A method of operating an atomic force microscope (AFM), using a denoising algorithm, real-time, during AFM data acquisition. Total Variation and Non-Local Means denoising are preferred. Real time images with minimized sensor noise needing no post-image acquisition processing to account for noise as described herein results.

A method of operating an atomic force microscope (AFM), using a denoising algorithm, real-time, during AFM data acquisition. Total Variation and Non-Local Means denoising are preferred. Real time images with minimized sensor noise needing no post-image acquisition processing to account for noise as described herein results.

A method for nanoscale tomographic infrared absorption imaging is provided, the method including: generating a first plurality of sets of probe measurements for a plurality of sample locations located across a surface of a sample, and measuring a magnitude and phase of a variation in displacement of the surface of the sample at the particular sample location at the second frequency, wherein the first frequency and the second frequency differ; and generating, based on the first plurality of sets of probe measurements, a three-dimensional tomographic map of absorption of infrared light at the first wavelength by the sample. Generating measurements for a particular location includes generating a first probe measurement by illuminating the sample with infrared light that varies at a first frequency and measuring a variation in displacement of the surface of the sample at the particular sample location at the first frequency.

A method for nanoscale tomographic infrared absorption imaging is provided, the method including: generating a first plurality of sets of probe measurements for a plurality of sample locations located across a surface of a sample, and measuring a magnitude and phase of a variation in displacement of the surface of the sample at the particular sample location at the second frequency, wherein the first frequency and the second frequency differ; and generating, based on the first plurality of sets of probe measurements, a three-dimensional tomographic map of absorption of infrared light at the first wavelength by the sample. Generating measurements for a particular location includes generating a first probe measurement by illuminating the sample with infrared light that varies at a first frequency and measuring a variation in displacement of the surface of the sample at the particular sample location at the first frequency.

A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

A method of evaluating a thickness of a film on a substrate includes detecting atomic force responses of the film to exposure of electromagnetic radiation in the infrared portion of the electromagnetic spectrum. The use of atomic force microscopy to evaluate thicknesses of thin films avoids underlayer noise commonly encountered when optical metrology techniques are utilized to evaluate film thicknesses. Such underlayer noise adversely impacts the accuracy of the thickness evaluation.

The surface of the atomic force microscopy (AFM) cantilever is defined by a main cantilever body and an island. The island is partly separated from the main body by a separating space between facing edges of the main body and the island. At least one bridge connects the island to the main body, along a line around which the island is able to rotate through torsion of the at least one bridge. The island has a probe tip located on the island at a position offset from said line and a reflection area. In an AFM a light source directs light to the reflection area and a light spot position detector detects a displacement of a light spot formed from light reflected by the reflection area, for measuring an effect of forces exerted on the probe tip.

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

A method and device for measuring dimension of a semiconductor structure are provided. A probe of an Atomic Force Microscope (AFM) is controlled at first to move a first distance from a preset reference position to a top surface of a semiconductor structure to be measured in a direction perpendicular to the top surface of the semiconductor structure to be measured, then the probe is controlled to scan the surface of the semiconductor structure to be measured while keeping the first distance in a direction parallel to the top surface of the semiconductor structure to be measured, amplitudes of the probe at respective scanning points on the surface of the semiconductor structure to be measured are detected, and a Critical Dimension (CD) of the semiconductor structure to be measured is determined according to the amplitudes of the probe at respective scanning points on the surface of the semiconductor structure.

The invention relates to a method for classifying a tissue sample obtained from mammary carcinoma. The method comprises determining a stiffness value for each of a plurality of points on said tissue sample, resulting in a stiffness distribution, and assigning said sample to a breast cancer subtype and nodal status based on said stiffness distribution.