An integrated circuit that can include a driver having a first driver output, and a first resistance coupled between a first node coupled to the first driver output and a second node. The first resistance can include a process resistor including a first material having a first temperature coefficient, and an interconnect resistor configured to provide at least 20% of the first resistance and including a second material having a second temperature coefficient which changes resistance in an opposite direction with temperature as compared to the first temperature coefficient. A first terminal of the interconnect resistor is directly connected to a first terminal of the process resistor.

Shielded probe systems are disclosed herein. The shielded probe systems are configured to test a device under test (DUT) and include an enclosure that defines an enclosure volume, a translation stage with a stage surface, a substrate-supporting stack extending from the stage surface, an electrically conductive shielding structure, an isolation structure, and a thermal shielding structure. The substrate-supporting stack includes an electrically conductive support surface and a temperature-controlled chuck. The electrically conductive shielding structure defines a shielded volume. The isolation structure electrically isolates the electrically conductive shielding structure from the enclosure and from the translation stage. The thermal shielding structure extends within the enclosure volume and at least partially between the enclosure and the substrate-supporting stack.

Shielded probe systems are disclosed herein. The shielded probe systems are configured to test a device under test (DUT) and include an enclosure that defines an enclosure volume, a translation stage with a stage surface, a substrate-supporting stack extending from the stage surface, an electrically conductive shielding structure, an isolation structure, and a thermal shielding structure. The substrate-supporting stack includes an electrically conductive support surface and a temperature-controlled chuck. The electrically conductive shielding structure defines a shielded volume. The isolation structure electrically isolates the electrically conductive shielding structure from the enclosure and from the translation stage. The thermal shielding structure extends within the enclosure volume and at least partially between the enclosure and the substrate-supporting stack.

An electronic test measurement system can include a device under test (DUT) and an electronic test instrument that includes a signal input configured to receive an electrical signal from the DUT, a cooling mechanism, and a processor. The processor can be configured to determine a frequency at which the cooling mechanism should operate, cause the cooling mechanism to operate at the determined frequency, select a filter based on the determined frequency, and apply the filter to the electrical signal to reduce interference with the electrical signal resulting from mechanical vibrations of the cooling mechanism.

An electronic test measurement system can include a device under test (DUT) and an electronic test instrument that includes a signal input configured to receive an electrical signal from the DUT, a cooling mechanism, and a processor. The processor can be configured to determine a frequency at which the cooling mechanism should operate, cause the cooling mechanism to operate at the determined frequency, select a filter based on the determined frequency, and apply the filter to the electrical signal to reduce interference with the electrical signal resulting from mechanical vibrations of the cooling mechanism.

An example test system includes a test head and a probe card assembly connected to the test head. The probe card assembly includes: a probe card having electrical contacts, a stiffener connected to the probe card to impart rigidity to the probe card, and a heater to heat to at least part of the probe card assembly. A prober is configured to move a device under test (DUT) into contact with the electrical contacts of the probe card assembly.

An alternating current loss measuring apparatus for superconductors includes a superconductor specimen, a magnetic field applying coil, a radiation shield, a vacuum vessel, first cooling means, and second cooling means. The first cooling means or the second cooling means is provided with a temperature regulating mechanism. The magnetic field applying means and the radiation shield are set to be a first cooling part, whereas the superconductor specimen is set to be a second cooling part, and the first cooling part and the second cooling part are cooled by first and second cooling means, respectively. A high thermal resistance member is disposed between the superconductor specimen and the second cooling means, and temperature measuring means are disposed at at least two positions on the high thermal resistance member. The alternating current loss of a superconductor under an external magnetic field can be measured at each of different temperatures.

A plurality of resistors are disclosed herein. The resistor may include one or more resistive elements and a plurality of conductive portions. Openings or slots, which can be configured to adjust temperature coefficient or resistance (TCR) values of the resistor, are formed in the resistive elements. The shape, quantity, and orientation of the openings or slots can vary. In one aspect, header assemblies are provided for securing or holding pins relative to the resistors.

A method of determining a high voltage value without measuring the high voltage value directly, in varying possible temperatures. An apparatus includes two voltage divider circuits (108, 110; 109, 111), wherein the second circuit (i.e. a reference circuit 109, 111) is provided with a smaller reference input voltage (102). The transfer ratio can be obtained from the reference circuit (109, 111) through voltage measurements, and deduced into a transfer ratio of another circuit (108, 110), no matter the ambient temperature value. When measuring a divided voltage value (103) of one circuit (108, 110), the desired high voltage value (101) can be calculated, no matter what the ambient temperature is.

A temperature compensation method for a SAR sensor (3) of a terminal, and a terminal are disclosed. The terminal comprises: a temperature sensing unit (1), a processor (2), and an SAR sensor (3); the temperature sensing unit (1) is configured to send a first trigger signal to the processor (2) in response to detecting that a temperature change amount of the SAR sensor (3) exceeds a preset value; the processor (2) is configured to send a first temperature control signal to the SAR sensor (3) upon receiving the first trigger signal; and the SAR sensor (3) is configured to activate a second-order temperature compensation of the SAR sensor (3) according to the first temperature control signal, and the second-order temperature compensation compensates for baseline data of the SAR sensor (3) together with a first-order temperature compensation of the SAR sensor (3). Therefore, real-time tracking of the temperature change amount by the baseline data of the SAR sensor (3) can be ensured, and the problem in the terminal of false trigger of the SAR sensor (3) caused by drastic temperature change can be avoided.