A sensor includes a passage in a shield with a clear width of 25.2 to 32 mm, which provides a higher sensitivity to electrical differential current, and more particularly for determining the universal-current sensitive determination of an electric differential current. The sensor can be a part of a circuit breaker, a charging cable and a charging station.

An electric circuit arrangement and a measuring method for a galvanically insulated, AC/DC sensitive differential current measurement having a high resolution having: a toroid current transformer having at least one secondary winding for detecting a differential current; a driver circuit for powering the secondary winding; a first oscillator circuit for controlling the driver circuit and for generating a time-modulated binary oscillator signal having dwell times in a state 1 and a state 2; a second oscillator circuit for determining the corresponding dwell time in the states 1 and 2 in high resolution by means of a clock signal having a clock rate independent of the oscillator signal; an evaluation device for evaluating the dwell time; and a data interface for outputting a differential-current measuring value; the driver circuit and the second oscillator circuit each being realized as structurally individual, integrated circuits.

An electric circuit arrangement and a measuring method for a galvanically insulated, AC/DC sensitive differential current measurement having a high resolution having: a toroid current transformer having at least one secondary winding for detecting a differential current; a driver circuit for powering the secondary winding; a first oscillator circuit for controlling the driver circuit and for generating a time-modulated binary oscillator signal having dwell times in a state 1 and a state 2; a second oscillator circuit for determining the corresponding dwell time in the states 1 and 2 in high resolution by means of a clock signal having a clock rate independent of the oscillator signal; an evaluation device for evaluating the dwell time; and a data interface for outputting a differential-current measuring value; the driver circuit and the second oscillator circuit each being realized as structurally individual, integrated circuits.

A power connector is provided that is configured to conduct a current. The power connector includes a base structure, an extension structure, and a connector head structure that define a current path for the current. The base structure is coupled to an output node of a primary conductor and receives the current from the primary conductor. The connector head structure is configured to output the current from the power connector to the load. The extension structure is coupled to and extends between the base structure and the connector head structure. The extension structure includes a current constriction region configured to increase a magnetic flux density of a magnetic field produced by the current flowing through the current constriction region at a position of a magnetic current sensor that generates a sensor signal based on the magnetic field magnetic field produced by the current flowing through the current constriction region.

A power connector is provided that is configured to conduct a current. The power connector includes a base structure, an extension structure, and a connector head structure that define a current path for the current. The base structure is coupled to an output node of a primary conductor and receives the current from the primary conductor. The connector head structure is configured to output the current from the power connector to the load. The extension structure is coupled to and extends between the base structure and the connector head structure. The extension structure includes a current constriction region configured to increase a magnetic flux density of a magnetic field produced by the current flowing through the current constriction region at a position of a magnetic current sensor that generates a sensor signal based on the magnetic field magnetic field produced by the current flowing through the current constriction region.

The present disclosure provides a method of analyzing a semiconductor device. The method includes providing a first transistor, a second transistor disposed adjacent to the first transistor, and a gate electrode common to the first transistor and the second transistor; connecting a power-supply voltage (V.sub.dd) to the gate electrode to turn on the first transistor, determining a first threshold voltage (V.sub.th) based on the power-supply voltage; switching the power-supply voltage to a ground voltage (V.sub.ss); connecting the ground voltage to the gate electrode to turn on the second transistor; and determining a second threshold voltage based on the ground voltage.

The present disclosure provides a method of analyzing a semiconductor device. The method includes providing a first transistor, a second transistor disposed adjacent to the first transistor, and a gate electrode common to the first transistor and the second transistor; connecting a power-supply voltage (V.sub.dd) to the gate electrode to turn on the first transistor, determining a first threshold voltage (V.sub.th) based on the power-supply voltage; switching the power-supply voltage to a ground voltage (V.sub.ss); connecting the ground voltage to the gate electrode to turn on the second transistor; and determining a second threshold voltage based on the ground voltage.

A semiconductor device includes m power transistors (m is an integer of 2 or more) coupled in parallel each of which has a sense source terminal, a Kelvin terminal and a source terminal, a first average circuit that connects the first resistor and the second resistor in order between the sense source terminal and the Kelvin terminal and generates first to fourth average voltages and an arithmetic circuit that measures a first current value flowing through the sense source terminal from the first and second average voltages, measures a second current value flowing through the sense source terminal from the third and fourth average voltages and measures a current value flowing through the source terminal from the first to fourth average voltages and the first and second current values.

A semiconductor device includes m power transistors (m is an integer of 2 or more) coupled in parallel each of which has a sense source terminal, a Kelvin terminal and a source terminal, a first average circuit that connects the first resistor and the second resistor in order between the sense source terminal and the Kelvin terminal and generates first to fourth average voltages and an arithmetic circuit that measures a first current value flowing through the sense source terminal from the first and second average voltages, measures a second current value flowing through the sense source terminal from the third and fourth average voltages and measures a current value flowing through the source terminal from the first to fourth average voltages and the first and second current values.

An electronic integrated multi-electrode detection system of a potential determination includes a multi-electrode array, a circuit unit and a total signal output and acquisition unit. The circuit unit includes a multi-electrode array signal input end, a high input impedance voltage follower, a phase shifting filter circuit, an extension module input end, a summing circuit and a total output signal end. The detection system promotes the detection sensitivity and increase the accuracy and precision of detection results. The detection system can be used for monitoring the change in trace ion concentration in a sample, analyzing a constant conventional sample and analyzing a sample with higher error requirement. The detection system can be widely applied to various analysis detection fields, including life sciences, environmental sciences, medicine clinics, and the like.