A mask characterization method comprises measuring an interference signal of a reflection or transmission mask for use in lithography; and determining a quality metric for the reflection or transmission mask based on the interference signal. A mask characterization apparatus comprises a light source arranged to illuminate a reflective or transmissive mask with light whereby mask-reflected or mask-transmitted light is generated; an optical grating arranged to convert the mask-reflected or mask-transmitted light into an interference pattern; and an optical detector array arranged to generate an interference signal by measuring the interference pattern.

A mask characterization method comprises measuring an interference signal of a reflection or transmission mask for use in lithography; and determining a quality metric for the reflection or transmission mask based on the interference signal. A mask characterization apparatus comprises a light source arranged to illuminate a reflective or transmissive mask with light whereby mask-reflected or mask-transmitted light is generated; an optical grating arranged to convert the mask-reflected or mask-transmitted light into an interference pattern; and an optical detector array arranged to generate an interference signal by measuring the interference pattern.

A system for simultaneously and microscopically measuring vapor cell coating film energy transfer and relaxation characteristics at nanometer scales includes a space relaxation characteristic detection unit which includes a laser, an optical isolator, a spatial light filter, a reflector, a Glan-Taylor polarizer, a first quarter-wave plate, a spatial light modulator, a focusing lens, a second quarter-wave plate, a polarizing film, a PD detection unit, an I/V amplification unit, a data acquisition unit, a spectroscope and an optical chopper, an atomic force microscope detection unit for energy transfer micro-areas, a shielding cylinder, a coated alkali metal atomic vapor cell, a data processing unit and a magnetic field controlled coil. The energy transfer micro-area detection unit includes coated samples, a probe, an oscillator, a laser, a four-quadrant photoelectric detection unit, a band-pass filter unit, an automatic gain controller, an adder, a piezoelectric scanning cylinder, a sample table and a PI controller.

A system for simultaneously and microscopically measuring vapor cell coating film energy transfer and relaxation characteristics at nanometer scales includes a space relaxation characteristic detection unit which includes a laser, an optical isolator, a spatial light filter, a reflector, a Glan-Taylor polarizer, a first quarter-wave plate, a spatial light modulator, a focusing lens, a second quarter-wave plate, a polarizing film, a PD detection unit, an I/V amplification unit, a data acquisition unit, a spectroscope and an optical chopper, an atomic force microscope detection unit for energy transfer micro-areas, a shielding cylinder, a coated alkali metal atomic vapor cell, a data processing unit and a magnetic field controlled coil. The energy transfer micro-area detection unit includes coated samples, a probe, an oscillator, a laser, a four-quadrant photoelectric detection unit, a band-pass filter unit, an automatic gain controller, an adder, a piezoelectric scanning cylinder, a sample table and a PI controller.

A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.

A method for the patterning and control of single electrons on a surface is provided that includes implementing scanning tunneling microscopy hydrogen lithography with a scanning probe microscope to form charge structures with one or more confined charges; performing a series of field-free atomic force microscopy measurements on the charge structures with different tip heights, where interaction between the tip and the confined charge are elucidated; and adjusting tip heights to controllably position charges within the structures to write a given charge state. The present disclose also provides a Gibb's distribution machine formed with the method for the patterning and control of single electrons on a surface. A multi bit true random number generator and neural network learning hardware formed with the above described method are also provided.

A computer-based method for three-dimensional surface metrology of samples based on scanning electron microscopy and atomic force microscopy. The method includes: (i) using a scanning electron microscope (SEM) to obtain SEM data of a set of sites on a surface of a sample; (ii) using an atomic force microscope (AFM) to measure vertical parameters of sites in a calibration subset of the set; (iii) calibrating an algorithm, configured to estimate a vertical parameter of a site when SEM data of the site are fed as inputs, by determining free parameters of the algorithm, such that residuals between the algorithm-estimated vertical parameters and the AFM-measured vertical parameters are about minimized; and (iv) using the calibrated algorithm to estimate vertical parameters of the sites in the complement to the calibration subset.

A computer-based method for three-dimensional surface metrology of samples based on scanning electron microscopy and atomic force microscopy. The method includes: (i) using a scanning electron microscope (SEM) to obtain SEM data of a set of sites on a surface of a sample; (ii) using an atomic force microscope (AFM) to measure vertical parameters of sites in a calibration subset of the set; (iii) calibrating an algorithm, configured to estimate a vertical parameter of a site when SEM data of the site are fed as inputs, by determining free parameters of the algorithm, such that residuals between the algorithm-estimated vertical parameters and the AFM-measured vertical parameters are about minimized; and (iv) using the calibrated algorithm to estimate vertical parameters of the sites in the complement to the calibration subset.

A truncated non-linear interferometer-based sensor system includes an input port that receives an optical beam and a non-linear amplifier that amplifies the optical beam with a pump beam and renders a probe beam and a conjugate beam. The system’s local oscillators have a relationship with the respective beams. The system includes a sensor that transduces an input with the probe beam and the conjugate beam or their respective local oscillators. It includes one or more phase-sensitive detectors that detect a phase modulation between the respective local oscillators and the probe beam and the conjugate beam. Output from the phase-sensitive-detectors is based on the detected phase modulation. The phase-sensor-detectors include measurement circuitry that measure the phase signals. The measurement is the sum or difference of the phase signals in which the measured combination exhibit a quantum noise reduction in an intensity difference or a phase sum or an amplitude difference quadrature.

A truncated non-linear interferometer-based sensor system includes an input port that receives an optical beam and a non-linear amplifier that amplifies the optical beam with a pump beam and renders a probe beam and a conjugate beam. The system’s local oscillators have a relationship with the respective beams. The system includes a sensor that transduces an input with the probe beam and the conjugate beam or their respective local oscillators. It includes one or more phase-sensitive detectors that detect a phase modulation between the respective local oscillators and the probe beam and the conjugate beam. Output from the phase-sensitive-detectors is based on the detected phase modulation. The phase-sensor-detectors include measurement circuitry that measure the phase signals. The measurement is the sum or difference of the phase signals in which the measured combination exhibit a quantum noise reduction in an intensity difference or a phase sum or an amplitude difference quadrature.