A method for manufacturing a Hall sensor, an insulation layer being initially applied to a wafer including an ASIC or integrated into the wafer, a Hall layer, for example, made of InSb or another III-V semiconductor material, being situated thereon, and this Hall layer being at least sectionally recrystallized with the aid of a laser. The insulation layer may be porous or may include a cavity or reflective layer for thermal protection of the ASIC.

A method of manufacturing electromagnet coils for use in a magnetic resonance imaging (MRI) system is provided. The electromagnet coils are located in a non-homogeneous external magnetic field. The method comprises forming a coil representation of a coil surface for the electromagnet coils; setting limits for performance metrics for the electromagnet coils including a magnetic field-shape metric and at least one of an external torque metric and an external force metric, the external torque metric and the external force metric based, respectively, at least in part on a torque and a force exerted on the electromagnet coil by the non-homogeneous external magnetic field; forming a performance functional, based on the coil representation and the performance metrics, for generating a current density pattern over the coil surface; optimizing the performance functional and generating a current density pattern based on the optimized performance functional; and obtaining coil windings.

Magnetic field detectors include a proof mass suspended by deformable arms similar to a three dimensional accelerometer. The magnetic field detectors further include magnetically sensitive material present on the proof mass and/or deformable arms to cause movement of the proof mass and/or deformable arms when in the presence of a magnetic field. This movement is converted to an electrical signal and that electrical signal is compared to a reference to determine if a magnetic field of interest is present. The magnetic field detector may be included within an implantable medical device, and when the magnetic field detector indicates that a magnetic field of an MRI scanner is present, the implantable medical device may switch to an MRI mode of operation. The device may also switch back to a normal mode of operation once the MRI scanner is no longer detected such as after a predefined amount of time.

Aspects of the present disclosure generally relate to a spintronic device for use in a magnetic media drive, a magnetoresistive random access memory device, a magnetic sensor, or a magnetic recording write head. The spintronic device comprises a multilayer structure having a negative anisotropic field and a negative spin polarization. The multilayer structure comprises a plurality of layers, each layer of the plurality of layers comprising a first sublayer comprising Fe and a second sublayer comprising Co. At least one of the first sublayer and the second sublayer comprises one or more of Cr, V, and Ti. The first and second sublayers are alternating. The negative anisotropic field of the multilayer structure is between about −0.5 T to about −0.8 T, and an effective magnetization of the multilayer structure is between about 2.4 T to about 2.8 T.

A magnetic property measuring system includes a stage configured to hold a sample and a magnetic structure disposed over the stage. The stage includes a body part, a magnetic part adjacent the body part, and a plurality of holes defined in the body part. The magnetic part of the stage and the magnetic structure are configured to apply a magnetic field, which is perpendicular to one surface of the sample, to the sample. The stage is configured to move horizontally in an x-direction and a y-direction which are parallel to the one surface of the sample.

A magnetic field sensor includes first and second sensors for detecting first and second magnetic components according to first and second directions. Each sensor includes a flux concentrator including first and second magnetic parts, an air gap between the parts, and a magnetoresistive element in the air gap. Each magnetoresistive element includes a reference layer having a fixed magnetization direction, the fixed magnetization direction of the first and second sensors being substantially identical, and a sensitive layer having a variable magnetization direction, the variable magnetization direction of the first sensor when the first sensor is in a state of rest being substantially identical to the variable magnetization direction of the second sensor when the second sensor is in the state of rest. The air gaps of first and second sensor are oriented parallel to a direction XY which is, at ±15°, the bisector of the first and second directions.

A semiconductor process integrates three bridge circuits, each include magnetoresistive sensors coupled as a Wheatstone bridge on a single chip to sense a magnetic field in three orthogonal directions. The process includes various deposition and etch steps forming the magnetoresistive sensors and a plurality of flux guides on one of the three bridge circuits for transferring a “Z” axis magnetic field onto sensors orientated in the XY plane.

A sensor includes a lead frame having a first surface, a second opposing surface, and a plurality of leads and a semiconductor die having a first surface attached to the first surface of the lead frame and a second, opposing surface. The sensor further includes a non-conductive mold material enclosing the die and at least a portion of the lead frame, a conductive coil secured to the non-conductive mold material, a mold material secured to the non-conductive mold material and enclosing the conductive coil, wherein the mold material has a central region and an element disposed in the central region of the mold material.

A method of fabricating a semiconductor device includes aligning an alignment structure of a wafer to a direction of a magnetic field created by an external electromagnet and depositing a magnetic layer (e.g., NiFe) over the wafer in the presence of the magnetic field and while applying the magnetic field and maintaining a temperature of the wafer below 150° C. An insulation layer (e.g., AlN) is deposited on the first magnetic layer. The alignment structure of the wafer is again aligned to the direction of the magnetic field and a second magnetic layer is deposited on the insulation layer, in the presence of the magnetic field and while maintaining the temperature of the wafer below 150° C.

An integrated fluxgate device has a magnetic core on a control circuit. The magnetic core has a volume and internal structure sufficient to have low magnetic noise and low non-linearity. A stress control structure is disposed proximate to the magnetic core. An excitation winding, a sense winding and a compensation winding are disposed around the magnetic core. An excitation circuit disposed in the control circuit is coupled to the excitation winding, configured to provide current at high frequency to the excitation winding sufficient to generate a saturating magnetic field in the magnetic core during each cycle at the high frequency. An isolation structure is disposed between the magnetic core and the windings, sufficient to enable operation of the excitation winding and the sense winding at the high frequency at low power.