A micro probe array device and method of manufacturing are disclosed. In the micro probe array device, a plurality of working electrodes are arranged in an array form, so that an individual electric signal can be applied to an object for each working electrode. In the micro probe array device, the height of the working electrode may be different, the working electrode and the counter electrode may constitute a double electrode, or the substrate may be made of a flexible material.

A micro probe array device and method of manufacturing are disclosed. In the micro probe array device, a plurality of working electrodes are arranged in an array form, so that an individual electric signal can be applied to an object for each working electrode. In the micro probe array device, the height of the working electrode may be different, the working electrode and the counter electrode may constitute a double electrode, or the substrate may be made of a flexible material.

Systems and methods for manufacturing multiple integrated tip probes for scanning probe microscopy. According to an embodiment is a microscope probe configured to analyze a sample, the microscope probe including: a movable probe tip including a terminal probe end; a first actuator configured to displace the movable probe tip along a first axis; and a detection component configured to detect motion of the movable probe tip in response to an applied signal; where the moveable probe tip comprises a metal layer affixed to a supporting layer, at least a portion of the metal layer at the terminal probe end extending past the supporting layer.

Systems and methods for manufacturing multiple integrated tip probes for scanning probe microscopy. According to an embodiment is a microscope probe configured to analyze a sample, the microscope probe including: a movable probe tip including a terminal probe end; a first actuator configured to displace the movable probe tip along a first axis; and a detection component configured to detect motion of the movable probe tip in response to an applied signal; where the moveable probe tip comprises a metal layer affixed to a supporting layer, at least a portion of the metal layer at the terminal probe end extending past the supporting layer.

Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

Provided is a composite metal-wide-bandgap semiconductor tip for scanning tunneling microscopy and/or scanning tunneling lithography, a method of forming, and a method for using the composite metal-wide-bandgap semiconductor tip.

The invention is directed to an arrangement for detecting the intensity distribution of components of the electromagnetic field in beams of radiation. The object of the invention is met, according to the invention, in that a high-resolution two-dimensional intensity sensor array and a field vector detector array comprising different regions with individual detector structures for two transverse and longitudinal field vector components E.sub.x, E.sub.y, E.sub.z are combined, wherein the detector structures are formed as nanostructures, metallic jacket-shaped tips with different apices, for utilization of localized plasmon resonance (LPR) of the individual detector structures and localized surface plasmons (LSP) excited through LPR for a polarization selection of the field distribution according to field vector components E.sub.x, E.sub.y, E.sub.z and transmission thereof to associated sensor elements by means of surface plasmon polaritons (SPP) and wave guiding (WGM).

The invention is directed to an arrangement for detecting the intensity distribution of components of the electromagnetic field in beams of radiation. The object of the invention is met, according to the invention, in that a high-resolution two-dimensional intensity sensor array and a field vector detector array comprising different regions with individual detector structures for two transverse and longitudinal field vector components E.sub.x, E.sub.y, E.sub.z are combined, wherein the detector structures are formed as nanostructures, metallic jacket-shaped tips with different apices, for utilization of localized plasmon resonance (LPR) of the individual detector structures and localized surface plasmons (LSP) excited through LPR for a polarization selection of the field distribution according to field vector components E.sub.x, E.sub.y, E.sub.z and transmission thereof to associated sensor elements by means of surface plasmon polaritons (SPP) and wave guiding (WGM).

A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.

A detector device is presented for use in a surface probing system. The detector device comprises an integral semiconductor structure configured to define a cantilever and tip probe assembly, comprising at least one tip formed on the cantilever, wherein an apex portion of said at least one tip is configured as an apertured photodetector comprising a layered structure formed with an aperture of subwavelength dimensions and defining at least one depletion region and an electrical circuit, said subwavelength aperture allowing collection of evanescent waves created at a surface region and interaction of collected evanescent waves with the at least one depletion region thereby causing direct conversion of the collected evanescent waves into electric signals being read by the electrical circuit within said tip apex portion, said integral semiconductor structure being thereby capable of concurrently monitoring topographic and optical properties of the surface being scanned by the tip.