a processing environment of a semiconductor device manufacturing system, wherein each sensor is assigned to a different region to monitor a physical or chemical property of the assigned region of the manufacturing system, and a reader system having componentry configured to simultaneously and wirelessly interrogate the plural sensors. The reader system uses a single high frequency interrogation sequence that includes (1) transmitting a first request pulse signal to the first plural sensors, the first request pulse signal being associated with a first frequency band, and (2) receiving uniquely identifiable response signals from the first plural sensors that provide real-time monitoring of variations in the physical or chemical property at each assigned region of the system.