Apparatuses and methods directed toward endpoint detection are disclosed herein. An example method at least includes forming a plurality of lines on a top surface of a sample; removing, a plurality of times, material from a working surface of the sample, the working surface different than the top surface; imaging, a plurality of times, the sample to at least capture the plurality of lines; and determining an endpoint based on a relative spatial characteristic between two or more lines of the plurality of lines.

The present disclosure relates to [.sup.18F]-labeled benzothiazole derivatives or salts thereof as positron emission tomography (PET) radiotracers suitable for imaging the stress-signaling non-receptor tyrosine kinase c-abl, and their use in in vivo diagnosis, preclinical and clinical imaging, patient stratification on the basis of mutational status of c-abl and assessing response to therapeutic treatments. The present disclosure further relates to the use of [.sup.18F]-labeled benzothiazole derivatives as PET radiotracers. The disclosure also provides a process for the radiosynthesis of [.sup.18F]-labeled benzothiazole derivatives.

The present disclosure provides a wafer inspection technology that involves less degradation of the image quality even when an object to be observed has a variation in height due to warpage, etc. of a wafer. This wafer inspection apparatus obtains an image with less degradation by: adjusting the focal point of an observation optical system to a height measured by a height sensor for measuring wafer surface heights; and further, correcting a switching signal for a CCD line sensor on the basis of stage position data and optical magnification data corresponding to the height so as to make a correction corresponding to the wafer surface height.

Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

A charged particle beam device according to the present invention changes a signal amount of emitted charged particles by irradiating the sample with light due to irradiation under a plurality of light irradiation conditions, and determines at least any one of a material of the sample or a shape of the sample according to the changed signal amount.

An apparatus for detecting defects on a sample is provided. The apparatus includes a stage for receiving a sample to be inspected, and a first light source configured to generate an incident light beam to illuminate the sample on the stage. The first light source is configured to sequentially emit light of different wavelengths in wavelength sweeps. The apparatus also includes imaging optics for collecting light scattered from the sample and for forming a detection light beam, a detector for receiving the detection light beam and acquiring images of the sample, collection optics disposed within the detection light beam and configured to direct the detection light beam to the detector, and a first light modulator. The first light modulator is configured to filter out signals from the detection light beam, where the signals originate from uniform periodicity of uniformly repeating structures on the sample.

Various approaches are provided for automatically focusing particle beams for SPA. In one example, a method includes determining a focus adjustment for a region of a sample to achieve a targeted defocus based on at least one defocus measurement from at least one neighboring region of the sample, and causing an acquisition of an image of the sample at the region with the focus adjustment. In this way, a targeted defocus may be achieved across regions of a sample with reduced auxiliary imaging, thereby providing increased and uniform image quality while reducing the time and thus increasing the throughput of processing.

An observation coordinate in the device coordinate system of an observation device is converted into an observation coordinate in a virtual coordinate system, using a conversion formula. Subsequently, the observation coordinate in the virtual coordinate system is converted into an observation coordinate in the device coordinate system of another observation device, using a reverse conversion formula. The virtual coordinate system is a logical coordinate system that does not depend on any device coordinate system.

A semiconductor device includes an oxide semiconductor layer including indium, a gate electrode facing the oxide semiconductor layer, a gate insulating layer between the oxide semiconductor layer and the gate electrode, and a first electrode arranged above the oxide semiconductor layer and being in contact with the oxide semiconductor layer from above the oxide semiconductor layer. The indium is unevenly distributed in an unevenly distributed region among the oxide semiconductor layer. The unevenly distributed region overlaps with the first conductive layer in a planar view.

A method for analyzing a rock sample includes segmenting a digital image volume corresponding to an image of the rock sample, to associate voxels in the digital image volume with a plurality of rock fabrics of the rock sample. The method also includes identifying a set of digital planes through the digital image volume. The set of digital planes intersects with each of the plurality of rock fabrics. The method further includes machining the rock sample to expose physical faces that correspond to the identified digital planes, performing scanning electron microscope (SEM) imaging of the physical faces to generate two-dimensional (2D) SEM images of the physical faces, and performing image processing on the SEM images to determine a material property associated with each of the rock fabrics.