A method is provided for fabricating a nanopore in a membrane. The method includes: applying an electric potential across the membrane, where value of the electric potential is selected to induce an electric field which causes a leakage current across the membrane; monitoring current flow across the membrane while the electric potential is being applied; detecting an abrupt increase in the leakage current across the membrane; and removing the electric potential across the membrane in response to detecting the abrupt increase in the leakage current.

A measurement pigment composition including pigment particles may be coated on a surrounding area of a display panel to form a strain measuring part. A strain of the display device may be measured by using 3D images of the strain measuring part.

Provided is a gas sensor package, including: a first substrate including a gas inflow hole; and a gas sensing element mounted to the first substrate and including a gas sensing portion disposed to correspond to the gas inflow hole.

The invention relates to a method for indirectly determining the purity of silanes and germanes using a device for measuring specific resistance. The invention further relates to a system for industrially producing and/or filling containers with silanes or germanes, including a quality control in which a device is used for measuring specific resistance.

A system and method for inspecting a surface with cloud based processing, comprising: generating surface data by inspecting a surface; transferring said surface data from a client to a cloud, wherein said cloud comprises multiple interconnected computing nodes that are remotely located from said client; computing surface properties using said surface data on said cloud; generating surface analytics from said surface properties and a prior information set, with said prior information set comprising surface properties previously stored in said cloud; and transferring said surface properties and said surface analytics from said cloud to said client, whereby said surface properties and said surface analytics are generated with processing power, memory, and storage that are scalable, reliable, and upgradable on demand. A method for improving production yield of an article with cloud based processing, comprising: storing said process information in said cloud; transferring functional results to said cloud, with said functional results comprising identifying information of said articles that have failed a functional test and identifying information of said articles that have passed said functional test; generating a probable cause list from said process information in said cloud, wherein said probable cause list comprises a list of differences between said process information of one or more failed articles and said process information of one or more passed articles; and generating a root cause list from said probable cause list in said cloud, wherein said root cause list comprises process information responsible for failure in failed articles, whereby root causes of failures are analytically determined with processing power, memory, and storage that are scalable, reliable, and upgradable on demand.

Methods for evaluating semiconductor device structures are provided. In one example, a method includes forming a support layer on a first side of a lamellar sample portion of the semiconductor device structure. The lamellar sample portion has a second side opposite the first side, a target analysis area on or proximate the first side, and a first thickness defined from the first side to the second side. The second side is milled to form a reduced thickness lamellar-supported sample portion that has a milled second side opposite the first side. The support layer is removed from the reduced thickness lamellar-supported sample portion to form a reduced thickness lamellar sample portion having a second thickness that is defined from the first side to the milled second side and that is less than the first thickness. The target analysis area of the reduced thickness lamellar sample portion is evaluated.

A system and method for determining a doping profile of a sample includes a generator and at least one detector of terahertz light of multiple frequencies, configured to operate in a transmission and/or reflection mode; a materials refractive index library; and an inverse algorithm that can match simulated spectra using a trial doping profile and the materials library with the measured spectra from a sample, and map out or measure an activated doping profile into, or a free carrier distribution into, the interior of the sample.

An analysis pretreatment device according to an embodiment includes a chamber capable of containing an analysis object therein. A pressure reducer reduces pressure inside the chamber. An introducing part vaporizes a liquid and introduces the vaporized liquid into the chamber. A first supplier supplies water in a liquid state to the introducing part. A second supplier supplies hydrofluoric acid in a gas state to the introducing part. The introducing part introduces a mixed gas into the chamber. The mixed gas includes vaporized water, which is obtained by vaporizing water in a liquid state, and hydrofluoric acid in a gas state.

A method includes receiving a carrier, the carrier including a carrier body, a first filter, and a housing securing the first filter to the carrier body. The method further includes uninstalling the housing from the carrier, replacing the first filter with a second filter, reinstalling the housing on the carrier body, and inspecting the second filter. Inspecting the second filter includes using an automatic inspection mechanism to detect surface flatness of the second filter.

Systems and methods are described for generating organic solvent scan solutions and calibration standards inline for semiconductor wafer analysis. A method embodiment includes, but is not limited to, drawing, via a pump system, a first organic solvent from a first organic chemical source; drawing, via the pump system, a second organic solvent from a second organic chemical source; mixing, inline, the first organic solvent and the second organic solvent to form an organic scan solution; and introducing the organic scan solution to a scan nozzle for introduction to one or more surfaces of a semiconducting wafer to remove one or more organic contaminants from the semiconducting wafer.