Between a nitrogen-vacancy center and a support portion, a cut-off portion is provided that cuts off the nitrogen-vacancy center from the support portion.

Disclosed is a method of using a charged particle microscope for inspecting a sample mounted on a sample holder. The microscope is equipped with a solid state detector for detecting secondary particles emanating from the sample in response to irradiation of the sample with the primary beam, with the solid state detector in direct optical view of the sample. In some embodiments, the sample is mounted on a heater with a fast thermal response time. The method comprises contactless measurement of the temperature of the sample and/or sample holder using the solid state detector.

Disclosed is a method of using a charged particle microscope for inspecting a sample mounted on a sample holder. The microscope is equipped with a solid state detector for detecting secondary particles emanating from the sample in response to irradiation of the sample with the primary beam, with the solid state detector in direct optical view of the sample. In some embodiments, the sample is mounted on a heater with a fast thermal response time. The method comprises contactless measurement of the temperature of the sample and/or sample holder using the solid state detector.

Methods and apparatuses for determining in-situ a temperature of a substrate with a thermal sensor in a vacuum chamber are described herein. In one embodiment a thermal sensor has a transmitter configured to transmit electromagnetic waves, a receiver configured to receive electromagnetic waves, and a controller configured to control the transmitter and receiver, wherein the controller determines a temperature from a difference between the transmitted electromagnetic wave and the received electromagnetic wave.

Methods and apparatuses for determining in-situ a temperature of a substrate with a thermal sensor in a vacuum chamber are described herein. In one embodiment a thermal sensor has a transmitter configured to transmit electromagnetic waves, a receiver configured to receive electromagnetic waves, and a controller configured to control the transmitter and receiver, wherein the controller determines a temperature from a difference between the transmitted electromagnetic wave and the received electromagnetic wave.

A device and method of precise distance measurement of a transmission line to any object below it is disclosed, along with a network of such devices. The technique employs ultrasonic or laser sensor technology to measure the distance to the nearest object, be it vegetation or a crossing conductor below, and reports that distance wirelessly to the system operator or transmission asset owner. The ultrasonic measurement package may be part of a Transmission Line Security Monitor, which mounts to a transmission line conductor and is powered by the transmission line, transmitting the data by radio links. The technology is equally applicable to encroachment of objects from the side (for example, other transmission lines), as well as to other electrical lines, such as distribution lines, or to other sensing. A built-in transceiver allows the device to communicate with other devices and forward alerts from these devices in a daisy-chain fashion to the intended recipient.

A method for the measurement of temperature in high temperature and high pressure processes includes the steps of providing at least a first material compound and at least a second material compound. The at least first and second compounds are mixed to form a material sample. The material sample is loaded into a device and the device and material sample are subjected to a high pressure of up to about 10 GPa and a high temperature of up to about 1700 C. to form the material sample into a solid crystalline solution. The material sample is recovered for analysis and the composition of the crystalline solid solution is measured to determine the temperature.

A method for the measurement of temperature in high temperature and high pressure processes includes the steps of providing at least a first material compound and at least a second material compound. The at least first and second compounds are mixed to form a material sample. The material sample is loaded into a device and the device and material sample are subjected to a high pressure of up to about 10 GPa and a high temperature of up to about 1700 C. to form the material sample into a solid crystalline solution. The material sample is recovered for analysis and the composition of the crystalline solid solution is measured to determine the temperature.

The present invention provides a multi-wavelength spectral thermometry based on mobile narrow-band window and optimization and belongs to the field of thermal radiation temperature detection. A continuous spectrum of a thermal radiation object is collected by a spectrometer; the spectrum of the thermal radiation object is denoised, windowed and standardized; the whole detection wavelength range is traversed within an appropriate narrow-band window; through comparison with windowed and standardized black-body radiation spectra at different temperatures in a corresponding spectral window, the temperature and emissivity distribution of the thermal radiation object is calculated with high accuracy without depending on emissivity model estimation, and high universality and noise resistance are achieved.

An average diffraction intensity ratio (y=(h.sub.1, k.sub.1, l.sub.1)/(h.sub.2, k.sub.2, l.sub.2)) for a rotation angle () is obtained from a first diffraction chart and a second diffraction chart, and a surface temperature during deposition is calculated based on this average diffraction intensity ratio. Based on data on the surface temperature of a polycrystalline silicon rod calculated and supplied current and applied voltage during the deposition of the polycrystalline silicon rod, the supplied current and the applied voltage when newly manufacturing a polycrystalline silicon rod is controlled to control a surface temperature during the deposition process. By using such a temperature control method, it is also possible to control the difference T (=T.sub.cT.sub.s) between the center temperature T.sub.c and the surface temperature T.sub.s of a polycrystalline silicon rod during a deposition process to control the value of residual stress in the polycrystalline silicon rod.