A pressure sensor including a housing with a sensing element therein. A communication passageway is formed in the housing. The sensing element is in fluid communication with an outside of the housing through the communication passageway. The pressure sensor is further provided with a compensating structure, so that when a contact force is increased due to occurrence of a volume expansion of a liquid passed into the housing through the communication passageway, the compensating structure is used to compensate the volume expansion. A plug may also be used with the pressure sensor. The pressure sensor is such that when the liquid within the pressure sensor has an increased volume due to being frozen, such increased volume can be compensated, so as to prevent the components of the pressure sensor from being damaged.

Pressure sensors having ring-tensioned membranes are disclosed. A tensioning ring is bonded to a membrane in a manner that results in the tensioning ring applying a tensile force to the membrane, flattening the membrane and reducing or eliminating defects that may have occurred during production. The membrane is bonded to the sensor housing at a point outside the tensioning ring, preventing the process of bonding the membrane to the housing from introducing defects into the tensioned portion of the membrane. A dielectric may be introduced into the gap between the membrane and the counter electrode in a capacitive pressure sensor, resulting in an improved dynamic range.

Sensor signal detection device includes: a sensor element; a temperature detection element connected in series with the sensor element; a constant voltage power supply applying constant voltage to a series circuit of the temperature detection element and the sensor element; a short-circuit switch short-circuiting both terminals of the temperature detection element; and a controller controlling a changeover between a sensor detection state and a temperature detection state. In the sensor detection state, a sensor signal from the sensor element is obtained by turning on the short-circuit switch to apply the constant voltage across both terminals of the sensor element from the constant voltage power supply. In the temperature detection state, a temperature detection signal of the temperature detection element is obtained by turning off the short-circuit switch to connect the temperature detection element to the sensor element in series and applying constant voltage from the constant voltage power supply.

Sensor signal detection device includes: a sensor element; a temperature detection element connected in series with the sensor element; a constant voltage power supply applying constant voltage to a series circuit of the temperature detection element and the sensor element; a short-circuit switch short-circuiting both terminals of the temperature detection element; and a controller controlling a changeover between a sensor detection state and a temperature detection state. In the sensor detection state, a sensor signal from the sensor element is obtained by turning on the short-circuit switch to apply the constant voltage across both terminals of the sensor element from the constant voltage power supply. In the temperature detection state, a temperature detection signal of the temperature detection element is obtained by turning off the short-circuit switch to connect the temperature detection element to the sensor element in series and applying constant voltage from the constant voltage power supply.

An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

An exemplary microelectromechanical device includes a MEMS layer, portions of which respond to an external force in order to measure the external force. A substrate layer is located below the MEMS layer and an anchor couples the substrate layer and MEMS layer to each other. A plurality of temperature sensors are located within the substrate layer to identify a temperature gradient being experienced by the MEMS device. Compensation is performed or operations of the MEMS device are modified based on temperature gradient.

A micro-electro-mechanical pressure sensor device, formed by a cap region and by a sensor region of semiconductor material. An air gap extends between the sensor region and the cap region; a buried cavity extends underneath the air gap, in the sensor region, and delimits a membrane at the bottom. A through trench extends within the sensor region and laterally delimits a sensitive portion housing the membrane, a supporting portion, and a spring portion, the spring portion connecting the sensitive portion to the supporting portion. A channel extends within the spring portion and connects the buried cavity to a face of the second region. The first air gap is fluidically connected to the outside of the device, and the buried cavity is isolated from the outside via a sealing region arranged between the sensor region and the cap region.

Exemplary embodiments of the present invention provide a differential pressure transducer that comprises first and second diaphragms of different configurations, i.e., different diameters and/or thicknesses. The pressure transducer provides more versatility over prior art designs as the diaphragms can be of different configurations yet still maintain substantially similar back pressures. Therefore, the errors commonly associated with back pressures are eliminated because the back pressures from the diaphragms ultimately cancel out in the sensor's differential pressure measurement.

Exemplary embodiments of the present invention provide a differential pressure transducer that comprises first and second diaphragms of different configurations, i.e., different diameters and/or thicknesses. The pressure transducer provides more versatility over prior art designs as the diaphragms can be of different configurations yet still maintain substantially similar back pressures. Therefore, the errors commonly associated with back pressures are eliminated because the back pressures from the diaphragms ultimately cancel out in the sensor's differential pressure measurement.

A pressure sensor made of semiconductor material, the sensor comprising a box defining a housing under a secondary vacuum, at least one resonator received in the housing and suspended by flexible beams from at least one elastically deformable diaphragm closing the housing that also contains means for exciting the resonator in order to set the resonator into vibration and detector means for detecting a vibration frequency of the resonator. The detector means comprise at least a first suspended piezoresistive strain gauge having one end secured to one of the beams and one end secured to the diaphragm. The resonator and the first strain gauge are arranged to form zones of doping that are substantially identical in kind and in concentration.