A method for measuring thermal resistance between a thermal component of an instrument and a consumable includes contacting a known consumable with a thermal component to be tested; driving the thermal component using a periodic sine wave input based on a predetermined interrogation frequency; measuring temperature outputs from a thermal sensor responsive to the periodic sine wave input; multiplying the temperature outputs by a reference signal in phase with the periodic sine wave input and calculating the resultant DC signal component to determine an in-phase component X; multiplying the plurality of temperature outputs by a 90° phase-shifted reference signal and calculating the resultant DC signal component to determine a quadrature, out-of-phase component Y; calculating a phase offset responsive to the periodic sine wave input based on tan.sup.−1 (Y/X) or atan2(X, Y); and determining a resistance value for the thermal interface using a calibrated resistance-phase offset equation and the calculated phase offset.

A method for measuring thermal resistance between a thermal component of an instrument and a consumable includes contacting a known consumable with a thermal component to be tested; driving the thermal component using a periodic sine wave input based on a predetermined interrogation frequency; measuring temperature outputs from a thermal sensor responsive to the periodic sine wave input; multiplying the temperature outputs by a reference signal in phase with the periodic sine wave input and calculating the resultant DC signal component to determine an in-phase component X; multiplying the plurality of temperature outputs by a 90° phase-shifted reference signal and calculating the resultant DC signal component to determine a quadrature, out-of-phase component Y; calculating a phase offset responsive to the periodic sine wave input based on tan.sup.−1 (Y/X) or atan2(X, Y); and determining a resistance value for the thermal interface using a calibrated resistance-phase offset equation and the calculated phase offset.

The invention relates to an apparatus (1; 1a; 1b; 1c) and a method for determining a material property of a test specimen (5; 5a; 5b; 5c) in a test specimen region (6; 6a; 6b; 6c) near the surface, said apparatus comprising at least one electromagnetic radiation source (2; 2a; 2b; 2c) for irradiating at least one surface region (4; 4a; 4b; 4c) of the test specimen, and a detection device (8; 8a; 8b; 8c) for detecting thermal radiation (9; 9a; 9b) emitted by the surface region and/or for detecting radiation (31) reflected from the surface region (4; 4a; 4b; 4c) of the test specimen. An evaluation device (13; 13a; 13b; 13c) for ascertaining the material property to be determined on the basis of the emitted thermal radiation (9: 9a: 9b) and/or the reflected radiation (31) is expediently provided. Advantageously, it is possible for the material property to be determined particularly reliably and nondestructively.

The invention relates to an apparatus (1; 1a; 1b; 1c) and a method for determining a material property of a test specimen (5; 5a; 5b; 5c) in a test specimen region (6; 6a; 6b; 6c) near the surface, said apparatus comprising at least one electromagnetic radiation source (2; 2a; 2b; 2c) for irradiating at least one surface region (4; 4a; 4b; 4c) of the test specimen, and a detection device (8; 8a; 8b; 8c) for detecting thermal radiation (9; 9a; 9b) emitted by the surface region and/or for detecting radiation (31) reflected from the surface region (4; 4a; 4b; 4c) of the test specimen. An evaluation device (13; 13a; 13b; 13c) for ascertaining the material property to be determined on the basis of the emitted thermal radiation (9: 9a: 9b) and/or the reflected radiation (31) is expediently provided. Advantageously, it is possible for the material property to be determined particularly reliably and nondestructively.

A thermoresistive gas sensor includes two identical, flat meshes that consist of a semiconductor material with a predetermined type of conductivity and that are interconnected in sections of an electric measuring bridge that are diametrically opposite one another, wherein each mesh of the two identical, flat meshes has mesh webs that extend parallel, adjacent to one another and that are connected electrically in parallel at the ends, where the mesh webs of the two meshes extend alternately adjacent to one another in a shared mesh plane horizontally across a window opening in a carrier plate.

A thermoresistive gas sensor includes two identical, flat meshes that consist of a semiconductor material with a predetermined type of conductivity and that are interconnected in sections of an electric measuring bridge that are diametrically opposite one another, wherein each mesh of the two identical, flat meshes has mesh webs that extend parallel, adjacent to one another and that are connected electrically in parallel at the ends, where the mesh webs of the two meshes extend alternately adjacent to one another in a shared mesh plane horizontally across a window opening in a carrier plate.

The present invention is provided with: a stage having a placing surface for a semiconductor chip, and a first heater heating the placing surface; a bonding head having a contact surface to be in contact with an subject, a second temperature sensor measuring the temperature of the subject via the contact surface, and a second heater heating the contact surface, said bonding head being driven in at least the orthogonal direction with respect to the placing surface; and a control unit measuring the temperature of the subject based on a temperature detection value of the second temperature sensor, said temperature detection value having being obtained by heating the placing surface and the contact surface to predetermined target temperatures, respectively, by means of the first and second heaters, then bringing the contact surface into contact with the subject in a state wherein heating by the second heater is stopped.

The present invention is provided with: a stage having a placing surface for a semiconductor chip, and a first heater heating the placing surface; a bonding head having a contact surface to be in contact with an subject, a second temperature sensor measuring the temperature of the subject via the contact surface, and a second heater heating the contact surface, said bonding head being driven in at least the orthogonal direction with respect to the placing surface; and a control unit measuring the temperature of the subject based on a temperature detection value of the second temperature sensor, said temperature detection value having being obtained by heating the placing surface and the contact surface to predetermined target temperatures, respectively, by means of the first and second heaters, then bringing the contact surface into contact with the subject in a state wherein heating by the second heater is stopped.

A sensor device for determining at least one heat transfer parameter of a gas comprises a sensor unit (10) comprising at least one heater element and at least one temperature sensor. A first (inner) housing (20) receives the sensor unit. The first housing comprises a first membrane (22) allowing a diffusive gas exchange between the exterior and the interior of the first housing. The first housing is received in a second (outer) housing (30). The second housing comprises a second membrane (32) allowing a diffusive gas exchange between the exterior of the second housing and the exterior of the first housing. Thereby temperature gradients inside the first housing are reduced. The second housing can be made of metal and can be disposed on a support plate (40), taking the form of a cap. An auxiliary sensor (50) can be arranged in the space between the first and second housings.

A sensor device for determining at least one heat transfer parameter of a gas comprises a sensor unit (10) comprising at least one heater element and at least one temperature sensor. A first (inner) housing (20) receives the sensor unit. The first housing comprises a first membrane (22) allowing a diffusive gas exchange between the exterior and the interior of the first housing. The first housing is received in a second (outer) housing (30). The second housing comprises a second membrane (32) allowing a diffusive gas exchange between the exterior of the second housing and the exterior of the first housing. Thereby temperature gradients inside the first housing are reduced. The second housing can be made of metal and can be disposed on a support plate (40), taking the form of a cap. An auxiliary sensor (50) can be arranged in the space between the first and second housings.